公开(公告)号：US09630836B2

公开(公告)日：2017-04-25

申请号：US14872094

申请日：2015-09-30

Applicant: MEMS DRIVE, INC.

Inventor： Roman Gutierrez ,  Tony Tang ,  Xiaolei Liu ,  Matthew Ng ,  Guiqin Wang

IPC: H01L21/00 ,  B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/033 ,  B81C1/00619 ,  B81C99/0095 ,  B81C2201/0132 ,  B81C2201/056

Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

公开(公告)号：US20170088418A1

公开(公告)日：2017-03-30

申请号：US14872094

申请日：2015-09-30

Applicant: MEMS DRIVE, INC.

Inventor： ROMAN GUTIERREZ ,  TONY TANG ,  XIAOLEI LIU ,  MATTHEW NG ,  GUIQIN WANG

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/033 ,  B81C1/00619 ,  B81C99/0095 ,  B81C2201/0132 ,  B81C2201/056

Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

公开(公告)号：US09422149B2

公开(公告)日：2016-08-23

申请号：US14532723

申请日：2014-11-04

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Emmanuel P. Quevy ,  Louis Nervegna ,  Jeremy R. Hui

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01N27/22

CPC classification number: B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227

Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。

公开(公告)号：US08993362B1

公开(公告)日：2015-03-31

申请号：US13189471

申请日：2011-07-22

Applicant: Anthony F. Flannery, Jr.

Inventor： Anthony F. Flannery, Jr.

IPC: H01L21/00

CPC classification number: B81C1/00944 ,  B81B2207/015 ,  B81C2201/056

Abstract: A method and structure for fabricating a monolithic integrated MEMS device. The method includes providing a substrate having a surface region and forming at least one conduction material and at least one insulation material overlying at least one portion of the surface region. At least one support structure can be formed overlying at least one portion of the conduction and insulation surface regions, and at least one MEMS device can be formed overlying the support structure(s) and the conduction and insulation surface regions. In a variety of embodiments, the support structure(s) can include dielectric or oxide materials. The support structure(s) can then be removed and a cover material can be formed overlying the MEMS device(s), the conduction and insulation materials, and the substrate. In various embodiments, the removal of the support structure(s) can be accomplished via a vapor etching process.

Abstract translation: 用于制造单片集成MEMS器件的方法和结构。 该方法包括提供具有表面区域并形成至少一个导电材料的基底和覆盖在表面区域的至少一部分上的至少一个绝缘材料。 可以形成至少一个支撑结构，覆盖导电和绝缘表面区域的至少一部分，并且至少一个MEMS器件可以形成在覆盖支撑结构和导电和绝缘表面区域上。 在各种实施例中，支撑结构可以包括电介质或氧化物材料。 然后可以移除支撑结构，并且可以形成覆盖MEMS器件，导电和绝缘材料以及衬底的覆盖材料。 在各种实施例中，支撑结构的移除可以通过蒸汽蚀刻工艺来实现。

公开(公告)号：US08501584B2

公开(公告)日：2013-08-06

申请号：US12514352

申请日：2007-11-01

Applicant: Philippe Marmy ,  Jean-Luc Helfer ,  Thierry Conus

Inventor： Philippe Marmy ,  Jean-Luc Helfer ,  Thierry Conus

IPC: H01L21/30 ,  H01L21/46 ,  C23F1/00 ,  G04B15/00 ,  G04B1/00

CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/019 ,  B81C2201/056 ,  B81C2203/038 ,  B81C2203/051 ,  G04B31/004 ,  G04D3/0069 ,  Y10T29/49579

Abstract: The process comprises the following steps: a) a first element (3) or a plurality of said first elements (3) is/are machined in a first silicon wafer (1) keeping said elements (3) joined together via material bridges (5); b) step a) is repeated with a second silicon wafer (2) in order to machine a second element (4), differing in shape from that of the first element (3), or a plurality of said second elements (4); c) the first and second elements (3, 4) or the first and second wafers (1, 2) are applied, face to face, with the aid of positioning means (6, 7); d) the assembly formed in step c) undergoes oxidation; and e) the parts (10) are separated form the wafers (1, 2). Micromechanical timepiece parts obtained according to the process.

