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公开(公告)号：US08278623B2
公开(公告)日：2012-10-02
申请号：US13006999
申请日：2011-01-14
Applicant: Mohammed Tahmassebpur
Inventor： Mohammed Tahmassebpur
CPC classification number: H01J37/09 , H01J37/28 , H01J2237/0835
Abstract: A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.
Abstract translation: 公开了一种用于改变真空室内孔径尺寸的新技术。 真空室内的驱动机构用于调节至少两个叶片之间的部分水平重叠，其中孔口的周边由所述叶片的边缘限定。 在一个实施例中，可变孔径机构包括附接到第一支撑件的第一和第二叶片，以及附接到第二支撑件的第三和第四叶片。 第一刀片在第一支撑件上的第二刀片上方垂直地间隔开; 第二支撑件，并且第四刀片在第二支撑件上的第三刀片上方垂直地间隔开。 在第一和第三叶片之间以及第四和第二叶片之间存在部分水平重叠，并且孔口具有由四个叶片的边缘限定的周长。 还公开了其他实施例。
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62.发明授权公开(公告)号：US08008631B2
公开(公告)日：2011-08-30
申请号：US12495050
申请日：2009-06-30
Applicant: Takahito Nakayama , Kenji Ohtoshi , Osamu Iizuka , Shunji Shinkawa
Inventor： Takahito Nakayama , Kenji Ohtoshi , Osamu Iizuka , Shunji Shinkawa
CPC classification number: H01J37/222 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/1472 , H01J37/3045 , H01J37/3174 , H01J2237/0455 , H01J2237/0835 , H01J2237/221 , H01J2237/226 , H01J2237/3175
Abstract: A method of acquiring an offset deflection amount for a shaped beam, includes forming reference images of first and second figures which can be shaped by first and second aperture plates placed on a lithography apparatus, and a reference image of a mark; forming first and second convolution reference images based on the reference images of the mark and of the first and second figures; scanning over the mark with charged particle beams shaped into the first and second figures to acquire optical images of the first and second figures; forming first and second convolution synthesis images based on the first convolution reference image and respectively the optical images of the first and second figures; and calculating an offset deflection amount for the charged particle beam shaped into the second figure to match reference positions of the first and second figures based on center-of-gravity positions of the first and second convolution synthesis images.
Abstract translation: 一种获取成形光束的偏移偏移量的方法，包括：形成可由放置在光刻设备上的第一和第二孔板形成的第一和第二图形的参考图像和标记的参考图像; 基于标记的参考图像和第一和第二图形形成第一和第二卷积参考图像; 在形成第一和第二图形的带电粒子束上扫描标记以获取第一和第二图形的光学图像; 基于第一卷积参考图像和第一和第二图形的光学图像分别形成第一和第二卷积合成图像; 以及基于所述第一和第二卷积合成图像的重心位置，计算形成所述第二图形的带电粒子束的偏移偏移量，以匹配所述第一和第二图形的参考位置。
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公开(公告)号：US20110186749A1
公开(公告)日：2011-08-04
申请号：US12848354
申请日：2010-08-02
Applicant: Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh
Inventor： Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh
IPC: H01J27/08
CPC classification number: H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
Abstract translation: 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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公开(公告)号：US07952083B2
公开(公告)日：2011-05-31
申请号：US12020150
申请日：2008-01-25
Applicant: Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
Inventor： Hiroyasu Shichi , Muneyuki Fukuda , Yoshinori Nakayama , Masaki Hasegawa , Satoshi Tomimatsu
IPC: G21K5/08
CPC classification number: H01J37/3056 , G01N1/32 , H01J27/10 , H01J37/09 , H01J2237/0458 , H01J2237/0835 , H01J2237/31745 , H01J2237/31749
Abstract: An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.
Abstract translation: 离子束系统包括保持样品的样品台，产生离子束的离子源，使得离子束沿着提取轴从离子源提取;照射光学系统，具有照射轴，沿着该离子束的离子束 照射到保持在样品台上的样品，以及带电粒子束观察系统，用于观察被照射的离子束加工的样品的表面。 离子束从离子源提取的提取轴和样品照射的照射轴相对于彼此倾斜。
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公开(公告)号：US20100320395A1
公开(公告)日：2010-12-23
申请号：US12776636
申请日：2010-05-10
Applicant: Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
Inventor： Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
CPC classification number: H01J37/08 , H01J27/205 , H01J2237/024 , H01J2237/082 , H01J2237/0835 , H01J2237/31701
Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.
Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。
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Patent Agency Ranking
公开(公告)号：US07838850B2
公开(公告)日：2010-11-23
申请号：US12059608
申请日：2008-03-31
Applicant: Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
Inventor： Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
IPC: G21K5/10
CPC classification number: H01J37/08 , H01J27/205 , H01J2237/024 , H01J2237/082 , H01J2237/0835 , H01J2237/31701
Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.
Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。
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公开(公告)号：US20100148089A1
公开(公告)日：2010-06-17
申请号：US12642161
申请日：2009-12-18
Applicant: Thomas Neil Horsky , John Noel Williams
Inventor： Thomas Neil Horsky , John Noel Williams
IPC: H01J27/20
CPC classification number: H01J37/3171 , C23C14/48 , H01J27/205 , H01J37/08 , H01J2237/047 , H01J2237/049 , H01J2237/063 , H01J2237/0812 , H01J2237/0815 , H01J2237/082 , H01J2237/083 , H01J2237/0835 , H01J2237/31701 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L21/2658 , H01L21/823814
Abstract: An ion source is disclosed incorporating various aspects of the invention including i) a vaporizer, ii) a vaporizer valve, iii) a gas feed, iv) an ionization chamber, v) an electron gun, vi) a cooled mounting frame, and vii) an ion exit aperture. The ion source includes means for introducing gaseous feed material into the ionization chamber, means for vaporizing solid feed materials and introducing their vapors into the ionization chamber, means for ionizing the introduced gaseous feed materials within the ionization chamber, and means for extracting the ions thus produced from an ion exit aperture adjacent to the ionization region. In addition, means for accelerating and focusing the exiting ions are provided. The vaporizer, vaporizer valve, gas feed, ionization chamber, electron gun, cooled mounting frame, and ion exit aperture are all integrated into a single assembly in preferred embodiments of the novel ion source.
Abstract translation: 公开了一种结合本发明的各个方面的离子源，包括：i）蒸发器，ii）蒸发器阀，iii）气体进料，iv）电离室，v）电子枪，vi）冷却的安装框架，vii ）离子出口孔。 离子源包括用于将气态原料引入电离室的装置，用于蒸发固体进料并将其蒸气引入电离室的装置，用于离子化电离室内引入的气体进料的装置，以及用于从离子化室 由邻近电离区的离子出口孔产生。 此外，提供了用于加速和聚焦离子的装置。 蒸发器，蒸发器阀，气体进料，电离室，电子枪，冷却的安装框架和离子出口孔都在新型离子源的优选实施例中集成到单个组件中。
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公开(公告)号：US07598499B2
公开(公告)日：2009-10-06
申请号：US11978661
申请日：2007-10-30
Applicant: Elmar Platzgummer
Inventor： Elmar Platzgummer
CPC classification number: H01J37/3007 , B82Y10/00 , B82Y40/00 , H01J37/02 , H01J37/045 , H01J37/09 , H01J37/3174 , H01J2237/022 , H01J2237/0435 , H01J2237/0451 , H01J2237/0453 , H01J2237/0458 , H01J2237/0835
Abstract: In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).
Abstract translation: 在粒子束投影处理装置中，使用投影系统（103）将图案定义装置（102）中呈现的图案成像到图像定义装置（102）的图像上，借助于能量带电粒子束（pb）照射目标（41） 目标（41）通过目标阶段保持在位置; 没有元件 - 除了目标本身 - 在投影系统的光学元件之后阻挡光束的路径。 为了减少从目标空间到投影系统的污染，在投影系统和目标台之间提供保护膜片（15），其具有围绕图案化梁的路径的中心孔，其中至少部分 限定中心孔的光阑在投影系统（103）之后位于无场空间内。
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公开(公告)号：US20090014667A1
公开(公告)日：2009-01-15
申请号：US12059608
申请日：2008-03-31
Applicant: Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
Inventor： Sami K. Hahto , Richard Goldberg , Edward McIntyre , Thomas N. Horsky
IPC: G21K5/10
CPC classification number: H01J37/08 , H01J27/205 , H01J2237/024 , H01J2237/082 , H01J2237/0835 , H01J2237/31701
Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.
Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。
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公开(公告)号：US20080099693A1
公开(公告)日：2008-05-01
申请号：US11978661
申请日：2007-10-30
Applicant: Elmar Platzgummer
Inventor： Elmar Platzgummer
IPC: G21K5/04
CPC classification number: H01J37/3007 , B82Y10/00 , B82Y40/00 , H01J37/02 , H01J37/045 , H01J37/09 , H01J37/3174 , H01J2237/022 , H01J2237/0435 , H01J2237/0451 , H01J2237/0453 , H01J2237/0458 , H01J2237/0835
Abstract: In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).
Abstract translation: 在粒子束投影处理装置中，使用投影系统（103）将图案定义装置（102）中呈现的图案成像到图像定义装置（102）的图像上，借助于能量带电粒子束（pb）照射目标（41） 目标（41）通过目标阶段保持在位置; 没有元件 - 除了目标本身 - 在投影系统的光学元件之后阻挡光束的路径。 为了减少从目标空间到投影系统的污染，在投影系统和目标台之间提供保护膜片（15），其具有围绕图案化梁的路径的中心孔，其中至少部分 限定中心孔的光阑在投影系统（103）之后位于无场空间内。
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