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公开(公告)号：US20140322894A1
公开(公告)日：2014-10-30
申请号：US14330210
申请日：2014-07-14
Inventor： Kuei-Sung Chang , Yi Heng Tsai
IPC: B81C1/00
CPC classification number: B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
Abstract: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
Abstract translation: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。
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42.发明申请公开(公告)号：US20140072152A1
公开(公告)日：2014-03-13
申请号：US14085307
申请日：2013-11-20
Applicant: Invensense, Inc.
Inventor： Kuang L. Yang , Li Chen , Thomas D. Chen
IPC: H04R19/04
CPC classification number: H04R19/04 , B81B2201/0257 , B81C1/00182 , B81C2201/0194 , H04R19/005 , H04R2201/003 , Y10T29/43 , Y10T29/49002 , Y10T29/49005 , Y10T29/4908
Abstract: A dual backplate MEMS microphone system includes a flexible diaphragm sandwiched between two single-crystal silicon backplates. Such a MEMS microphone system may be formed by fabricating each backplate in a separate wafer, and then transferring one backplate from its wafer to the other wafer, to form two separate capacitors with the diaphragm.
Abstract translation: 双背板MEMS麦克风系统包括夹在两个单晶硅背板之间的柔性隔膜。 这样的MEMS麦克风系统可以通过在单独的晶片中制造每个背板，然后将一个背板从其晶片传送到另一个晶片来形成，以与隔膜形成两个单独的电容器。
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公开(公告)号：US20130052797A1
公开(公告)日：2013-02-28
申请号：US13214917
申请日：2011-08-22
Applicant: Kuei-Sung Chang , Yi Heng Tsai
Inventor： Kuei-Sung Chang , Yi Heng Tsai
IPC: H01L21/306
CPC classification number: B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
Abstract: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
Abstract translation: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。
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公开(公告)号：US20120279287A1
公开(公告)日：2012-11-08
申请号：US13101253
申请日：2011-05-05
Applicant: Paul S. Andry , Bing Dang , Steven L. Wright
Inventor： Paul S. Andry , Bing Dang , Steven L. Wright
CPC classification number: G01B5/28 , B81B2201/12 , B81C3/001 , B81C2201/0194 , G01Q40/02 , G01Q70/14 , G01Q70/16 , G01R1/067 , G01R1/06738 , G01R1/07378 , G01R3/00 , G03F7/00
Abstract: Transferable probe tips including a metallic probe, a delamination layer covering a portion of the metallic probe, and a bonding alloy, wherein the bonding alloy contacts the metallic probe at a portion of the probe that is not covered by the delamination layer are provided herein. Also, techniques for creating a transferable probe tip are provided, including etching a handler substrate to form one or more via arrays, depositing a delamination layer in each via array, depositing one or more metals in each via array to form a probe tip structure, and depositing a bonding alloy on a portion of the probe tip structure that is not covered by the delamination layer. Additionally, techniques for transferring transferable probe tips are provided, including removing a handler substrate from a probe tip structure, and transferring the probe tip structure via flip-chip joining the probe tip structure to a target probe head substrate.
Abstract translation: 本发明提供了包括金属探针，覆盖金属探针的一部分的分层和可接合的探针尖端，以及接合合金，其中接合合金在探针的未被分层的覆盖部分处接触金属探针。 此外，提供了用于产生可转移探针尖端的技术，包括蚀刻处理器衬底以形成一个或多个通孔阵列，在每个通孔阵列中沉积分层，在每个通孔阵列中沉积一个或多个金属以形成探针尖端结构， 以及在未被分层层覆盖的探针尖端结构的一部分上沉积接合合金。 此外，提供了用于传送可转移的探针尖端的技术，包括从探针尖端结构去除处理器基底，以及通过将探针尖端结构连接到目标探针头基底的倒装芯片来传送探针尖端结构。
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45.发明申请FIBROUS NETWORKS AND A METHOD AND APPARATUS FOR CONTINUOUS OR BATCH FIBROUS NETWORK PRODUCTION 有权纤维网络和连续或批量网络生产的方法和装置公开(公告)号：US20110212308A1
公开(公告)日：2011-09-01
申请号：US12999829
申请日：2009-06-23
Applicant: David P Brown , Andrei Ollikainen , Esko I. Kauppinen , Albert G. Nasibulin , Jussi Heikkonen
Inventor： David P Brown , Andrei Ollikainen , Esko I. Kauppinen , Albert G. Nasibulin , Jussi Heikkonen
CPC classification number: B81C1/00357 , B81C1/00373 , B81C1/00476 , B81C1/00492 , B81C2201/0187 , B81C2201/0188 , B81C2201/0194 , C01B32/15 , C01B32/168 , C01P2004/13 , C01P2004/16 , C04B14/026 , C04B30/02 , C04B2111/00844 , C04B2111/00853 , Y10T428/24802
Abstract: A method for the production of a fibrous network-substrate component includes the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).
