公开(公告)号：US20160099132A1

公开(公告)日：2016-04-07

申请号：US14964023

申请日：2015-12-09

Applicant: THE PENN STATE RESEARCH FOUNDATION

Inventor： Srinivas TADIGADAPA ,  Gokhan HATIPOGLU

IPC: H01J37/32 ,  C03C15/00

CPC classification number: H01J37/32357 ,  B81C99/0025 ,  C03C15/00 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/3341 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/31116

Abstract: A system and method for reactive ion etching (RIE) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser. In the system and method, at least one radical of the processing gas is reactive with the material to perform etching of the material, the gas diffuser is configured to introduce the processing gas into the processing region, and the substrate holder comprises an electrode that can be selectively biased to draw ions generated by the plasma source into the processing region to interact with the at least one processing gas to generate the at least one radical at the surface.

Abstract translation: 提供了一种材料的反应离子蚀刻（RIE）系统和方法。 该系统包括包括等离子体源和气体入口的等离子体室，扩散室，其包括用于支撑具有包括该材料的表面的基板的基板保持器和气体扩散器，以及耦合到气体扩散器的处理气体源。 在系统和方法中，处理气体的至少一个基团与材料反应以进行材料的蚀刻，气体扩散器被配置为将处理气体引入处理区域，并且衬底保持器包括可以 被选择性地偏置以将由等离子体源产生的离子吸引到处理区域中以与至少一个处理气体相互作用以在表面处产生至少一个自由基。

公开(公告)号：US08603591B2

公开(公告)日：2013-12-10

申请号：US12645638

申请日：2009-12-23

Applicant: Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC: H05H1/24

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：US07431796B2

公开(公告)日：2008-10-07

申请号：US10784697

申请日：2004-02-23

Applicant: Kevin P. Martin ,  Harry P. Gillis ,  Dmitri A. Choutov

Inventor： Kevin P. Martin ,  Harry P. Gillis ,  Dmitri A. Choutov

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32623 ,  B08B7/0035 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/3233 ,  H01J37/32596 ,  H01J2237/3345

Abstract: An apparatus for low-damage, anisotropic etching of substrates having the substrate mounted upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

Abstract translation: 一种用于对基板进行低损伤，各向异性蚀刻的装置，其具有安装在位于交流或直流等离子体反应器内的机械支架上的基板。 机械支撑件与等离子体反应器发生装置无关并且能够被电偏置。 对衬底进行低能电子等离子体和与衬底反应的物质。 可以在等离子体内放置能够被电偏置的附加结构，以进一步控制来自等离子体的颗粒的提取或延迟。

公开(公告)号：US20040262263A1

公开(公告)日：2004-12-30

申请号：US10895502

申请日：2004-07-20

Applicant: Micron Technology, Inc.

Inventor： Kevin G. Donohoe ,  Rich Stocks

IPC: C23F001/00

CPC classification number: H01J37/321 ,  H01J2237/3345 ,  H01J2237/3347 ,  H01L21/3085 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76232 ,  Y10S428/901 ,  Y10T428/24479 ,  Y10T428/2457

Abstract: Methods and apparatus for etching substrates such as silicon wafers are provided. In one specific approach, a surface of the substrate assembly is covered with a resist that is patterned to define features to be etched. In this approach, the surface is then exposed to a plasma in a plasma etcher so that surface areas not covered with the resist are etched, while the thickness of the resist increases or etches at a rate that is at least ten times slower than that of the exposed areas of the surface. This etching process can be followed with a conventional plasma etch. By combining the etching that increases the resist thickness with the conventional etching of resist in which the resist thins during etching, features having high-aspect-ratios can be etched.

