公开(公告)号：US20180029881A1

公开(公告)日：2018-02-01

申请号：US15722214

申请日：2017-10-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Wen Cheng ,  Yi-Chuan Teng ,  Hung-Chia Tsai ,  Chia-Hua Chu

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/0023 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00301 ,  H01L21/76898 ,  H01L2224/11 ,  H01L2924/16235

Abstract: A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.

公开(公告)号：US09862596B2

公开(公告)日：2018-01-09

申请号：US14355464

申请日：2012-11-02

Applicant: Continental Teves AG & Co. OHG

Inventor： Stefan Günthner ,  Bernhard Schmid

IPC: B81C1/00 ,  G01P15/08

CPC classification number: B81C1/00293 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00357 ,  G01P15/0802

Abstract: A micromechanical component formed from, a substrate (100) having a first cavity (112) and a second cavity (113), a first micromechanical structure (117) arranged in the first cavity (112), and a second micromechanical structure (118) arranged in the second cavity (113). The first cavity (112) and the second cavities having respective first and second gas pressures having different values. The first gas pressure is provided by a closed configuration of the first cavity (112) and a first channel (115) opens into the second cavity (113), and the second gas pressure is adjustable via the first channel (115).

公开(公告)号：US20180002164A1

公开(公告)日：2018-01-04

申请号：US15545922

申请日：2016-01-08

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Munenori DEGAWA ,  Hiroshi KIKUCHI ,  Akihiro OKAMOTO ,  Masashi YURA ,  Masahide HAYASHI

IPC: B81B7/00 ,  B81B3/00

CPC classification number: B81B7/0041 ,  B81B3/00 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01C19/5747 ,  G01C19/5769 ,  G01P15/08 ,  G01P15/125 ,  G01P15/18 ,  H01L29/84 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The purpose of the present invention is to improve the pressure resistance of a cavity in a semiconductor sensor device employing a resin package, and to do so without adversely affecting the embeddability of an electrically conductive member. The semiconductor sensor device has a gap 1a sealed in an airtight manner inside a laminate structure of a plurality of laminated substrates 1, 4, and 5, and has a structure in which the outside of the laminate structure is covered by a resin, wherein a platy component 2 having at least one side that is greater in length than the length of one side of the gap 1a along this side is arranged to the outside of an upper wall 1b of the gap 1, the upper wall 1b of the gap being mechanically suspended by the platy component 2.

公开(公告)号：US09857390B2

公开(公告)日：2018-01-02

申请号：US14819756

申请日：2015-08-06

Applicant: Seiko Epson Corporation

Inventor： Teruo Takizawa

IPC: G01C19/56 ,  G01P1/02 ,  G01C19/5747 ,  G01C19/5712 ,  G01C19/5719 ,  G01D11/24 ,  B81B7/02 ,  G01C19/5783

CPC classification number: G01P1/02 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/031 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5747 ,  G01C19/5783 ,  G01D11/245 ,  G01P1/023

Abstract: A physical quantity sensor has a package, which is provided with a substrate and a lid and has an internal space inside, and a functional element which is accommodated in the internal space, the lid is formed on a partition wall section which is provided on the periphery of the internal space in planar view and has a communication hole which causes a lower surface at the substrate side to communicate with an upper surface at the opposite side to the substrate, and the communication hole communicates with the internal space via a groove which is formed in the substrate.

公开(公告)号：US20170369305A1

公开(公告)日：2017-12-28

申请号：US15195061

申请日：2016-06-28

Applicant: Robert Bosch GmbH

Inventor： Mikko VA Suvanto

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81C1/0023 ,  H01L2224/48137 ,  H04R1/326 ,  H04R2201/003

Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

公开(公告)号：US20170345948A1

公开(公告)日：2017-11-30

申请号：US15536716

申请日：2016-01-07

Applicant: DENSO CORPORATION

Inventor： Kiyomasa SUGIMOTO

IPC: H01L29/84 ,  G01P15/18 ,  G01P15/125 ,  B81B3/00 ,  G01P15/08

CPC classification number: H01L29/84 ,  B81B2201/0235 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0842