Abstract translation: 该方法包括以下步骤：a）在第一硅晶片（1）中加工第一元件（3）或多个所述第一元件（3），以使所述元件（3）通过材料桥（5）连接在一起 ）; b）用第二硅晶片（2）重复步骤a），以便加工与第一元件（3）的形状不同的第二元件（4）或多个所述第二元件（4）; c）第一和第二元件（3,4）或第一和第二晶片（1,2）通过定位装置（6,7）面对面地施加; d）步骤c）中形成的组件经历氧化; 和e）部件（10）从晶片（1,2）分离。 根据工艺获得的微型钟表件。

公开(公告)号：US20090218312A1

公开(公告)日：2009-09-03

申请号：US12467942

申请日：2009-05-18

Applicant: Philip D. Floyd ,  William J. Cummings

Inventor： Philip D. Floyd ,  William J. Cummings

IPC: B44C1/22

CPC classification number: H01L21/3065 ,  B81B2201/047 ,  B81C1/00531 ,  B81C2201/0142 ,  B81C2201/056 ,  G02B26/001 ,  H01L21/32135 ,  H01L21/67069

Abstract: Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

Abstract translation: 本文提供了一种用于制造MEMS装置的装置和方法。 所公开的装置的一个方面提供了一种包括暴露于固态蚀刻剂的可蚀刻材料的衬底，其中衬底和固态蚀刻剂设置在蚀刻室中。 在一些实施例中，固态蚀刻剂移动到靠近基板的位置。 在其它实施例中，可配置的分隔件在基板之间并且打开固态蚀刻剂。 固态蚀刻剂形成适于蚀刻可蚀刻材料的气相蚀刻剂。 在一些优选的实施方案中，固态蚀刻剂是固体氙二氟化物。 该装置和方法有利地用于在光学调制器的制造中执行释放蚀刻。

公开(公告)号：US07056759B2

公开(公告)日：2006-06-06

申请号：US10833203

申请日：2004-04-27

Applicant: James R. Przybyla ,  Arthur R. Piehl

Inventor： James R. Przybyla ,  Arthur R. Piehl

IPC: H01L21/02

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81B2203/0163 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2201/056

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

公开(公告)号：US20050239231A1

公开(公告)日：2005-10-27

申请号：US10833203

申请日：2004-04-27

Applicant: James Przybyla ,  Arthur Piehl

Inventor： James Przybyla ,  Arthur Piehl

IPC: B81B3/00 ,  G11B5/48 ,  G11B21/16 ,  H01L21/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81B2203/0163 ,  B81C2201/0109 ,  B81C2201/053 ,  B81C2201/056

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract translation: 通过在位于衬底上的至少一个弯曲部分的一部分上建立挠曲保护层来制造微机电系统。 弯曲保护层被沉积成使得弯曲部分的一部分露出。 在挠曲接合元件和挠曲件的暴露部分之间建立接触。 在弯曲接合元件被图案化和蚀刻之后，剩余的挠曲保护层被去除。

公开(公告)号：US20040248417A1

公开(公告)日：2004-12-09

申请号：US10454198

申请日：2003-06-04

Applicant: Texas Instruments Incorporated

Inventor： Joshua J. Malone

IPC: H01L021/302

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US06737225B2

公开(公告)日：2004-05-18

申请号：US10034647

申请日：2001-12-28

Applicant: Seth Andrian Miller

Inventor： Seth Andrian Miller

IPC: G03F742

CPC classification number: B81C1/00476 ,  B81B3/0005 ,  B81C2201/056 ,  B81C2201/117 ,  G03F7/422

Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中，使用超临界二氧化碳与其它溶剂，共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点，包括可以减少可能损害自立微机械上层建筑的毛细管力的减少，灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。