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    METHOD FOR CREATING A MICROMECHANICAL MEMBRANE STRUCTURE AND MEMS COMPONENT
    51.
    发明申请
    METHOD FOR CREATING A MICROMECHANICAL MEMBRANE STRUCTURE AND MEMS COMPONENT 有权
    用于创建微机电薄膜结构和MEMS组件的方法

    公开(公告)号：US20120126346A1

    公开(公告)日：2012-05-24

    申请号：US13290905

    申请日：2011-11-07

    Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    IPC: H01L29/84 ,  H01L21/02

    CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

    Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。

    ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE
    53.
    发明申请
    ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE 有权
    稳定的高倍率半导体器件

    公开(公告)号：US20110180931A1

    公开(公告)日：2011-07-28

    申请号：US13121268

    申请日：2009-09-24

    Applicant: Freddy Roozeboom ,  Martijn Goossens ,  Willen Frederik Adrianus Besling ,  Nynke Verhaegh

    Inventor： Freddy Roozeboom ,  Martijn Goossens ,  Willen Frederik Adrianus Besling ,  Nynke Verhaegh

    IPC: H01L23/48 ,  G03F1/00

    CPC classification number: H01L29/41 ,  B81B3/007 ,  B81B2201/06 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L28/91

    Abstract: The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

    Abstract translation: 本发明涉及一种半导体器件，其包括第一表面和布置在第一表面上的相邻的第一和第二电气元件，其中第一和第二元件中的每个元件在第一方向上从第一表面延伸，第一元件具有 基本上垂直于第一方向的横截面和至少部分地沿第一方向延伸的侧壁表面，其中侧壁表面包括沿着基本上平行于第一方向延伸的线邻接第一部分的第一部分和第二部分，其中， 第一和第二部分相对于彼此以一定角度放置以提供内角，其中内角处的侧壁表面至少部分地布置成距离第二元件的面对部分恒定的距离R，以提供 机械加强结构在内角。

    METHOD OF ETCHING BACKSIDE INK SUPPLY CHANNELS FOR AN INKJET PRINTHEAD
    54.
    发明申请
    METHOD OF ETCHING BACKSIDE INK SUPPLY CHANNELS FOR AN INKJET PRINTHEAD 审中-公开
    用于喷墨打印机的背面墨水通道的方法

    公开(公告)号：US20110024389A1

    公开(公告)日：2011-02-03

    申请号：US12905078

    申请日：2010-10-15

    Applicant: Darrell LaRue McReynolds ,  Kia Silverbrook

    Inventor： Darrell LaRue McReynolds ,  Kia Silverbrook

    IPC: C23F1/00

    CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

    Abstract: A method of etching backside ink supply channels for an inkjet printhead. The method includes the steps of: (a) attaching a frontside of the printhead to a handle wafer; (b) etching the backside of the printhead using an anisotropic DRIE process to form a plurality of ink supply channels, the DRIE process including alternating etching and passivation steps, the passivation steps depositing a polymeric coating on sidewalls of the ink supply channels; and (c) removing the polymeric coating by etching the backside of the printhead in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C.

    Abstract translation: 一种蚀刻用于喷墨打印头的背面供墨通道的方法。 该方法包括以下步骤：（a）将打印头的前侧连接到手柄晶片; （b）使用各向异性DRIE工艺蚀刻打印头的背面以形成多个供墨通道，所述DRIE工艺包括交替的蚀刻和钝化步骤，所述钝化步骤在所述供墨通道的侧壁上沉积聚合物涂层; 和（c）通过使用O 2等离子体在偏压等离子体蚀刻室中蚀刻打印头的背面去除聚合物涂层。 室温度在90至180℃的范围内

    Method for manufacturing movable portion of semiconductor device
    55.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US07214625B2

    公开(公告)日：2007-05-08

    申请号：US10936539

    申请日：2004-09-09

    Applicant: Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    Inventor： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC: H01L21/302 ,  H01L21/461 ,  H01L29/82

