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    SEMICONDUCTOR LASER
    61.
    发明申请
    SEMICONDUCTOR LASER 有权

    公开(公告)号：US20210281041A1

    公开(公告)日：2021-09-09

    申请号：US17261300

    申请日：2019-07-15

    Applicant: OSRAM OLED GmbH

    Inventor： Jörg Erich Sorg ,  Frank Singer ,  Christoph Koller

    IPC: H01S5/02255 ,  H01S5/02234 ,  H01S5/00 ,  H01S5/028 ,  H01S5/40 ,  H01S5/02216

    Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

    METHOD FOR CONTROLLING AN ILLUMINATION OF AN OBJECT, SYSTEM FOR CONTROLLING AN ILLUMINATION OF AN OBJECT, AND CAMERA
    63.
    发明申请
    METHOD FOR CONTROLLING AN ILLUMINATION OF AN OBJECT, SYSTEM FOR CONTROLLING AN ILLUMINATION OF AN OBJECT, AND CAMERA 有权

    公开(公告)号：US20210274083A1

    公开(公告)日：2021-09-02

    申请号：US17274048

    申请日：2019-09-10

    Applicant: OSRAM OLED GmbH

    Inventor： Stefan LORENZ

    IPC: H04N5/235 ,  H05B47/155 ,  H05B47/125

    Abstract: In at least one embodiment of the method for controlling an illumination of an object, the object is illuminated by a first radiation source during the method. A second radiation source is provided, the latter being configured to illuminate the object in addition to the first radiation source. The method comprises a step A), in which a first measurement signal is captured, wherein a change in the first measurement signal is representative for a change in a first radiation property of radiation striking the object. In a step B), the second radiation source is controlled, on the basis of a detected change in the first measurement signal, in such a way that the second radiation source illuminates the object and the change in the first radiation property of the radiation striking the object is counteracted.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING A FIRST AND A SECOND CURRENT SPREADING STRUCTURE
    65.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING A FIRST AND A SECOND CURRENT SPREADING STRUCTURE 有权

    公开(公告)号：US20210242367A1

    公开(公告)日：2021-08-05

    申请号：US17053800

    申请日：2019-05-08

    Applicant: Osram OLED GmbH

    Inventor： Michael VÖLKL ,  Siegfried HERRMANN

    IPC: H01L33/14 ,  H01L25/16 ,  H01L33/60 ,  H01L33/50

    Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

    METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE
    68.
    发明申请
    METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210175397A1

    公开(公告)日：2021-06-10

    申请号：US17181458

    申请日：2021-02-22

    Applicant: OSRAM OLED GmbH

    Inventor： Markus PINDL ,  Thomas SCHWARZ ,  Frank SINGER ,  Sandra SOBCZYK

    IPC: H01L33/54 ,  H01L33/50 ,  H01L33/00 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0203 ,  H01L33/48 ,  H01L21/56 ,  H01L33/56

    Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    69.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 有权

    公开(公告)号：US20210167251A1

    公开(公告)日：2021-06-03

    申请号：US17054488

    申请日：2019-05-03

    Applicant: OSRAM OLED GmbH

    Inventor： Stefan Heckelmann ,  Andreas Rudolph ,  Alexander Tonkikh

    IPC: H01L33/38 ,  H01L33/22 ,  H01L33/30 ,  H01L33/46

    Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 μm.

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