公开(公告)号：US20130270660A1

公开(公告)日：2013-10-17

申请号：US13821589

申请日：2011-09-18

Applicant: Janusz Bryzek ,  John Gardner Bloomsburgh ,  Cenk Acar

Inventor： Janusz Bryzek ,  John Gardner Bloomsburgh ,  Cenk Acar

IPC: H01L29/84

CPC classification number: B81B3/0021 ,  B81B3/0072 ,  B81B7/0016 ,  B81B7/0051 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/0785 ,  H01L29/84 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: One example includes an integrated circuit including at least one electrical interconnects disposed on an elongate are extending away from a main portion of the integrated circuit and a microelectromechanical layer including an oscillating portion, the microelectromechanical layer coupled to the main portion of the integrated circuit, wherein the microelectromechanical layer includes a cap comprising a membrane that extends to the integrated circuit.

Abstract translation: 一个实例包括集成电路，其包括设置在细长上的至少一个电互连，远离集成电路的主要部分延伸，以及包括振荡部分的微机电层，微机电层耦合到集成电路的主要部分，其中 微电子机械层包括一个包括一个延伸到集成电路的膜的盖子。

公开(公告)号：US20130221510A1

公开(公告)日：2013-08-29

申请号：US13775890

申请日：2013-02-25

Applicant: CORNING INCORPORATED

Inventor： James Gregory Couillard ,  Christopher Paul Daigler ,  Jiangwei Feng ,  Yawei Sun ,  Lili Tian ,  Ian David Tracy

IPC: H01L21/82 ,  H01L23/15

CPC classification number: H01L21/82 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/032 ,  B81C2203/035 ,  G02B26/0833 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus provide for a structure, including: a first glass material layer; and a second material layer bonded to the first glass material layer via bonding material, where the bonding material is formed from one of glass frit material, ceramic frit material, glass ceramic frit material, and metal paste, which has been melted and cured.

Abstract translation: 方法和装置提供一种结构，包括：第一玻璃材料层; 以及通过接合材料接合到第一玻璃材料层的第二材料层，其中粘合材料由熔化和固化的玻璃料材料，陶瓷玻璃料，玻璃陶瓷玻璃料材料和金属糊料之一形成。

公开(公告)号：US20130207281A1

公开(公告)日：2013-08-15

申请号：US13764244

申请日：2013-02-11

Applicant: Commissariat A L'Energie Atomique Et Aux Ene Alt

Inventor： Xavier BAILLIN ,  Jean-Louis Pornin

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B7/0038 ,  B81C1/00357 ,  B81C2201/0108 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/2007

Abstract: Microelectronic substrate comprising at least: a support layer, a top layer comprising at least one semiconductor, a layer comprising at least one organic material able to be etched selectively with respect to the semiconductor of the top layer by using a dry etching, and disposed between the support layer and the top layer, and also comprising one or more portions of dielectric material the hardness of which is greater than that of the organic material, disposed in the layer of organic material, and the thickness of which is substantially equal to that of the layer of organic material.

Abstract translation: 微电子衬底包括至少包括：支撑层，包括至少一个半导体的顶层，包含至少一种有机材料的层，所述至少一种有机材料可以通过使用干蚀刻相对于顶层的半导体选择性地被蚀刻，并且设置在 支撑层和顶层，并且还包括设置在有机材料层中的硬度大于有机材料的硬度的介电材料的一个或多个部分，其厚度基本上等于 有机材料层。

公开(公告)号：US20130200439A1

公开(公告)日：2013-08-08

申请号：US13521168

申请日：2011-01-10

Applicant: Michael Doelle

Inventor： Michael Doelle

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract translation: 微机电半导体元件设置有半导体衬底，由半导体材料制成的可逆变形的弯曲元件以及对机械应力敏感的至少一个晶体管。 晶体管被设计为弯曲元件中的集成元件。

公开(公告)号：US08446021B2

公开(公告)日：2013-05-21

申请号：US12679636

申请日：2008-07-28

Applicant: Christian Maeurer ,  Johanna May

Inventor： Christian Maeurer ,  Johanna May

IPC: H01L23/31

CPC classification number: B81C1/0023 ,  B01L3/502707 ,  B01L2300/0645 ,  B01L2400/0415 ,  B81B2201/058 ,  B81C3/008 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A microfluidic component having at least one first polymer layer, which is provided with a microstructure for at least one fluid, and having at least one second polymer layer. It is provided that at least one semiconductor component is situated on the first and/or the second polymer layer. Furthermore, a manufacturing method for such a microfluidic component is described.

Abstract translation: 具有至少一个第一聚合物层的微流体组分，其具有用于至少一种流体的微结构并且具有至少一个第二聚合物层。 提供了至少一个半导体部件位于第一和/或第二聚合物层上。 此外，描述了这种微流体组分的制造方法。

公开(公告)号：US20130089955A1

公开(公告)日：2013-04-11

申请号：US13645717

申请日：2012-10-05

Applicant: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

Inventor： Xavier Baillin ,  Jean-Louis Pornin

IPC: H01L21/56

CPC classification number: B81C1/00285 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Process for encapsulating a micro-device in a cavity formed between one first and one second substrate, comprising at least the steps of: producing the micro-device in and/or on the first substrate, attaching and securing the second substrate to the first substrate, forming the cavity in which the micro-device is placed, producing at least one hole through one of the two substrates, called the drilled substrate, and leading into the cavity opposite a portion of the other of the two substrates, called the receiving substrate, depositing at least one getter material portion on said portion of the receiving substrate through the hole, hermetically sealing the cavity by closing the hole.

