公开(公告)号：US09970111B2

公开(公告)日：2018-05-15

申请号：US14312137

申请日：2014-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei Fukushima ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Koichi Shimada ,  Takeshi Ando

IPC: C23C16/507 ,  H01L21/02 ,  H05H1/46 ,  C23C16/452 ,  H01J37/32

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32779

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

公开(公告)号：US09951414B2

公开(公告)日：2018-04-24

申请号：US15261119

申请日：2016-09-09

Applicant: IonQuest LLC

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: C23C14/14 ,  C23C14/35 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  H01J37/34

CPC classification number: C23C14/354 ,  C23C14/0057 ,  C23C14/0605 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/321 ,  H01J37/32825 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3464 ,  H01J37/3467 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53238

Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

公开(公告)号：US20180076063A1

公开(公告)日：2018-03-15

申请号：US15697818

申请日：2017-09-07

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Masanori NAKAYAMA ,  Takeshi YASUI ,  Masaki MUROBAYASHI ,  Teruo YOSHINO

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  C23C16/50 ,  C23C16/56 ,  C23C16/34

CPC classification number: H01L21/67161 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/50 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3266 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67276 ,  H01L21/67346 ,  H01L21/67709 ,  H01L21/67739 ,  H01L21/68742

Abstract: A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).

公开(公告)号：US20180068835A1

公开(公告)日：2018-03-08

申请号：US15437040

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Kenetsu YOKOGAWA ,  Tadayoshi KAWAGUCHI ,  Takamasa ICHINO

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/509

CPC classification number: H01J37/32651 ,  C23C16/509 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

公开(公告)号：US09911580B2

公开(公告)日：2018-03-06

申请号：US13306277

申请日：2011-11-29

Applicant: Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

Inventor： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC: H01L21/3065 ,  B08B6/00 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC classification number: H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

Abstract: A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

公开(公告)号：US20180053661A1

公开(公告)日：2018-02-22

申请号：US15443378

申请日：2017-02-27

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： MIN-JOON PARK ,  TAE-HWA KIM ,  JAE-HYUN LEE ,  SANG-DONG KWON

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.

公开(公告)号：US20180047542A1

公开(公告)日：2018-02-15

申请号：US15675682

申请日：2017-08-11

Applicant: Applied Materials, Inc.

Inventor： ANDREW NGUYEN ,  XUE CHANG

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/321

Abstract: Apparatus for plasma processing are provided herein. In some embodiments, a process chamber includes: a chamber body having a processing volume within; a dielectric adapter ring disposed atop the chamber body; a multi-zone showerhead disposed atop the dielectric adapter ring to provide process gas to the processing volume; and an inductively-coupled RF coil disposed about an upper portion of the chamber body to couple RF energy to the processing volume.

公开(公告)号：US09885493B2

公开(公告)日：2018-02-06

申请号：US13974324

申请日：2013-08-23

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  John Drewery ,  Jon McChesney ,  Alex Paterson

IPC: C23C16/00 ,  H01L21/306 ,  F24F13/00 ,  H01J37/32

CPC classification number: F24F13/00 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/32651 ,  H01J37/32963

Abstract: A processing chamber and a Faraday shield system for use in a plasma processing chambers are provided. One system includes a disk structure defining a Faraday shield, and the disk structure has a process side and a back side. The disk structure extends between a center region to a periphery region. The disk structure resides within the processing volume. The system also includes a hub having an internal plenum for passing a flow of air received from an input conduit and removing the flow of air from an output conduit. The hub has an interface surface that is coupled to the back side of the disk structure at the center region. A fluid delivery control is coupled to the input conduit of the hub. The fluid delivery control is configured with a flow rate regulator. The regulated air can be amplified or compressed dry air (CDA).

公开(公告)号：US09875873B2

公开(公告)日：2018-01-23

申请号：US15501935

申请日：2014-08-08

Applicant: SHIMADZU CORPORATION

Inventor： Yoshihiro Ueno ,  Hiroshi Seki ,  Hiroshi Okuda

IPC: H01J27/02 ,  H01J49/12 ,  G01N27/62 ,  H01J37/32

CPC classification number: H01J27/024 ,  B03C7/02 ,  G01N15/0266 ,  G01N27/62 ,  G01N27/622 ,  G01N2015/0038 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J49/10 ,  H01J49/12

Abstract: A particle charger is provided with: a filter (28) partitioning the inside of a housing (20) into a first space (29) and second space (30); a particle introducer (22) for introducing a particle into the first space; a gas ion supplier (10) for supplying the first space with a gas ion; a potential gradient creator (26, 27, 31) for creating a potential difference within the housing so as to make the gas ion and a charged particle resulting from a contact of the aforementioned particle with the gas ion move toward the second space; an AC voltage supplier (32, 33) for applying AC voltages having a phase difference to the neighboring electrodes (28a, b) included in the filter; a controller (35) for performing a control for applying, to the plurality of electrodes, predetermined voltages so as to allow the charged particle to pass through a gap between the electrodes while trapping the gas ion by the electrodes; and a charged particle extractor (23, 25, 34) for extracting the charged particle admitted to the second space to the outside of the housing. By this configuration, the occurrence frequency of the multi-charging is suppressed.

公开(公告)号：US20170372870A1

公开(公告)日：2017-12-28

申请号：US15650164

申请日：2017-07-14

Applicant: Mattson Technology, Inc.

Inventor： Valery A. Godyak ,  Charles Crapuchettes ,  Vladimir Nagorny

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32651 ,  H05H1/46 ,  H05H2001/4652

Abstract: Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.