公开(公告)号：US20150147484A1

公开(公告)日：2015-05-28

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45553 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract translation: 提供沉积包含SiCN的膜的方法。 某些方法包括将衬底表面暴露于硅前体，其中硅前体用Cl，Br或I卤化，硅前体包含卤代硅烷，卤代碳硅烷，卤代氨基硅烷或卤代碳硅烷基胺。 然后，可以将衬底表面暴露于含氮等离子体或氮前体和致密化等离子体。

公开(公告)号：US12272551B2

公开(公告)日：2025-04-08

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US20250006485A1

公开(公告)日：2025-01-02

申请号：US18216286

申请日：2023-06-29

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

公开(公告)号：US20240355675A1

公开(公告)日：2024-10-24

申请号：US18630177

申请日：2024-04-09

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Bhaskar Jyoti Bhuyan ,  Xiangjin Xie ,  Michael Haverty ,  Kevin Kashefi ,  Mark Saly ,  Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  H01L21/76879

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule, such as a boron-containing compound, to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US12040427B2

公开(公告)日：2024-07-16

申请号：US17729690

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Mingwei Zhu

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L33/0093 ,  H01L2933/005

Abstract: Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features.

公开(公告)号：US12018363B2

公开(公告)日：2024-06-25

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC classification number: C23C16/303 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76837 ,  C23C16/45536 ,  C23C16/50

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US11932940B2

公开(公告)日：2024-03-19

申请号：US17096341

申请日：2020-11-12

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Cong Trinh ,  Mark Saly ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Lisa J. Enman

IPC: C23C16/34 ,  C08K5/5475 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C08K5/5475 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/76826

Abstract: Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

公开(公告)号：US20240052487A1

公开(公告)日：2024-02-15

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  H01L21/02175 ,  H01L21/0228 ,  C23C16/45527

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US20240027912A1

公开(公告)日：2024-01-25

申请号：US17872370

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: G03F7/40 ,  G03F7/34

CPC classification number: G03F7/40 ,  G03F7/346

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

公开(公告)号：US11866824B2

公开(公告)日：2024-01-09

申请号：US17941123

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly

IPC: C07F5/00 ,  C09D1/00 ,  C23C16/455 ,  C23C16/18 ,  C23C16/32 ,  C23C16/44 ,  C23C16/38 ,  C23C16/30 ,  C23C16/40 ,  C23C16/34 ,  C23C16/42 ,  C23C16/36 ,  C08F4/54 ,  C08F136/02

CPC classification number: C23C16/45553 ,  C07F5/003 ,  C08F4/545 ,  C09D1/00 ,  C23C16/18 ,  C23C16/308 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/38 ,  C23C16/40 ,  C23C16/42 ,  C23C16/4408 ,  C08F136/02

Abstract: Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g., atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.