公开(公告)号：US08486512B2

公开(公告)日：2013-07-16

申请号：US13430179

申请日：2012-03-26

Applicant: Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl J. Radens

Inventor： Charles T. Black ,  Timothy J. Dalton ,  Bruce B. Doris ,  Carl J. Radens

IPC: B32B3/00

CPC classification number: H01L21/0338 ,  B81B2203/0369 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L51/0017 ,  Y10S977/882 ,  Y10S977/887 ,  Y10S977/888 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24736 ,  Y10T428/24802

Abstract: In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.

公开(公告)号：US20130140267A1

公开(公告)日：2013-06-06

申请号：US13752959

申请日：2013-01-29

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Kazuhiko SHIOMITSU ,  Hiroshi SUGIMURA ,  Toshiaki KUROSU ,  Gaku SUZUKI ,  Takao TOMONO

IPC: B44C1/22

CPC classification number: B44C1/227 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0038 ,  A61M2037/0046 ,  A61M2037/0053 ,  B29C33/42 ,  B81B2201/055 ,  B81C1/00111 ,  B81C2201/0198

Abstract: The invention discloses a method of manufacturing a microneedle including the steps of forming an island etching mask having thickness distribution on a substrate, and processing the substrate into a needle by taking advantage of a difference in etching rates between the etching mask and the substrate. The invention enables to readily control a point angle and height of the manufactured needle.

Abstract translation: 本发明公开了一种制造微针的方法，包括以下步骤：在衬底上形成具有厚度分布的岛蚀刻掩模，并通过利用蚀刻掩模和衬底之间的蚀刻速率差来将衬底处理成针。 本发明能够容易地控制所制造的针的点角度和高度。

公开(公告)号：US08426082B2

公开(公告)日：2013-04-23

申请号：US12905857

申请日：2010-10-15

Applicant: Benjamin B. Yellen ,  Gennady Friedman

Inventor： Benjamin B. Yellen ,  Gennady Friedman

IPC: G03F1/50

CPC classification number: G03F1/54 ,  B81C1/00031 ,  B81C2201/0198 ,  B82Y10/00 ,  G03F1/50

Abstract: Magnetic nanoparticle masks for lithographic applications of a substrate and methods for producing such masks via defining regions of localized magnetic field maxima and minima on a substrate are provided. Also provided are methods for producing multi-component patterns on a substrate with the magnetic nanoparticle masks.

Abstract translation: 提供了用于基板的光刻应用的磁性纳米颗粒掩模和通过限定基板上的局部磁场最大值和最小值的区域来产生这种掩模的方法。 还提供了在具有磁性纳米颗粒掩模的基底上产生多组分图案的方法。

公开(公告)号：US08394579B2

公开(公告)日：2013-03-12

申请号：US13309442

申请日：2011-12-01

Applicant: Scott Sills ,  Dan Millward

Inventor： Scott Sills ,  Dan Millward

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0392 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10 ,  H01L27/115

Abstract: Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask.

Abstract translation: 一些实施方案包括形成图案的方法，其中在基底上形成含嵌段共聚物的组合物，然后将其图案化以形成第一掩模。 随后将组合物的嵌段共聚物在第一掩模内诱​​导形成重复图案。 然后去除重复图案的部分以从第一掩模形成第二掩模。 含嵌段共聚物的组合物的图案化可以利用光刻法。 或者，基底可以具有相对于含嵌段共聚物的组合物相对于彼此不同地湿润的区域，并且第一掩模的图案化可以在形成第一掩模时在润湿中使用这种差异。

公开(公告)号：US08394483B2

公开(公告)日：2013-03-12

申请号：US11657273

申请日：2007-01-24

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B32B5/12

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/67103 ,  H05B3/145 ,  H05B3/24 ,  Y10T29/49083 ,  Y10T428/24058 ,  Y10T428/24124 ,  Y10T428/24174 ,  Y10T428/24182

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in two-dimensional square and rectangular arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

公开(公告)号：US08232211B1

公开(公告)日：2012-07-31

申请号：US13010326

申请日：2011-01-20

Applicant: Larry Clevenger ,  Timothy J. Dalton ,  Carl J. Radens

Inventor： Larry Clevenger ,  Timothy J. Dalton ,  Carl J. Radens

IPC: H01L21/311

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F1/36 ,  G03F7/0002

Abstract: Methods for producing self-aligned, self-assembled sub-ground-rule features without the need to use additional lithographic patterning. Specifically, the present disclosure allows for the creation of assist features that are localized and self-aligned to a given structure. These assist features can either have the same tone or different tone to the given feature.

Abstract translation: 用于生产自对准，自组装次地基规则特征的方法，而不需要使用附加的光刻图案。 具体地，本公开允许创建对给定结构进行局部化和自对准的辅助特征。 这些辅助功能可以具有与给定功能相同的音调或不同的音调。

公开(公告)号：US20120082822A1

公开(公告)日：2012-04-05

申请号：US13324216

申请日：2011-12-13

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B32B3/02 ,  B05D3/02 ,  B32B3/18 ,  C23F1/02 ,  B32B3/10 ,  B05D5/00 ,  B05D3/00

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20110240596A1

公开(公告)日：2011-10-06

申请号：US13157168

申请日：2011-06-09

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: C23F1/02 ,  B05D3/00 ,  B05D5/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。

公开(公告)号：US07964107B2

公开(公告)日：2011-06-21

申请号：US11703911

申请日：2007-02-08

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: H01L21/302 ,  B81C1/00

CPC classification number: C23F1/02 ,  B05D3/00 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  Y10S438/947

Abstract: Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.

Abstract translation: 嵌段共聚物可以自组装并用于本文所述的用于亚光刻图案化的方法中。 嵌段共聚物可以是二嵌段共聚物，三嵌段共聚物，多嵌段共聚物或其组合。 这样的方法可用于制造包括例如亚光刻导电线的器件。

公开(公告)号：US20110135881A1

公开(公告)日：2011-06-09

申请号：US13027183

申请日：2011-02-14

Applicant: Claus Burkhardt

Inventor： Claus Burkhardt

IPC: B81C1/00 ,  B32B3/30 ,  B44C1/22 ,  B82Y30/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0198 ,  Y10T428/24612

Abstract: In a method for transferring nanostructures into a substrate, the following order of steps is used: decorating a substrate with nanomaterials (13), etching the substrate (10), applying a coating (15), removing the nanomaterials (13), and etching the substrate (10).

Abstract translation: 在将纳米结构转移到衬底中的方法中，使用以下步骤顺序：用纳米材料（13），蚀刻衬底（10），施加涂层（15），去除纳米材料（13）和蚀刻 基板（10）。