Abstract:
A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.
Abstract:
A device amplifies light at wavelengths in the vicinity of 1420-1530 nm, using thulium doped silica-based optical fiber. This wavelength band is of interest as it falls in the low-loss optical fiber telecommunications window, and is somewhat shorter in wavelength than the currently standard erbium doped silica fiber amplifier. The device thus extends the band of wavelengths which can be supported for long-distance telecommunications. The additional wavelength band allows the data transmission rate to be substantially increased via wavelength division multiplexing (WDM), with minimal modification to the standard equipment currently used for WDM systems. The host glass is directly compatible with standard silica-based telecommunications fiber. The invention also enables modified silicate based amplifiers and lasers on a variety of alternative transitions. Specifically, an S-band thulium doped fiber amplifier (TDFA) using a true silicate fiber host is described.
Abstract:
High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content
Abstract translation:公开了具有优选氟含量<0.5重量%的氟氧化硅玻璃,适合用作光刻应用中的低于190nm的VUV波长区域的光掩模基板的高纯度氟氧化硅玻璃。 本发明的氟氧化硅玻璃在157nm波长下是透射的,使其特别适用于157nm波长区域的光掩模衬底。 本发明的光掩模基材是“真空”的氟氧化硅玻璃,其在真空紫外(VUV)波长区域中表现出非常高的透射率,同时保持通常与高纯度熔融石英相关的优异的热和物理性能。 除了含氟并且具有很少或不含OH含量之外,本发明的适合用作157nm的光掩模衬底的氟氧化硅玻璃的特征还在于具有小于1×10 17分子/ cm 3的分子氢和低氯水平。
Abstract:
The invention relates to a glass excellent in infrared absorption capability and corrosion resistance, and its fabrication process. A compound of divalent copper and a compound of a metal species for a network modifier oxide are introduced in a wet gel. Then, the wet gel is dipped in a dipping solution having a low solubility with respect to the compound of divalent copper and the compound of a metal species for a network modifier oxide for the precipitation in the wet gel of the divalent copper compound and the compound of a metal species for a network modifier oxide, followed by drying and firing. Thus, an infrared absorbing glass comprising 70 to 98 mol % of SiO2, 1 to 12 mol % of CuO and 1 to 18 mol % of a network modifier oxide other than CuO is fabricated.
Abstract:
A modified silica glass composition for providing a reduction in the multiphonon quenching for a rare-earth dopant comprising: SiO2 in a host material; a rare-earth dopant; a first SiO2 modifier; and a second SiO2 modifier; such that said first modifier and said second modifier reduce multiphonon quenching of the rare-earth dopant contained therein.
Abstract:
A synthetic quartz powder obtained by calcining a powder of silica gel, characterized in that white devitrification spots having sizes of larger than 20 &mgr;m in diameter formed in an ingot obtained by vacuum melting the synthetic quartz powder at a temperature of from 1780 to 1800° C. to form an ingot, followed by maintaining the ingot at a temperature of 1630° C. for 5 hours, are at most 10 spots/50 g.
Abstract:
A glass article is produced by doping a porous glass matrix with at least one member selected from the group consisting of PbO and Bi.sub.2 O.sub.3 and at least one member selected from the group consisting of K.sub.2 O, Rb.sub.2 O and Cs.sub.2 O, and producing a profile in dopant composition by immersion in a multiple-solvent solution.
Abstract translation:通过用选自PbO和Bi 2 O 3的至少一种元素和选自K 2 O,Rb 2 O和C 8 O 2中的至少一种的元素掺杂多孔玻璃基体来制造玻璃制品,并且通过 浸入多溶剂溶液中。
Abstract:
A glass composition having at least 85 mole percent of SiO.sub.2, where the improvement comprises at least 7 wt percent of at least one member selected from the group consisting of PbO and Bi.sub.2 O.sub.3 and at least 1.5 mole percent of at least one member selected from the group consisting of K.sub.2 O, Rb.sub.2 O and Cs.sub.2 O.
Abstract translation:一种玻璃组合物,其具有至少85摩尔%的SiO 2,其中改进包括至少7重量%的选自PbO和Bi 2 O 3中的至少一种,和至少1.5摩尔%的选自组中的至少一种 由K2O,Rb2O和Cs2O组成。
Abstract:
This invention relates to the discovery of a method for incorporating various oxides into silica-containing porous and nonporous glass materials by dissolving soluble compounds of the additive oxides, characterized as MxOy, into solutions, colloidal solutions, or suspensions of soluble silicates, reacting the mixture with an organic compound, and then firing the thus-formed body at temperatures below the softening point of the particular glass composition for a sufficient length of time to produce the porous body or non-porous glass body containing the added oxides intimately bonded to the silica network.
Abstract:
The invention relates to an optical filter material made of doped quartz glass, which at a low dopant concentration exhibits spectral transmission as high as possible of at least 80% cm−1 for operating radiation of 254 nm, transmission as low as possible in the wave range below approximately 250 nm, and an edge wavelength λc within the wave range of 230 to 250 nm. It was found that this aim is achieved by doping comprising a gallium compound, which in the wave range below 250 nm has a maximum of an absorption band and thus determines the edge wave range λc.