公开(公告)号：US09580301B2

公开(公告)日：2017-02-28

申请号：US14411537

申请日：2013-06-29

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Dan Dai ,  Xinwei Zhang ,  Guoping Zhou ,  Changfeng Xia

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00825 ,  B81B7/0029 ,  B81C1/0038 ,  B81C2201/0167 ,  B81C2201/053

Abstract: A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

Abstract translation: MEMS芯片（100）包括硅衬底层（110），第一氧化层（120）和第一薄膜层（130）。 硅衬底层包括用于MEMS工艺的前表面（112）和后表面（114），前表面和后表面都是​​抛光表面。 第一氧化层主要由二氧化硅制成，并形成在硅衬底层的后表面上。 第一薄膜层主要由氮化硅制成，并且形成在第一氧化层的表面上。 在上述MEMS芯片中，通过在硅衬底层的后表面依次层叠第一氧化层和第一薄膜层，有效地保护后表面以防止在MEMS工艺过程中的划痕损伤。 还提供了一种用于MEMS芯片的制造方法。

公开(公告)号：US20160325987A1

公开(公告)日：2016-11-10

申请号：US14706941

申请日：2015-05-07

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: B81C1/00 ,  H01L29/66 ,  H01L21/02 ,  B81B3/00 ,  H01L21/324

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

Abstract translation: 微电子器件含有化学计量在2原子％以内的高性能氮化硅层，其具有600MPa至1000MPa的低应力，并且通过LPCVD工艺形成的氢含量低于5原子％。 LPCVD方法使用氨和二氯硅烷气体的比例为4至6，压力为150毫托至250毫托，温度为800℃至820℃。

公开(公告)号：US20160052778A1

公开(公告)日：2016-02-25

申请号：US14467521

申请日：2014-08-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract translation: 通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。

公开(公告)号：US09041128B2

公开(公告)日：2015-05-26

申请号：US13768246

申请日：2013-02-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： George A. Dunbar, III ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

IPC: H01L29/84 ,  H01H1/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A Micro-Electro-Mechanical System (MEMS). The MEMS includes a lower chamber with a wiring layer and an upper chamber which is connected to the lower chamber. A MEMS beam is suspended between the upper chamber and the lower chamber. A lid structure encloses the upper chamber, which is devoid of structures that interfere with a MEMS beam. The lid structure has a surface that is conformal to a sacrificial material vented from the upper chamber.

Abstract translation: 微机电系统（MEMS）。 MEMS包括具有布线层的下室和连接到下室的上室。 MEMS梁悬挂在上室和下室之间。 盖结构包围上室，其没有干扰MEMS梁的结构。 盖结构具有与从上室排出的牺牲材料共形的表面。

公开(公告)号：US08964280B2

公开(公告)日：2015-02-24

申请号：US13356447

申请日：2012-01-23

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: G02B26/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

公开(公告)号：US08685778B2

公开(公告)日：2014-04-01

申请号：US12973285

申请日：2010-12-20

Applicant: Christopher V. Jahnes ,  Anthony K. Stamper

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a lower wiring layer. The method further includes forming a layer. The method further includes forming a second sacrificial cavity layer over the first sacrificial layer and in contact with the layer. The method further includes forming a lid on the second sacrificial cavity layer. The method further includes forming at least one vent hole in the lid, exposing a portion of the second sacrificial cavity layer. The method further includes venting or stripping the second sacrificial cavity layer such that a top surface of the second sacrificial cavity layer is no longer touching a bottom surface of the lid, before venting or stripping the first sacrificial cavity layer thereby forming a first cavity and second cavity, respectively.

Abstract translation: 形成至少一个微机电系统（MEMS）腔的方法包括在下布线层上形成第一牺牲腔层。 该方法还包括形成层。 该方法还包括在第一牺牲层上形成与层接触的第二牺牲腔层。 该方法还包括在第二牺牲腔层上形成盖子。 该方法还包括在盖中形成至少一个通气孔，暴露第二牺牲腔层的一部分。 该方法还包括排气或剥离第二牺牲腔层，使得第二牺牲腔层的顶表面在不排除或剥离第一牺牲腔层之前不再接触盖的底表面，从而形成第一腔和第二腔 腔。

公开(公告)号：US20130302933A1

公开(公告)日：2013-11-14

申请号：US13945892

申请日：2013-07-18

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Tzung-Han TAN ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang ,  Meng-Jia Lin

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The method of the present invention includes the following steps. A substrate is provided, including a circuit region and a MEMS region separated from each other. An interconnection structure is formed on the substrate in the circuit region, and simultaneously a plurality of dielectric layers and a first electrode are formed on the substrate in the MEMS region. The first electrode includes at least two metal layers and a protection ring. The metal layers and the protection ring are formed in the dielectric layers. The protection ring connects two adjacent metal layers, so as to define an enclosed space between the two adjacent metal layers. A second electrode is formed on the first electrode. The dielectric layers outside the enclosed space in the MEMS region are removed to form a cavity between the electrodes.

Abstract translation: 描述了微机电系统（MEMS）装置及其制造方法。 本发明的方法包括以下步骤。 提供了包括彼此分离的电路区域和MEMS区域的衬底。 在电路区域的基板上形成有互连结构，在MEMS区域的基板上同时形成有多个电介质层和第一电极。 第一电极包括至少两个金属层和保护环。 金属层和保护环形成在电介质层中。 保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。 在第一电极上形成第二电极。 除去MEMS区域中的封闭空间外的电介质层，以在电极之间形成空腔。

公开(公告)号：US20130221454A1

公开(公告)日：2013-08-29

申请号：US13768246

申请日：2013-02-15

Applicant: International Business Machines Corporation

Inventor： George A. DUNBAR, III ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A Micro-Electro-Mechanical System (MEMS). The MEMS includes a lower chamber with a wiring layer and an upper chamber which is connected to the lower chamber. A MEMS beam is suspended between the upper chamber and the lower chamber. A lid structure encloses the upper chamber, which is devoid of structures that interfere with a MEMS beam. The lid structure has a surface that is conformal to a sacrificial material vented from the upper chamber.

Abstract translation: 微机电系统（MEMS）。 MEMS包括具有布线层的下室和连接到下室的上室。 MEMS梁悬挂在上室和下室之间。 盖结构包围上室，其没有干扰MEMS梁的结构。 盖结构具有与从上室排出的牺牲材料共形的表面。

公开(公告)号：US08229253B2

公开(公告)日：2012-07-24

申请号：US12825214

申请日：2010-06-28

Applicant: Fan Zhong ,  Lior Kogut

Inventor： Fan Zhong ,  Lior Kogut

IPC: G02F1/01

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US20110315527A1

公开(公告)日：2011-12-29

申请号：US12974854

申请日：2010-12-21

Applicant: Dinh DANG ,  Thai DOAN ,  George A. DUNBAR, III ,  Zhong-Xiang HE ,  Russell T. HERRIN ,  Christopher V. JAHNES ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER ,  John G. TWOMBLY ,  Eric J. WHITE

Inventor： Dinh DANG ,  Thai DOAN ,  George A. DUNBAR, III ,  Zhong-Xiang HE ,  Russell T. HERRIN ,  Christopher V. JAHNES ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER ,  John G. TWOMBLY ,  Eric J. WHITE

IPC: H01H57/00 ,  H01L21/66 ,  G06F17/50 ,  H01L21/28

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.

Abstract translation: 提供了平面腔微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括使用反向镶嵌工艺形成具有平面表面的至少一个微机电系统（MEMS）空腔。