Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"Ralf Otremba" Page 7

61.

发明申请
CIRCUIT ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
Title translation: 电路布置及其制造方法

公开(公告)号：US20140374913A1

公开(公告)日：2014-12-25

申请号：US13925900

申请日：2013-06-25

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba , Klaus Schiess , Anton Mauder

IPC: H01L25/18 , H01L25/00

CPC classification number: H01L23/3675 , H01L23/3107 , H01L23/4006 , H01L23/4093 , H01L23/49562 , H01L2224/06181 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/1431 , H05K1/0203 , H05K1/0265 , H05K1/0287 , H05K3/3447 , H05K2201/066 , H05K2201/09227 , H01L2924/00

Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a carrier having at least one electrically conductive line; a plurality of discrete encapsulated integrated circuits arranged on the carrier; wherein a first integrated circuit of the plurality of integrated circuits is in electrical contact with a second integrated circuit of the plurality of integrated circuits to form a first current path bypassing the carrier; and wherein the first integrated circuit of the plurality of integrated circuits is in electrical contact with the second integrated circuit of the plurality of integrated circuits to form a second current path via the at least one electrically conductive line.

Abstract translation: 各种实施例可以提供电路装置。电路装置可以包括具有至少一个导电线的载体; 布置在载体上的多个分立封装集成电路; 其中所述多个集成电路的第一集成电路与所述多个集成电路中的第二集成电路电接触以形成绕过所述载体的第一电流路径; 并且其中所述多个集成电路中的所述第一集成电路与所述多个集成电路中的所述第二集成电路电接触以形成经由所述至少一个导电线路的第二电流路径。

62.

发明申请
Semiconductor Device Having Sensing Functionality 有权
Title translation: 具有感应功能的半导体器件

公开(公告)号：US20140103902A1

公开(公告)日：2014-04-17

申请号：US13650023

申请日：2012-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Ralf Otremba , Marco Seibt

IPC: H01L23/544 , G01R19/00 , G01K7/01

CPC classification number: H01L23/34 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49568 , H01L24/73 , H01L25/072 , H01L25/18 , H01L2224/32225 , H01L2224/32245 , H01L2224/371 , H01L2224/37124 , H01L2224/37139 , H01L2224/37147 , H01L2224/40137 , H01L2224/40247 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/73263 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00012 , H01L2924/00

Abstract: A semiconductor package includes a power semiconductor chip having a control electrode, a first load electrode and a second load electrode. The package also includes a first terminal conductor electrically coupled to the control electrode, a second terminal conductor electrically coupled to the first load electrode and a third terminal conductor electrically coupled to the second load electrode. Further, the package includes a temperature sensor electrically coupled to at least two of the first, second and third terminal conductor.

Abstract translation: 半导体封装包括具有控制电极，第一负载电极和第二负载电极的功率半导体芯片。封装还包括电耦合到控制电极的第一端子导体，电耦合到第一负载电极的第二端子导体和电耦合到第二负载电极的第三端子导体。此外，封装包括电耦合到第一，第二和第三端子导体中的至少两个的温度传感器。

63.

发明申请
Semiconductor Housing with Rear-Side Structuring 有权
Title translation: 具有后端结构的半导体外壳

公开(公告)号：US20140084449A1

公开(公告)日：2014-03-27

申请号：US14036110

申请日：2013-09-25

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba , Josef Hoeglauer , Xaver Schloegel , Juergen Schredl

IPC: H01L23/40 , H01L21/50

CPC classification number: H01L23/4006 , H01L21/50 , H01L23/49562 , H01L2924/0002 , H01L2924/00

Abstract: A semiconductor housing includes a fixing mechanism and at least one side having structurings. A method for producing a semiconductor device is provided in which a thermally conductive paste is applied on the at least one side of the semiconductor housing and/or of a heat sink. The semiconductor housing is fixed to the heat sink by means of the fixing mechanism. A pressure is exerted on the thermally conductive paste by means of the fixing mechanism and the thermally conductive paste is diverted by means of diversion channels depending on the pressure exerted.

Abstract translation: 半导体外壳包括固定机构和具有结构的至少一个侧面。提供一种制造半导体器件的方法，其中在半导体外壳和/或散热器的至少一侧上施加导热膏。半导体外壳借助固定机构固定在散热片上。通过固定机构对导热性浆料施加压力，导热膏根据所施加的压力利用引流通道而转向。

64.

发明授权
Semiconductor package system 有权

公开(公告)号：US10886186B2

公开(公告)日：2021-01-05

申请号：US16365837

申请日：2019-03-27

Applicant: Infineon Technologies AG

Inventor： Thorsten Scharf , Ralf Otremba , Thomas Bemmerl , Irmgard Escher-Poeppel , Martin Gruber , Michael Juerss , Thorsten Meyer , Xaver Schloegel

IPC: H01L23/053 , H01L23/08 , H01L23/00 , H01L23/40

Abstract: A semiconductor package system comprises a semiconductor package and a cap. The semiconductor package comprises a die pad, a chip mounted or arranged to a first main face of the die pad and an encapsulation body encapsulating the chip and the die pad. The cap covers at least partly an exposed second main face of the die pad. The cap comprises a cap body of an electrically insulating and thermally conductive material and a fastening system fastening the cap to the semiconductor package. The fastening system extends from the cap body towards the encapsulation body or along a side surface of the semiconductor package.

65.

发明申请
SOLDERING A CONDUCTOR TO AN ALUMINUM METALLIZATION 审中-公开

公开(公告)号：US20200219841A1

公开(公告)日：2020-07-09

申请号：US16820069

申请日：2020-03-16

Applicant: Infineon Technologies AG

Inventor： Edmund Riedl , Wu Hu Li , Alexander Heinrich , Ralf Otremba , Werner Reiss

IPC: H01L23/00 , H01L23/498 , B23K1/00 , B23K1/20 , B23K35/26 , B23K35/28

Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

66.

发明申请
Device Including a Semiconductor Chip Monolithically Integrated with a Driver Circuit in a Semiconductor Material 审中-公开

公开(公告)号：US20170317001A1

公开(公告)日：2017-11-02

申请号：US15646189

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Ralf Otremba , Klaus Schiess , Oliver Haeberlen , Matteo-Alessandro Kutschak

IPC: H01L23/31 , H01L23/14 , H01L23/495 , H01L25/10 , H01L23/00 , H01L23/538 , H01L21/48 , H01L21/56

Abstract: A device includes a driver circuit, a first semiconductor chip monolithically integrated with the driver circuit in a first semiconductor material, and a second semiconductor chip integrated in a second semiconductor material. The second semiconductor material is a compound semiconductor.