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    Methods of forming patterns, and methods of forming integrated circuits
    71.
    发明授权
    Methods of forming patterns, and methods of forming integrated circuits 有权
    形成图案的方法，以及形成集成电路的方法

    公开(公告)号：US08273647B2

    公开(公告)日：2012-09-25

    申请号：US13288609

    申请日：2011-11-03

    Applicant: Dan Millward ,  Scott E. Sills

    Inventor： Dan Millward ,  Scott E. Sills

    IPC: H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/0337 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/32139 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/78

    Abstract: Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

    Abstract translation: 一些实施方案包括通过利用嵌段共聚物组合物作为图案形成材料在衬底中形成图案的方法。 可以在衬底上形成嵌段共聚物组件，其中组件具有以两个或多个畴的图案排列的第一和第二子单元。 金属可以相对于第二子单元选择性地耦合到第一子单元，以形成含金属的区域和非含金属的区域的图案。 可以除去至少一些嵌段共聚物以形成对应于含金属的区域的图案化掩模。 由图案化掩模限定的图案可以用一个或多个蚀刻转移到基板中。 在一些实施例中，图案化可以用于形成集成电路，例如，电视线。

    METHOD OF FORMING PATTERN
    72.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20120238109A1

    公开(公告)日：2012-09-20

    申请号：US13429901

    申请日：2012-03-26

    Applicant: Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

    Inventor： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

    IPC: H01L21/312

    CPC classification number: G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

    Abstract: According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

    Abstract translation: 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

    Method of forming fine pattern using block copolymer
    73.
    发明授权
    Method of forming fine pattern using block copolymer 有权
    使用嵌段共聚物形成精细图案的方法

    公开(公告)号：US08263323B2

    公开(公告)日：2012-09-11

    申请号：US12591427

    申请日：2009-11-19

    Applicant: Dong Ki Yoon ,  Shi-yong Yi ,  Seok-hwan Oh ,  Kyoung-seon Kim ,  Sang Ouk Kim ,  Seung-hak Park

    Inventor： Dong Ki Yoon ,  Shi-yong Yi ,  Seok-hwan Oh ,  Kyoung-seon Kim ,  Sang Ouk Kim ,  Seung-hak Park

    IPC: G03F7/26

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/405 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139

    Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

    Abstract translation: 形成精细图案的方法包括在基板上形成有机引导层，在有机引导层上形成光致抗蚀剂图案，光致抗蚀剂图案包括暴露部分有机引导层的多个开口，在暴露的 有机引导层的部分和光致抗蚀剂图案上的材料层包括嵌段共聚物，并且通过将嵌段共聚物相分离成精细图案层来重排材料层，使得精细图案层包括多个第一嵌段和 以交替图案排列的多个第二块，多个第一块和多个第二块具有不同的嵌段共聚物的重复单元。

    Self-assembly of block copolymers on topographically patterned polymeric substrates
    76.
    发明授权
    Self-assembly of block copolymers on topographically patterned polymeric substrates 有权
    嵌段共聚物在地形图案聚合物基材上的自组装

    公开(公告)号：US08247033B2

    公开(公告)日：2012-08-21

    申请号：US12553484

    申请日：2009-09-03

    Applicant: Thomas P. Russell ,  Soojin Park ,  Dong Hyun Lee ,  Ting Xu

    Inventor： Thomas P. Russell ,  Soojin Park ,  Dong Hyun Lee ,  Ting Xu

    IPC: B05D5/00 ,  B05D3/00 ,  B23B5/24

    CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/24802 ,  Y10T428/249953

    Abstract: Highly-ordered block copolymer films are prepared by a method that includes forming a polymeric replica of a topographically patterned crystalline surface, forming a block copolymer film on the topographically patterned surface of the polymeric replica, and annealing the block copolymer film. The resulting structures can be used in a variety of different applications, including the fabrication of high density data storage media. The ability to use flexible polymers to form the polymeric replica facilitates industrial-scale processes utilizing the highly-ordered block copolymer films.

    Abstract translation: 通过一种方法制备高度有序的嵌段共聚物膜，该方法包括形成地形图案化的结晶表面的聚合物复合物，在聚合物复合体的地形图形表面上形成嵌段共聚物膜，并退火嵌段共聚物膜。 所得到的结构可以用于各种不同的应用，包括制造高密度数据存储介质。 使用柔性聚合物形成聚合物复制品的能力有助于利用高阶嵌段共聚物膜的工业规模工艺。

    SOLVENT ANNEALING BLOCK COPOLYMERS ON PATTERNED SUBSTRATES
    77.
    发明申请
    SOLVENT ANNEALING BLOCK COPOLYMERS ON PATTERNED SUBSTRATES 有权
    溶剂型退火嵌段共聚物在图案基板上的应用

    公开(公告)号：US20120202017A1

    公开(公告)日：2012-08-09

    申请号：US13367337

    申请日：2012-02-06

    Applicant: Paul F. NEALEY ,  Lei WAN

    Inventor： Paul F. NEALEY ,  Lei WAN

    IPC: B32B3/10 ,  B05D3/10 ,  B05D3/00 ,  B05D5/00

    CPC classification number: G11B5/82 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  G11B5/855 ,  Y10T428/24802

    Abstract: Provided herein are block copolymer thin film structures and methods of fabrication. Aspects described herein include methods of directed self-assembly of block copolymers on patterns using solvent annealing, and the resulting thin films, structures, media or other compositions. According to various embodiments, solvent annealing is used direct the assembly of block copolymers on chemical patterns to achieve high degrees of pattern perfection, placement of features at the precision of the lithographic tool used to make the chemical pattern, improved dimensional control of features, improved line edge and line width roughness, and resolution enhancement by factors of two to four or greater.

    Abstract translation: 本文提供了嵌段共聚物薄膜结构和制造方法。 本文描述的方面包括使用溶剂退火在嵌段共聚物图案上自定义嵌段的方法，以及所得薄膜，结构，介质或其它组合物的方法。 根据各种实施方案，使用溶剂退火将嵌段共聚物的组装直接指向化学图案以获得高度的图案完美性，将特征放置在用于制备化学图案的光刻工具的精度上，改进特征的尺寸控制 线边缘和线宽粗糙度，分辨率增强因子为2到4或更大。

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