    CPC classification number: B81C1/00619 ,  B81C2201/0112

    Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    Abstract translation: 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method and device for anisotropic etching of high aspect ratio
    56.
    发明申请
    Method and device for anisotropic etching of high aspect ratio 审中-公开
    高纵横比各向异性蚀刻的方法和装置

    公开(公告)号：US20050103749A1

    公开(公告)日：2005-05-19

    申请号：US10500654

    申请日：2002-12-31

    Applicant: Michel Puech ,  Emile van der Drift

    Inventor： Michel Puech ,  Emile van der Drift

    IPC: B81C99/00 ,  H01L21/3065 ,  H01L21/308 ,  C23F1/00

    CPC classification number: B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085

    Abstract: According to the invention, a substrate (2) contained in an enclosure (1) containing an atmosphere (5) that is maintained at low pressure by a device (6, 7) for generating a vacuum is subjected to plasma etching. Plasma generation means (8) generate a plasma (9) which acts on the surface (2a) of the substrate (2). The etching method subjects the substrate (2) to an alternating succession of steps comprising: an attack step using a plasma of etching gas coming from an etching gas source (19), a second step of passivation by means of a plasma of passivation gas coming from a passivation gas source (20), and a pulse step of selective depassivation by the action of a plasma of a cleaning gas coming from a cleaning gas source (21) and serving to remove the polymer from the bottom zones of cavities (2b) more effectively than does the etching gas. This makes it possible to make cavities (2b) having an aspect ratio greater than 30, and to do so at higher speed, with good selectivity relative to the mask protecting the substrate (2).

    Abstract translation: 根据本发明，包含在通过用于产生真空的装置（6,7））保持在低压下的气氛（5）的外壳（1）中的基板（2）进行等离子体蚀刻。 等离子体产生装置（8）产生作用在衬底（2）的表面（2a）上的等离子体（9）。 蚀刻方法使衬底（2）进行交替连续的步骤，包括：使用来自蚀刻气体源（19）的蚀刻气体的等离子体的攻击步骤，通过钝化气体的等离子体进行钝化的第二步骤 来自钝化气体源（20）的脉冲步骤和通过来自清洁气体源（21）的清洁气体的等离子体的作用的选择性去钝化并用于从空腔的底部区域（2B）去除聚合物的脉冲步骤 ）比蚀刻气体更有效。 这使得可以使纵横比大于30的空腔（2b），并且相对于保护基板（2）的掩模具有良好的选择性，以更高的速度进行。

    Method for producing surface micromechanical structures, and sensor
    57.
    发明授权
    Method for producing surface micromechanical structures, and sensor 失效
    生产表面微机械结构和传感器的方法

    公开(公告)号：US06867061B2

    公开(公告)日：2005-03-15

    申请号：US10467216

    申请日：2002-02-04

    Applicant: Frank Fischer ,  Wilhelm Frey ,  Lars Metzger

    Inventor： Frank Fischer ,  Wilhelm Frey ,  Lars Metzger

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L27/20 ,  H01L29/82 ,  H01L29/84

    CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00619 ,  B81C2201/0112 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: A method is described for producing surface micromechanical structures having a high aspect ratio, a sacrificial layer being provided between a substrate and a function layer, trenches being provided by a plasma etching process in the function layer, at least some of these trenches exposing surface regions of the sacrificial layer. To increase the aspect ratio of the trenches, an additional layer is deposited on the side walls of the trenches in at least some sections, but not on the exposed surface regions of the sacrificial layer. In addition, a sensor is described, in particular an acceleration sensor or a rotational rate sensor.

    Abstract translation: 描述了一种用于生产具有高纵横比的表面微机械结构的方法，牺牲层设置在衬底和功能层之间，沟槽通过功能层中的等离子体蚀刻工艺提供，这些沟槽中的至少一些暴露表面区域 的牺牲层。 为了增加沟槽的纵横比，在至少一些部分中的沟槽的侧壁上而不是在牺牲层的暴露的表面区域上沉积附加层。 此外，描述了传感器，特别是加速度传感器或转速传感器。

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