公开(公告)号：US10194226B2

公开(公告)日：2019-01-29

申请号：US15587535

申请日：2017-05-05

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  David Tumpold ,  Gueclue Onaran

IPC: H04R1/04 ,  H04R19/04 ,  H04R29/00 ,  G01N29/02 ,  G01N29/24 ,  H04R1/08

Abstract: A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.

公开(公告)号：US20190016588A1

公开(公告)日：2019-01-17

申请号：US16031722

申请日：2018-07-10

Applicant: Infineon Technologies AG

Inventor： Christian Bretthauer ,  Alfons Dehe ,  Alfred Sigl

IPC: B81B3/00 ,  H04R19/00 ,  H04R17/02 ,  H04R19/02 ,  H04R19/04 ,  B81B7/02 ,  B81C1/00

Abstract: In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.

公开(公告)号：US10138115B2

公开(公告)日：2018-11-27

申请号：US14452565

申请日：2014-08-06

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Alfons Dehe

IPC: B81B7/00

Abstract: A transducer structure is disclosed. The transducer structure may include a substrate with a MEMS structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the MEMS structure. The substrate may include an electric contact which is laterally displaced from the lid on the first side of the substrate and electrically coupled to the MEMS structure.

公开(公告)号：US20180255402A1

公开(公告)日：2018-09-06

申请号：US15446643

申请日：2017-03-01

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe

IPC: H04R19/04 ,  H04R19/02 ,  H04R19/00 ,  H04R7/04

CPC classification number: H04R19/04 ,  H04R7/04 ,  H04R19/005 ,  H04R19/02 ,  H04R2201/003 ,  H04R2499/11

Abstract: A capacitive MEMS device, a capacitive MEMS sound transducer, a method for forming a capacitive MEMS device and a method for operating a capacitive MEMS device are disclosed. In an embodiment the capacitive MEMS device includes a first electrode structure comprising a first conductive layer and a second electrode structure comprising a second conductive layer, wherein the second conductive layer at least partially opposes the first conductive layer, and wherein the second conductive layer includes a multiple segmentation which provides an electrical isolation between at least three portions of the second conductive layer.

公开(公告)号：US20180249258A1

公开(公告)日：2018-08-30

申请号：US15961416

申请日：2018-04-24

Applicant: Infineon Technologies AG

Inventor： Ulf Bartl ,  Alfons Dehe

IPC: H04R23/00 ,  G02B27/42 ,  B81C1/00 ,  G02B5/18 ,  H04R31/00

CPC classification number: H04R23/008 ,  B81B3/0083 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C1/00158 ,  G02B5/1814 ,  G02B27/4233 ,  H04R7/18 ,  H04R23/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021 ,  H04R2307/207

Abstract: According to an embodiment, an optical MEMS transducer includes a diffraction structure including alternating first reflective elements and openings arranged in a first plane, a reflection structure including second reflective elements and configured to deflect with respect to the diffraction structure, and an optical element configured to direct a first optical signal at the diffraction structure and the reflection structure and to receive a second optical signal from the diffraction structure and the reflection structure. The second reflective elements are arranged in the first plane when the reflection structure is at rest. Other embodiments include corresponding systems and apparatus, each configured to perform various embodiment methods.

公开(公告)号：US09986344B2

公开(公告)日：2018-05-29

申请号：US14934340

申请日：2015-11-06

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Andreas Froemel

IPC: H04R19/04 ,  H04R7/08 ,  H04R31/00 ,  H04R19/00 ,  B81B3/00 ,  H04R23/00 ,  H04R7/02 ,  B81C1/00

CPC classification number: H04R19/04 ,  B81B3/0021 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  H04R7/02 ,  H04R7/08 ,  H04R19/005 ,  H04R23/006 ,  H04R31/00 ,  H04R2201/003 ,  H04R2410/03

Abstract: A MEMS microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.

公开(公告)号：US09967679B2

公开(公告)日：2018-05-08

申请号：US14613106

申请日：2015-02-03

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Alfons Dehe

IPC: H04R23/00 ,  B81B7/02 ,  H04R17/02 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/01 ,  H04R19/02

CPC classification number: H04R23/00 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/015 ,  H04R17/02 ,  H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.

公开(公告)号：US09902612B2

公开(公告)日：2018-02-27

申请号：US15629834

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

公开(公告)号：US20170365507A1

公开(公告)日：2017-12-21

申请号：US15630597

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Damian Sojka ,  Andre Schmenn ,  Carsten Ahrens

IPC: H01L21/762 ,  H01L23/60 ,  H01L21/764 ,  H02H9/04 ,  H01L27/02 ,  H01L23/00

CPC classification number: H01L21/76289 ,  B81C1/00119 ,  B81C1/00214 ,  B81C1/00404 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/0111 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0135 ,  B81C2201/016 ,  B81C2201/0198 ,  B81C2201/053 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/764 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/0288 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H02H9/046 ,  H03K17/545 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

公开(公告)号：US09816881B2

公开(公告)日：2017-11-14

申请号：US15225862

申请日：2016-08-02

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Christoph Glacer

IPC: G01L1/14 ,  G01L9/00 ,  G01R29/12

CPC classification number: G01L1/14 ,  G01L9/0042 ,  G01L9/0073 ,  G01R29/12

Abstract: A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. Alternatively, the suspended structure may be configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between the suspended structure and the carrier.