Abstract translation: 提供了用于蚀刻诸如硅晶片的基板的方法和装置。 在一种具体方法中，衬底组件的表面被图案化的抗蚀剂覆盖以限定待蚀刻的特征。 在这种方法中，然后将表面暴露于等离子体蚀刻器中的等离子体，使得未被抗蚀剂覆盖的表面区域被蚀刻，同时抗蚀剂的厚度增加或蚀刻速率至少比 表面的暴露区域。 该蚀刻工艺可以用常规等离子体蚀刻来进行。 通过将蚀刻加强抗蚀剂厚度的蚀刻与蚀刻时的抗蚀剂凹陷的抗蚀剂的常规蚀刻相结合，可以蚀刻具有高纵横比的特征。

公开(公告)号：US20040163764A1

公开(公告)日：2004-08-26

申请号：US10786424

申请日：2004-02-25

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: H01L021/306 ,  C23C016/00

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

Abstract translation: 用于RF等离子体反应器的等离子体室外壳结构。 等离子体腔室结构是倒置杯形构造的单壁电介质外壳结构，并且具有延伸到中心位置的气体入口的具有基本平坦的圆锥形构造的内表面的天花板。 等离子体室外壳结构具有侧壁，当定位在反应器基座上时，具有大体横向于基座的下部圆柱形部分，以及在下部圆柱形部分和天花板之间的过渡部分。 过渡部分从下圆柱形部分向内延伸并且包括曲率半径。 所述结构适于覆盖所述基座以包括所述RF等离子体反应器并且限定所述基座上的等离子体处理体积。 该结构由硅，碳化硅，石英和/或氧化铝的电介质材料形成，其能够从相邻天线传输感应电力。

公开(公告)号：US06736931B2

公开(公告)日：2004-05-18

申请号：US09970121

申请日：2001-10-02

Applicant: Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC: C23C1600

CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

公开(公告)号：US06514376B1

公开(公告)日：2003-02-04

申请号：US09520623

申请日：2000-03-07

Applicant: Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

Inventor： Kenneth Collins ,  Michael Rice ,  Eric Askarinam ,  Douglas Buchberger ,  Craig Roderick

IPC: C23C1600

CPC classification number: C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.

Abstract translation: 本发明体现在等离子体反应器中，该等离子体反应器包括等离子体反应器室和工件支撑件，用于在加工期间将工件保持在室内的支撑平面附近，该室具有面向支撑件的反应器外壳部分，覆盖反应器外壳部分的冷体 ，反应器外壳部分和冷体之间的等离子体源功率施加器和在冷体和反应器外壳之间并与其接触的导热体。 热导体和冷却槽在它们之间限定冷沉接口，反应器优选地还包括在冷沉接口内的导热物质，以降低冷接口接口上的热阻。 导热物质可以是填充冷体界面的导热气体。 或者，导热物质可以是导热固体材料。 反应器可以包括在冷体中的气体歧管，其与导热气体源连通，通过来自气体歧管的冷体和通向冷体界面的入口。 反应器还可以包括夹在冷体和热导体之间的O形环装置，并且在与冷体的入口连通的几乎无穷小的厚度的冷体界面中限定含气体体积。 更一般地，反应器可以包括促进热和/或冷沉之间的界面和暴露于反应室内部大气的任何部分（例如天花板，壁或聚合物硬化前体环）之间的热传递，例如， 通过插入该导热气体或物质的界面。

公开(公告)号：US06454898B1

公开(公告)日：2002-09-24

申请号：US09482261

申请日：2000-01-11

Applicant: Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

Inventor： Kenneth Collins ,  Michael Rice ,  Douglas Buchberger ,  Craig Roderick ,  Eric Askarinam ,  Gerhard Schneider ,  John Trow ,  Joshua Tsui ,  Dennis Grimard ,  Gerald Yin ,  Robert Wu

IPC: C23C1434

CPC classification number: H01J37/32522 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.

Abstract translation: 根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体 限制磁体在壳体内。 其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。 优选地，第一和第二模块位于通道的相对侧上。 此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。 优选地，模块壳体包括诸如铝的相对非磁性的热导体，并​​且与所述室主体热接触。 冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。 如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。 此外，通道可以是晶片狭缝阀或气体进料口。 这种气体进料口可以是通过室的天花板的中心气体进料。 模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

公开(公告)号：US20020092618A1

公开(公告)日：2002-07-18

申请号：US10002940

申请日：2001-11-27

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins

IPC: C23F001/02 ,  C23C016/00

CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

Abstract translation: 本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统 所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

公开(公告)号：US06395641B2

公开(公告)日：2002-05-28

申请号：US09860698

申请日：2001-05-16

Applicant: Stephen E. Savas

Inventor： Stephen E. Savas

IPC: H01L2100

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (≳1011 cm−3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（>〜1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。