Abstract translation: 制造纤维网状基材成分的方法包括以下步骤：通过从气流中过滤高纵横比分子结构（HARM-结构），在预备基材（2）上提供纤维材料网（1），将 在初级衬底（2）上靠近次级衬底（3）的纤维材料（1）的网络，向纤维材料（1）的网络施加力以优选地将纤维材料（1）的网络从初步 为了将纤维材料（1）的网络从预备衬底（2）传送到第二衬底（3），将衬底（2）连接到第二衬底（3），并从初始衬底（2）的网络 纤维材料（1）。
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Patent Agency Ranking
公开(公告)号：US20240109769A1
公开(公告)日：2024-04-04
申请号：US18538503
申请日：2023-12-13
Applicant: Xintec Inc.
Inventor： Wei-Luen SUEN , Jiun-Yen LAI , Hsing-Lung SHEN , Tsang-Yu LIU
CPC classification number: B81B7/0067 , B81C1/00317 , B81B2203/0353 , B81C2201/0125 , B81C2201/0132 , B81C2201/0194
Abstract: A chip package includes a semiconductor substrate and a metal layer. The semiconductor substrate has an opening and a sidewall surrounding the opening, in which an upper portion of the sidewall is a concave surface. The semiconductor substrate is made of a material including silicon. The metal layer is located on the semiconductor substrate. The metal layer has plural through holes above the opening to define a MEMS (Microelectromechanical system) structure, in which the metal layer is made of a material including aluminum.
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公开(公告)号：US11944998B2
公开(公告)日：2024-04-02
申请号：US16822018
申请日：2020-03-18
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor： Byung Chul Lee , Dong-Hyun Kang , Jin soo Park , Tae Song Kim
CPC classification number: B06B1/0292 , B81B3/0086 , B81C1/00698 , B81B2201/0271 , B81B2203/0127 , B81B2207/07 , B81C2201/0171 , B81C2201/0178 , B81C2201/0194
Abstract: A method of fabricating a capacitive micromachined ultrasonic transducer (CMUT) according to one aspect of the present invention may include forming, on a semiconductor substrate, a first region implanted with impurity ions at a first average concentration and a second region implanted with no impurity ions or implanted with the impurity ions at a second average concentration lower than the first average concentration, forming an insulating layer by oxidizing the semiconductor substrate wherein the insulating layer includes a first oxide layer having a first thickness on at least a part of the first region and a second oxide layer having a second thickness smaller than the first thickness on at least a part of the second region, and forming a membrane layer on the insulating layer such that a gap is defined between the second oxide layer and the membrane layer.
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48.发明公开公开(公告)号：US20240010491A1
公开(公告)日：2024-01-11
申请号：US18348607
申请日：2023-07-07
Inventor： Bruno Ghyselen , Thierry Salvetat , Guillaume Berre , François Rieutord
IPC: B81C1/00 , H01L21/762
CPC classification number: B81C1/00182 , H01L21/76254 , B81C1/00047 , B81C2201/0194
Abstract: A method for manufacturing a structure comprising membranes overhanging cavities, comprises:
a) forming cavities opening at a front face of a support substrate, the cavities having a depth and an area, and being spaced apart by a spacing;
b) assembling, by way of direct bonding, a donor substrate on the support substrate to seal the cavities under vacuum, the direct bonding being hydrophilic and involving a given number of water monolayers at a contact interface between the substrates; and
c) transferring a thin layer from the donor substrate onto the support substrate, the thin layer comprising the membranes.
A specific area is defined around each cavity in the plane of the contact interface and is expressed as a function of half of the spacing. The area, the depth of each cavity, and the specific area are defined in step a) to satisfy a particular relationship.-
49.发明公开公开(公告)号：US20230166965A1
公开(公告)日：2023-06-01
申请号：US17990902
申请日：2022-11-21
Inventor： Seok KIM , Jun Kyu PARK
IPC: B81C1/00
CPC classification number: B81C1/00158 , B81C2201/0133 , B81C2201/0194
Abstract: A method of liquid-mediated pattern transfer includes providing a substrate comprising (a) a semiconductor film adhered to the substrate and (b) a first patterned layer on the semiconductor film. The substrate is submerged in a delamination liquid, whereby the semiconductor film is delaminated from the substrate while the first patterned layer remains on the semiconductor film. A patterned semiconductor membrane ready for transfer is thus obtained. The patterned semiconductor membrane is transferred to a target substrate in a transfer liquid, and then the transfer liquid is removed (e.g., evaporated). The patterned semiconductor membrane adheres to the target substrate as the transfer liquid is removed.
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公开(公告)号：US20190233280A1
公开(公告)日：2019-08-01
申请号：US16213019
申请日：2018-12-07
Applicant: Shenyang Silicon Technology Co., Ltd.
Inventor： Xiang LI
CPC classification number: B81C1/00047 , B08B3/08 , B32B37/06 , B32B38/0008 , B32B43/006 , B32B2038/0016 , B32B2310/14 , B32B2313/00 , B32B2457/14 , B81B1/004 , B81B2203/0315 , B81B2203/0353 , B81C1/00087 , B81C1/00357 , B81C1/00507 , B81C1/00849 , B81C2201/0116 , B81C2201/0125 , B81C2201/0178 , B81C2201/019 , B81C2201/0192 , B81C2201/0194
Abstract: A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.
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