Abstract translation: 将微器件封装在形成在一个第一和一个第二衬底之间的空腔中的方法，至少包括以下步骤：在第一衬底内和/或第一衬底上产生微器件，将第二衬底附接并固定到第一衬底 ，形成微型器件放置在其中的空腔，通过称为所钻出的衬底的两个衬底之一产生至少一个孔，并且引导到两个衬底中被称为接收衬底的另一个衬底的一部分 ，通过该孔将至少一个吸气材料部分沉积在所述接收衬底的所述部分上，通过关闭所述孔气密地密封所述空腔。

公开(公告)号：US20130087865A1

公开(公告)日：2013-04-11

申请号：US13521158

申请日：2011-01-10

Applicant: Arnd Ten Have

Inventor： Arnd Ten Have

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Abstract translation: 微机电半导体部件设置有半导体基板，其中形成有由侧壁和顶壁和底壁限定的空腔。 为了形成与半导体衬底的区域的柔性连接，顶壁或底壁在空腔周围设置有沟槽，并且在所述沟槽之间形成弯曲腹板。 在至少一个所述弯曲腹板内形成至少一个对机械应力敏感的测量元件。 在由沟槽围绕的中心区域内，顶壁或底壁包括减少中心区域的质量的多个凹陷和分开凹陷的多个加强支架。

公开(公告)号：US08404568B2

公开(公告)日：2013-03-26

申请号：US12163277

申请日：2008-06-27

Applicant: Michael Foster ,  Shifang Zhou

Inventor： Michael Foster ,  Shifang Zhou

IPC: H01L21/326

CPC classification number: B81C3/001 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038

Abstract: System and methods offset mechanism elements during fabrication of Micro-Electro-Mechanical Systems (MEMS) devices. An exemplary embodiment applies a voltage across an offset mechanism element and a bonding layer of a MEMS device to generate an electrostatic charge between the offset mechanism element and the bonding layer, wherein the electrostatic charge draws the offset mechanism element to the bonding layer. The offset mechanism element and the bonding layer are then bonded.

Abstract translation: 微机电系统（MEMS）器件制造过程中的系统和方法偏移机制元件。 示例性实施例施加电压跨越MEMS装置的偏移机构元件和结合层，以在偏置机构元件和结合层之间产生静电荷，其中静电电荷将偏移机构元件拉到粘合层。 然后粘合偏移机构元件和粘合层。

公开(公告)号：US20120328834A1

公开(公告)日：2012-12-27

申请号：US13360261

申请日：2012-01-27

Applicant: Marc A. Unger ,  Hou-Pu Chou ,  Todd A. Thorsen ,  Axel Scherer ,  Stephen R. Quake

Inventor： Marc A. Unger ,  Hou-Pu Chou ,  Todd A. Thorsen ,  Axel Scherer ,  Stephen R. Quake

IPC: B32B3/00

CPC classification number: B29C51/00 ,  B01L3/502707 ,  B01L3/50273 ,  B01L3/502738 ,  B01L2300/0861 ,  B01L2300/0887 ,  B01L2300/123 ,  B01L2400/046 ,  B01L2400/0481 ,  B01L2400/0655 ,  B33Y80/00 ,  B81B5/00 ,  B81B2201/036 ,  B81B2201/054 ,  B81C1/00119 ,  B81C2201/019 ,  B81C2201/034 ,  C12Q1/6874 ,  F04B43/043 ,  F15C1/06 ,  F15C5/00 ,  F16K11/20 ,  F16K13/00 ,  F16K31/126 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0046 ,  F16K99/0048 ,  F16K99/0051 ,  F16K99/0059 ,  F16K2099/0074 ,  F16K2099/0076 ,  F16K2099/0078 ,  F16K2099/008 ,  F16K2099/0094 ,  Y10T137/0491 ,  Y10T137/0497 ,  Y10T137/2224 ,  Y10T137/87249 ,  Y10T156/10 ,  Y10T428/24479 ,  Y10T428/24744 ,  C12Q2535/125

Abstract: A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer; bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate.

公开(公告)号：US08276449B2

公开(公告)日：2012-10-02

申请号：US12585553

申请日：2009-09-17

Applicant: Goro Nakatani

Inventor： Goro Nakatani

IPC: G01P15/12 ,  G01P15/00

CPC classification number: G01P15/18 ,  B81B2201/0235 ,  B81C3/004 ,  B81C2201/019 ,  B81C2203/051 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0842

Abstract: The acceleration sensor according to the present invention includes a sensor chip having a movable portion operating in response to a change in a physical quantity and a silicon chip arranged to be opposed to a first side of the sensor chip and bonded to the sensor chip, while the sensor chip is provided with a penetrating portion penetrating the sensor chip in the thickness direction so that the first side is visually recognizable from a second side of the sensor chip, and the silicon chip is provided with an alignment mark on a portion opposed to the penetrating portion.

Abstract translation: 根据本发明的加速度传感器包括传感器芯片，其具有响应于物理量的变化而起作用的可移动部分和布置成与传感器芯片的第一侧相对并结合到传感器芯片的硅芯片，同时 传感器芯片在厚度方向上设有穿透传感器芯片的穿透部分，从而可以从传感器芯片的第二侧视觉上识别第一侧，并且硅芯片在与该传感器芯片相对的部分上设置有对准标记 穿透部分。