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    Process and system for fabrication of patterns on a surface
    51.
    发明授权
    Process and system for fabrication of patterns on a surface 有权
    用于在表面上制作图案的工艺和系统

    公开(公告)号：US08524100B2

    公开(公告)日：2013-09-03

    申请号：US13003484

    申请日：2009-07-03

    Applicant: Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    Inventor： Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    IPC: C03C15/00

    CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

    Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    Abstract translation: 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。

    Method for manufacturing a patterned structure
    53.
    发明授权
    Method for manufacturing a patterned structure 失效
    图案化结构的制造方法

    公开(公告)号：US07759609B2

    公开(公告)日：2010-07-20

    申请号：US10547798

    申请日：2004-03-04

    Applicant: Micha Asscher ,  Gabriel Kerner

    Inventor： Micha Asscher ,  Gabriel Kerner

    IPC: G03F7/00 ,  B82B3/00

    CPC classification number: G03F7/2051 ,  B23K2103/14 ,  B41M5/24 ,  B81C1/00031 ,  B81C2201/0109 ,  B81C2201/0143 ,  B81C2201/0159 ,  H01L21/0272 ,  H01L21/32131 ,  H01L21/76838 ,  H05K3/027 ,  H05K3/048

    Abstract: A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography.

    Abstract translation: 提出了在衬底上形成材料的微观或纳米图案的方法。 该方法利用缓冲层辅助激光图案化（BLALP）。 在基板上形成层状结构，该分层结构是由要形成的图案限定的基板的间隔开的区域的形式，每个区域包括弱物理缓冲层和待图案化的材料层 缓冲层顶部。 然后将热处理施加到层状结构以去除所述区域中的剩余缓冲层，从而由缓冲层辅助激光图案化形成在衬底上的所述材料的稳定图案。 该方法可以利用正光刻或负光刻。 可以通过使用用于光学光刻的标准掩模的单个均匀激光脉冲的照射来实现图案化。

    THREE-DIMENSIONAL NANO MATERIAL STRUCTURES
    55.
    发明申请
    THREE-DIMENSIONAL NANO MATERIAL STRUCTURES 审中-公开
    三维纳米材料结构

    公开(公告)号：US20100047722A1

    公开(公告)日：2010-02-25

    申请号：US12198019

    申请日：2008-08-25

    Applicant: Youngtack SHIM

    Inventor： Youngtack SHIM

    IPC: G03F7/20

    CPC classification number: G03F7/0037 ,  B29C64/165 ,  B81C99/0085 ,  B81C2201/0159 ,  G03F7/0035

    Abstract: Techniques for manufacturing a 3-D structure of nano materials are provided. In one embodiment, a method of manufacturing a 3-D structure of nano materials resembling a target structure comprises providing a substrate, and for each segment, forming a mask layer, and patterning the mask layer to form one or more grooves, and filling the grooves with the nano materials. The grooves correspond to one of the horizontal segments of the 3-D structure to be assembled. The method also comprises removing the mask layers.

    Abstract translation: 提供了制造纳米材料3-D结构的技术。 在一个实施例中，制造类似于目标结构的纳米材料的3-D结构的方法包括提供衬底，并为每个部分形成掩模层，以及图案化掩模层以形成一个或多个凹槽，并填充 凹槽与纳米材料。 凹槽对应于要组装的3-D结构的水平段之一。 该方法还包括去除掩模层。

    Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure
    58.
    发明申请
    Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure 有权
    用于在微电子或微机械结构的沟槽中制造荫罩的方法

    公开(公告)号：US20060003560A1

    公开(公告)日：2006-01-05

    申请号：US11154943

    申请日：2005-06-17

    Applicant: Jorn Regul ,  Dietmar Temmler

    Inventor： Jorn Regul ,  Dietmar Temmler

    IPC: H01L21/265 ,  H01L21/425 ,  H01L21/302

    CPC classification number: H01L21/26586 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00404 ,  B81C2201/0159 ,  H01L21/32139 ,  H01L27/10867 ,  Y10S438/944

    Abstract: The present invention provides a method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure, comprising the steps of: providing a trench in the microelectronic or micromechanical structure; providing a partial filling in the trench; providing a first liner mask layer on the partial filling; providing a sacrificial filling on the liner mask layer to completely fill the trench; shallow etching back of the sacrificial filling into the trench; forming a first mask on the top side of the sacrificial filling in the trench; removing a subregion of the sacrificial filling in the trench using the first mask; and optionally removing a subregion of the first liner mask layer below it on the partial filling, the remaining subregion of the sacrificial filling in the trench serving as a second mask.