Abstract: An acceleration sensor includes: a semiconductor substrate that includes a support substrate and a semiconductor layer; a first-direction movable electrode; a second-direction movable electrode; a first-direction fixed electrode; a second-direction fixed electrode; and a support member. The acceleration sensor is configured to detect acceleration in a first direction in the surface direction of the semiconductor substrate and acceleration in a second direction orthogonal to the first direction and parallel to the surface direction. The first-direction movable electrode and the first-direction fixed electrode are provided such that an angle formed by an extended direction of the first-direction movable electrode and the first-direction fixed electrode and the second direction is sin−1(d/L)[deg], and the second-direction movable electrode and the second-direction fixed electrode are provided such that an angle formed by an extended direction of the second-direction movable electrode and the second-direction fixed electrode and the first direction is sin−1(d/L)[deg].

公开(公告)号：US20170343579A1

公开(公告)日：2017-11-30

申请号：US15541389

申请日：2016-01-04

Applicant: NORTHROP GRUMMAN LITEF GMBH

Inventor： PETER LEINFELDER

IPC: G01P15/125 ,  G01P15/08

CPC classification number: G01P15/125 ,  B81B2201/0235 ,  B81B2203/051 ,  G01P15/0802 ,  G01P15/131 ,  G01P21/00 ,  G01P2015/0814

Abstract: The invention relates to an acceleration sensor (400) comprising an excitation mass (420) having excitation electrodes (430), which excitation mass is movably mounted over a substrate (410) along a movement axis (x) and comprising detection electrodes (440) which are permanently connected to the substrate (410) and allocated to the excitation electrodes (430). A first group of pairings (450) of excitation electrode (430) and allocated detection electrodes (440) is suitable for deflecting the excitation mass (420) along the movement axis (x) in a first direction (460). A second group of pairings (450) of excitation electrodes (430) and allocated detection electrodes (440) is suitable for deflecting the excitation mass (420) along the movement axis (x) in a second direction (465), which is opposite the first direction (460). The number of pairings (450) in the first group is equal to the number of pairings (450) in the second group. The averaged distance between excitation electrodes (430) and detection electrodes (440) of the pairings (450) of the first group corresponds to the averaged distance between excitation electrodes (430) and detection electrodes (440) of the pairings (450) of the second group.

公开(公告)号：US20170341927A1

公开(公告)日：2017-11-30

申请号：US15582333

申请日：2017-04-28

Applicant: Robert Bosch GmbH

Inventor： Benny Pekka Herzogenrath ,  Johannes Classen

IPC: B81B3/00 ,  G01C19/5712 ,  B81C1/00 ,  G01P15/125

CPC classification number: B81B3/0008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2203/0181 ,  B81B2203/0338 ,  B81C1/00174 ,  B81C1/00476 ,  B81C2201/0132 ,  G01C19/56 ,  G01C19/5656 ,  G01C19/5712 ,  G01P1/003 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0831 ,  G01P2015/0834 ,  G01P2015/0837

Abstract: A micromechanical sensor that is produced surface-micromechanically includes at least one mass element formed in a third functional layer that is non-perforated at least in certain portions. The sensor has a gap underneath the mass element that is formed by removal of a second functional layer and at least one oxide layer. The removal of the at least one oxide layer takes place by introducing a gaseous etching medium into a defined number of etching channels arranged substantially parallel to one another. The etching channels are configured to be connected to a vertical access channel in the third functional layer.

公开(公告)号：US09824882B2

公开(公告)日：2017-11-21

申请号：US14982380

申请日：2015-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Stefano Losa ,  Raffaella Pezzuto ,  Roberto Campedelli ,  Matteo Perletti ,  Luigi Esposito ,  Mikel Azpeitia Urquia

IPC: H01L21/02 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

公开(公告)号：US09810258B2

公开(公告)日：2017-11-07

申请号：US15379512

申请日：2016-12-15

Applicant: Raviv Erlich ,  Yuval Gerson

Inventor： Raviv Erlich ,  Yuval Gerson

IPC: F16C11/12 ,  F16F1/48 ,  B81C1/00 ,  B81B3/00 ,  G01P15/093 ,  G01P15/125 ,  G01P15/09 ,  G01C19/02 ,  G02B26/08 ,  G02B26/10

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.