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公开(公告)号：US20240017989A1
公开(公告)日：2024-01-18
申请号：US18348664
申请日：2023-07-07
Applicant: ROHM CO., LTD.
Inventor： Martin Wilfried HELLER
CPC classification number: B81C1/00166 , B81B7/02 , B81B2201/0235 , B81B2203/0315 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/0177 , B81C2201/019 , B81C2201/0178
Abstract: A MEMS device includes a substrate which has a first main surface and a second main surface facing the first main surface, and in which a silicon substrate, a silicon carbide layer having conductivity, and a silicon layer are sequentially stacked from a second main surface side toward a first main surface side, a cavity recessed over the silicon layer, the silicon carbide layer, and the silicon substrate from the first main surface of the substrate to the second main surface side of the substrate, a MEMS electrode which is arranged in the cavity, is composed of the silicon layer and the silicon carbide layer, and is spaced apart from a bottom surface of the cavity to the first main surface side, and an isolation joint which divides the MEMS electrode in a plan view and mechanically connects and electrically isolates both sides of the divided MEMS electrode.
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公开(公告)号：US20230348259A1
公开(公告)日：2023-11-02
申请号：US17732467
申请日：2022-04-28
Inventor： WAI MUN CHONG , RAKESH CHAND , GUOFU ZHOU , ROHIT PULIKKAL KIZHAKKEYIL , RAMACHANDRAMURTHY PRADEEP YELEHANKA
CPC classification number: B81B3/0051 , B81C1/00341 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2207/012 , B81C2201/0132 , B81C2201/0178 , B81C2203/0792
Abstract: A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity, a stopper, a MEMS structure, and a bonding dielectric layer. The cavity is located at a top surface of the supporting substrate. The stopper is adjacent to the cavity, where a top surface of the stopper and the top surface of the supporting substrate are on the same level in a height. The MEMS structure is disposed on the supporting substrate, where the MEMS structure includes a proof mass and a suspension beam. The proof mass is disposed directly above the stopper, and the suspension beam is disposed directly above the cavity. The bonding dielectric layer is disposed between the top surface of the supporting substrate and a bottom surface of the MEMS structure.
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公开(公告)号：US20190233280A1
公开(公告)日：2019-08-01
申请号：US16213019
申请日：2018-12-07
Applicant: Shenyang Silicon Technology Co., Ltd.
Inventor： Xiang LI
CPC classification number: B81C1/00047 , B08B3/08 , B32B37/06 , B32B38/0008 , B32B43/006 , B32B2038/0016 , B32B2310/14 , B32B2313/00 , B32B2457/14 , B81B1/004 , B81B2203/0315 , B81B2203/0353 , B81C1/00087 , B81C1/00357 , B81C1/00507 , B81C1/00849 , B81C2201/0116 , B81C2201/0125 , B81C2201/0178 , B81C2201/019 , B81C2201/0192 , B81C2201/0194
Abstract: A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.
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44.发明授权公开(公告)号：US09656860B2
公开(公告)日：2017-05-23
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
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45.发明申请USE OF METAL NATIVE OXIDE TO CONTROL STRESS GRADIENT AND BENDING MOMENT OF A RELEASED MEMS STRUCTURE 审中-公开使用金属氧化物来控制应力梯度和微型结构的弯曲变形公开(公告)号：US20160368765A1
公开(公告)日：2016-12-22
申请号：US15254828
申请日：2016-09-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Earl Vedere Atnip , Raul Enrique Barreto , Kelly J. Taylor
CPC classification number: B81C1/00666 , B81B3/0072 , B81B2203/0109 , B81B2203/0118 , B81C1/00365 , B81C2201/0108 , B81C2201/0132 , B81C2201/0167 , B81C2201/0178
Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract translation: 在所描述的示例中，通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。
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Patent Agency Ranking
公开(公告)号：US08716050B2
公开(公告)日：2014-05-06
申请号：US13721496
申请日：2012-12-20
CPC classification number: H01L21/461 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00828 , B01J2219/00837 , B01J2219/0086 , B01L3/502707 , B01L2300/0816 , B81B2201/058 , B81B2203/0338 , B81C1/00071 , B81C2201/0116 , B81C2201/0178 , H01L29/16
Abstract: Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.
Abstract translation: 这里描述的是形成在硅衬底的表面下方并平行于其的表面的微通道。 利用硅迁移技术形成埋在硅衬底表面下方的微通道。 蚀刻打开微通道的至少一端。 通过微通道的开口端利用氧化，以促进微通道的受控直径。
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公开(公告)号：US20130029157A1
公开(公告)日：2013-01-31
申请号：US13386049
申请日：2010-07-20
Applicant: Nakis Karapatis
Inventor： Nakis Karapatis
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
Abstract: A method of fabricating a reinforced silicon micromechanical part includes: micromachining the part, or a batch of parts in a silicon wafer; forming a silicon dioxide layer over the entire surface of the part, in one or plural operations, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the silicon dioxide layer by etching.
Abstract translation: 制造增强硅微机械部件的方法包括：在硅晶片中微加工所述部件或一批部件; 在一个或多个操作中在整个表面上形成二氧化硅层，以获得比天然二氧化硅的厚度大至少五倍的二氧化硅的厚度; 并通过蚀刻去除二氧化硅层。
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公开(公告)号：US08057882B2
公开(公告)日：2011-11-15
申请号：US12225670
申请日：2007-03-28
Applicant: Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
Inventor： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。
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公开(公告)号：US20110001582A1
公开(公告)日：2011-01-06
申请号：US12918222
申请日：2009-02-09
Applicant: Hironori Nagasaki
Inventor： Hironori Nagasaki
CPC classification number: H03H3/0072 , B81B2201/0271 , B81B2203/0118 , B81B2203/033 , B81B2203/04 , B81C1/00182 , B81C2201/0178 , H01G5/16 , H03H9/2463 , H03H2009/02496 , Y10T29/49002
Abstract: A micro-electromechanical device of the present invention includes a resonator and an electrode facing each other, a pair of thermal oxide film formed on the surfaces of the resonator and electrode facing each other and a narrow gap provided between the thermal oxide films. A process for fabricating a micro-electromechanical device includes a step of processing an Si layer to be the resonator and the electrode by using photolithography and etching to form a groove to be a gap, and a step of performing thermal oxidation on the Si layer to form a pair of thermal oxide films of Si on the opposite surfaces of the groove.
Abstract translation: 本发明的微电子机电装置包括谐振器和彼此面对的电极，形成在谐振器和彼此面对的电极的表面上的一对热氧化膜以及设置在热氧化膜之间的窄间隙。 微机电器件的制造方法包括以下步骤：通过使用光刻法和蚀刻法形成作为间隙的沟槽来处理作为谐振器的Si层和电极，以及在Si层上进行热氧化的步骤 在槽的相对表面上形成一对Si的热氧化膜。
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公开(公告)号：US07833405B2
公开(公告)日：2010-11-16
申请号：US10450362
申请日：2001-12-13
Applicant: Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
Inventor： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaeffer
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.
Abstract translation: 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。
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