    Abstract translation: 本发明提供了一种在微电子或微机械结构的沟槽中制造荫罩的方法，包括以下步骤：在微电子或微机械结构中提供沟槽; 提供在沟槽中的部分填充; 在部分填充上提供第一衬垫掩模层; 在衬垫掩模层上提供牺牲填充物以完全填充沟槽; 将蚀刻后的浅层刻蚀成沟槽; 在沟槽中的牺牲填充物的顶侧上形成第一掩模; 使用所述第一掩模去除所述沟槽中的牺牲填充的子区域; 并且可选地在部分填充上去除其下方的第一衬垫掩模层的子区域，在沟槽中牺牲填充的剩余子区域用作第二掩模。

    Monolithic three-dimensional structures
    59.
    发明申请
    Monolithic three-dimensional structures 有权
    单片三维结构

    公开(公告)号：US20030054578A1

    公开(公告)日：2003-03-20

    申请号：US09955123

    申请日：2001-09-19

    Applicant: BinOptics Corporation

    Inventor： Alex Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01L021/66 ,  G01R031/26 ,  H01L021/31 ,  H01L021/469 ,  H01L033/00

    CPC classification number: G02B6/12002 ,  B81B2201/047 ,  B81C99/008 ,  B81C2201/0159 ,  G02B6/13 ,  G02B6/4204 ,  G02B6/4249 ,  G03F7/0037 ,  Y10S438/948 ,  Y10S438/949 ,  Y10S438/95

    Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

    Abstract translation: 通过一系列处理步骤在基板的表面上制造任意形状的三维结构，其中单片结构以连续的层制造。 将第一层光致抗蚀剂材料旋转到基底表面上，并以对应于最终结构的形状的所需图案以结构中相应的横截面水平曝光。 暴露后层不发达; 相反，沉积第二层光致抗蚀剂材料并且也以期望的图案曝光。 随后的层被旋转到现有层的顶部表面上并暴露，并且在完成相继层级的各层限定所需结构的相应水平时，所有层都同时显现出离开三维结构。

    Microstructure and methods for fabricating such structure
    60.
    发明授权
    Microstructure and methods for fabricating such structure 有权
    用于制造这种结构的微结构和方法

    公开(公告)号：US06015988A

    公开(公告)日：2000-01-18

    申请号：US197391

    申请日：1998-11-20

    Applicant: Dirk Tobben ,  Peter Weigand

    Inventor： Dirk Tobben ,  Peter Weigand

    IPC: H01L27/04 ,  B81B3/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/72

    CPC classification number: B81C1/00111 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91 ,  B81C2201/0109 ,  B81C2201/0159 ,  H01L28/88 ,  H01L28/92

    Abstract: A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 .mu.m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., depositing a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.

    Abstract translation: 一种用于形成微结构的方法包括光刻地形成垂直延伸的柱体，以在衬底表面的一部分上提供第一结构。 可流动的牺牲材料沉积在第一结构的表面上。 可流动的牺牲物质地从柱的顶表面和侧壁部分流出到衬底的表面的相邻部分上以提供第二结构。 非牺牲材料沉积在第二结构的表面上。 沉积非牺牲材料以符合第二结构的表面。 非牺牲材料沉积在牺牲材料上，在侧壁部分上方并在柱的顶表面上方。 选择性地去除沉积的牺牲材料，同时非牺牲材料保留以形成具有由非牺牲材料提供的水平构件的第三结构。 水平构件通过柱的下部支撑在基板的表面上方预定距离。 可流动材料是可流动的氧化物，例如氢倍半硅氧烷玻璃，柱的宽度小于20μm。 用单个光刻步骤形成的所得结构用于支撑沉积在其上的电容器。 电容器形成为一系列沉积步骤; 即在支撑结构的表面上沉积第一导电层; 在导电层上沉积介电层; 以及在所述电介质层上沉积第二导电层。

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