Method for fabricating a semiconductor test probe card space transformer
    64.
    发明授权
    Method for fabricating a semiconductor test probe card space transformer 有权
    制造半导体测试探针卡空间变压器的方法

    公开(公告)号:US08322020B2

    公开(公告)日:2012-12-04

    申请号:US13227580

    申请日:2011-09-08

    Abstract: A space transformer for a semiconductor test probe card and method of fabrication. The method may include depositing a first metal layer as a ground plane on a space transformer substrate having a plurality of first contact test pads defining a first pitch spacing, depositing a first dielectric layer on the ground plane, forming a plurality of second test contacts defining a second pitch spacing different than the first pitch spacing, and forming a plurality of redistribution leads on the first dielectric layer to electrically couple the first contact test pads to the second contact test pads. In some embodiments, the redistribution leads may be built directly on the space transformer substrate. The method may be used in one embodiment to remanufacture an existing space transformer to produce fine pitch test pads having a pitch spacing smaller than the original test pads.

    Abstract translation: 一种用于半导体测试探针卡的空间变压器及其制造方法。 该方法可以包括在具有限定第一间距间隔的多个第一接触测试焊盘的空间变压器基板上沉积第一金属层作为接地平面,在接地平面上沉积第一介电层,形成多个第二测试触点, 与所述第一间距间隔不同的第二间距间隔,以及在所述第一介电层上形成多个再分配引线,以将所述第一接触测试焊盘电耦合到所述第二接触测试焊盘。 在一些实施例中,再分配引线可以直接构建在空间变换器基板上。 该方法可以在一个实施例中用于重新制造现有空间变压器以产生具有小于原始测试焊盘的间距间距的细间距测试焊盘。

    Circuit board and manufacturing method thereof
    65.
    发明授权
    Circuit board and manufacturing method thereof 有权
    电路板及其制造方法

    公开(公告)号:US08309856B2

    公开(公告)日:2012-11-13

    申请号:US12264386

    申请日:2008-11-04

    Abstract: A circuit board and method of manufacturing a circuit board. The circuit board includes a substrate, a conductor layer formed on the substrate, and an insulation layer formed on the substrate and the conductor layer, the insulating layer having an opening with an undercut therein, the opening reaching the conductor layer. A metal layer is formed in the opening of the insulation layer and connected to the conductor layer, a solder layer formed in the opening of the insulation layer and outside of the opening; and an alloy layer formed in a boundary region between the metal layer and the solder layer in the opening. The alloy layer includes a metal of the metal layer and a composition of the solder layer, the alloy layer being more fragile than the metal layer and being formed in a position misaligned from an edge of the undercut of the opening formed on the insulation layer.

    Abstract translation: 一种电路板及其制造方法。 电路板包括基板,形成在基板上的导体层,以及形成在基板和导体层上的绝缘层,绝缘层具有开口,底部具有底切,开口到达导体层。 在绝缘层的开口部形成金属层,与导体层连接,在绝缘层的开口部和开口部的外侧形成有焊料层, 以及形成在开口中的金属层和焊料层之间的边界区域中的合金层。 合金层包括金属层的金属和焊料层的组成,合金层比金属层更脆弱,并且形成在与形成在绝缘层上的开口的底切的边缘不对准的位置。

    Process for fabricating circuit substrate
    66.
    发明授权
    Process for fabricating circuit substrate 有权
    制造电路基板的工艺

    公开(公告)号:US08302298B2

    公开(公告)日:2012-11-06

    申请号:US12835085

    申请日:2010-07-13

    Abstract: A process for fabricating a circuit substrate is provided. A patterned conductive layer having an inner pad is provided on a base layer, a dielectric layer is disposed on the base layer and covers the patterned conductive layer, and a covering layer is disposed on the dielectric layer. A part of the covering layer is removed by dry etching to form a first opening. A part of the dielectric layer exposed by the first opening is removed to form a dielectric opening exposing a part of the inner pad. A patterned mask having a second opening to expose a part of the inner pad is formed on the covering layer. A conductive structure including a conductive block filling the dielectric opening, an outer pad filling the first opening and a surplus layer filling the second opening is formed. Finally, the patterned mask, surplus layer and covering layer are removed.

    Abstract translation: 提供了一种用于制造电路基板的工艺。 具有内垫的图案化导电层设置在基底层上,电介质层设置在基底层上并覆盖图案化的导电层,并且覆盖层设置在电介质层上。 通过干蚀刻去除覆盖层的一部分以形成第一开口。 去除由第一开口暴露的电介质层的一部分,以形成暴露一部分内垫的电介质开口。 在覆盖层上形成具有第二开口以露出内部衬垫的一部分的图案化掩模。 形成包括填充电介质开口的导电块,填充第一开口的外垫和填充第二开口的剩余层的导电结构。 最后,去除图案化掩模,剩余层和覆盖层。

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