公开(公告)号：US20160227644A1

公开(公告)日：2016-08-04

申请号：US14911707

申请日：2014-08-12

Applicant: DENKA COMPANY LIMITED

Inventor： Hideki HIROTSURU ,  Shuhei NONAKA ,  Toshikatsu MITSUNAGA ,  Koki IKARASHI ,  Kouji MIYATA ,  Taiki NISHI ,  Saori INOUE ,  Fumiya KOBAYASHI

IPC: H05K1/02 ,  H05K1/09 ,  H05K1/03

CPC classification number: H05K1/0271 ,  C08K7/00 ,  C08K2003/385 ,  C08K2201/004 ,  H05K1/0203 ,  H05K1/0306 ,  H05K1/0353 ,  H05K1/0373 ,  H05K1/09 ,  H05K3/022 ,  H05K3/38 ,  H05K2201/0104 ,  H05K2201/066

Abstract: A boron nitride/resin composite circuit board having high heat dissipation characteristics and high relyability is provided. A boron nitride/resin composite circuit board, including: a plate-shaped resin-impregnated boron nitride sintered body having a plate thickness of 0.2 to 1.5 mm, the plate-shaped resin-impregnated boron nitride sintered body including 30 to 85 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally, the boron nitride particles having an average long diameter of 5 to 50 μm, and 70 to 15 volume % of a resin; and a metal circuit adhered onto both principal planes of the plate-shaped resin-impregnated boron nitride sintered body, the metal circuit being copper or aluminum, wherein: a ratio of a linear thermal expansion coefficient in a plane direction of the resin-impregnated boron nitride sintered body at 40 to 150° C. (CTE1) and a linear thermal expansion coefficient of the metal circuit at 40 to 150° C. (CTE2) (CTE1/CTE2) is 0.5 to 2.0.

Abstract translation: 提供具有高散热特性和高可靠性的氮化硼/树脂复合电路板。 一种氮化硼/树脂复合电路板，包括：板厚为0.2〜1.5mm的板状树脂浸渍氮化硼烧结体，含有30〜85体积％的板状树脂浸渍氮化硼烧结体 具有三维结合的氮化硼颗粒的氮化硼烧结体，平均长径为5〜50μm的氮化硼颗粒和70〜15体积％的树脂; 以及附着在板状树脂浸渍氮化硼烧结体的两个主平面上的金属电路，金属电路为铜或铝，其中：树脂浸渍硼的平面方向的线性热膨胀系数的比例 40℃〜150℃（CTE1）的金属电路的线性热膨胀系数（CTE2）（CTE1 / CTE2）为40〜150℃。

公开(公告)号：US20160157334A1

公开(公告)日：2016-06-02

申请号：US14893255

申请日：2013-12-12

Applicant: KANEKA CORPORATION

Inventor： Aki KOUKAMI ,  Kazuo HAGIWARA ,  Keisuke OGUMA ,  Kazuhide FUJIMOTO

IPC: H05K1/02 ,  H05K1/18

CPC classification number: H05K1/0209 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3737 ,  H01L2924/0002 ,  H05K1/18 ,  H05K3/284 ,  H05K2201/0104 ,  H05K2201/06 ,  H05K2201/10371 ,  H05K2201/10545 ,  H05K2203/1327 ,  H01L2924/00

Abstract: A heat dissipation structure including: a printed circuit board; a first heat-generating element; a second heat-generating element; and a cured product of a thermally conductive curable liquid resin composition, the printed circuit board having a first surface and a second surface that is opposite to the first surface, the first heat-generating element being placed on the first surface, the second heat-generating element being placed on the second surface, the first heat-generating element generating an equal or greater amount of heat than the second heat-generating element, the second heat-generating element being surrounded by the cured product, the first heat-generating element being surrounded by a layer that has a lower thermal conductivity than the cured product.

Abstract translation: 一种散热结构，包括：印刷电路板; 第一发热元件; 第二发热元件; 和导热性可固化液体树脂组合物的固化物，所述印刷电路板具有与所述第一表面相对的第一表面和第二表面，所述第一发热元件设置在所述第一表面上， 所述第一发热元件被放置在所述第二表面上，所述第一发热元件产生与所述第二发热元件相同或更多的热量，所述第二发热元件被所述固化产物包围，所述第一发热元件 被具有比固化产物低的热导率的层包围。

公开(公告)号：US08962097B1

公开(公告)日：2015-02-24

申请号：US13665314

申请日：2012-10-31

Applicant: Edward Maxwell Yokley ,  Yaw Samuel Obeng

Inventor： Edward Maxwell Yokley ,  Yaw Samuel Obeng

IPC: B29C59/14 ,  B05D3/06 ,  B05D3/14

CPC classification number: H05K1/185 ,  B05D1/62 ,  B05D3/142 ,  B05D3/144 ,  B29C59/14 ,  C03C23/006 ,  C03C2218/31 ,  H05K3/284 ,  H05K2201/0104 ,  H05K2201/0195 ,  H05K2201/09872 ,  H05K2203/095

Abstract: A film deposition process comprising exposing a surface of a substrate to a first plasma treatment having plasma reactants in a plasma chamber to form an activated substrate surface. The activated surface has a lower water contact angle than the substrate surface before the surface activating. The process comprises introducing water vapor into the plasma chamber to form a water layer on the activated surface. The process comprises introducing pre-cursors molecules into the plasma chamber in the presence of a second plasma to graft a layer of reacted pre-cursor molecules on the water layer.

Abstract translation: 一种成膜方法，包括将基板的表面暴露于在等离子体室中具有等离子体反应物的第一等离子体处理以形成活化的基板表面。 激活的表面在表面激活之前具有比基底表面更低的水接触角。 该方法包括将水蒸气引入等离子体室中以在活化表面上形成水层。 该方法包括在存在第二等离子体的情况下将预游离子分子引入等离子体室，以在水层上移植一层反应的前体分子。