公开(公告)号：US07259373B2

公开(公告)日：2007-08-21

申请号：US11484015

申请日：2006-07-10

Applicant: Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

Inventor： Michael John Zani ,  Mark Joseph Bennahmias ,  Mark Anthony Mayse ,  Jeffrey Winfield Scott

IPC: G21K7/00

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：US20070164217A1

公开(公告)日：2007-07-19

申请号：US10585995

申请日：2005-01-13

Applicant: Erika Kanematsu

Inventor： Erika Kanematsu

IPC: G21K7/00

CPC classification number: H01J37/29 ,  H01J37/045 ,  H01J37/153 ,  H01J2237/1538 ,  H01J2237/24592

Abstract: The illuminating beam 4 emitted from the cathode 1 is incident on a deflector 3. In a state in which a voltage is applied to the deflector 3, the optical path of the illuminating beam 4 is altered by the deflector 3; the illuminating beam 4 then passes through a common electron optical system 7, and illuminates the surface of the sample 6. In cases where no voltage is applied to the deflector 3, the illuminating beam 4 passes directly through the deflector 3, and is absorbed by an electron absorbing plate 17. The illuminating beam 4 is attenuated when it passes through the common electron optical system 7, so that the energy of this beam 4 is close to 0 [eV] at the point in time at which the beam 4 reaches the surface of the sample 6. When the illuminating beam 4 is incident on the sample 6, reflected electrons 8 are generated from the sample 6. These reflected electrons 8 pass through the common electron optical system 7, and in a case where no voltage is applied to the deflector 3, these reflected electrons 8 pass through the image focusing electron optical system 9, so that the electrons are projected onto an MCP detector 10.

Abstract translation: 从阴极1发射的照明光束4入射到偏转器3上。 在向偏转器3施加电压的状态下，照明光束4的光路被偏转器3改变， 照明光束4然后通过公共电子光学系统7，照射样品6的表面。 在没有电压施加到偏转器3的情况下，照射光束4直接通过偏转器3，并被电子吸收板17吸收。 照明光束4在通过公共电子光学系统7时被衰减，使得光束4的能量在光束4到达样品6的表面的时间点接近0 [eV]。 当照射光束4入射到样品6上时，从样品6产生反射电子8。 这些反射电子8通过公共电子光学系统7，并且在没有电压施加到偏转器3的情况下，这些反射电子8通过图像聚焦电子光学系统9，使得电子投影到MCP 检测器10。

公开(公告)号：US20070045568A1

公开(公告)日：2007-03-01

申请号：US11161995

申请日：2005-08-25

Applicant: Jui-Fang Chen ,  Cheng-Hung Chang ,  Chung- Shih Shen ,  Chung-Jung Chen

Inventor： Jui-Fang Chen ,  Cheng-Hung Chang ,  Chung- Shih Shen ,  Chung-Jung Chen

IPC: H01J37/317 ,  H01J37/244

CPC classification number: H01J37/3171 ,  H01J37/045 ,  H01J2237/022 ,  H01J2237/24507 ,  H01J2237/24535

Abstract: A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.

Abstract translation: 提供了离子注入期间减少颗粒的方法。 该方法包括使用改进的法拉第标志，其包括其上具有射束冲击区的梁板，该射束板包括凹陷沟槽图案，离子束在其上来回扫描。 在质量分析器和半导体晶片之间的关闭位置，选自质量分析器的离子束被法拉第标志阻挡。 测量入射在梁板的射束区上的离子束的束流。 在束电流测量之后，去除法拉第标记，使得离子束照射在半导体晶片上。

公开(公告)号：US20050242303A1

公开(公告)日：2005-11-03

申请号：US11119514

申请日：2005-04-29

Applicant: Elmar Platzgummer

Inventor： Elmar Platzgummer

IPC: G03F7/20 ,  G21K1/08 ,  G21K5/10 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/045 ,  H01J37/3174 ,  H01J2237/31774

Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (b1) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

Abstract translation: 在用于粒子束曝光装置的图案定义装置中，多个消隐开口（910）被布置在由多个交错布线（b 1）组成的图案定义区域（bf）内，每个设置有消隐开口 由消隐信号（911）控制的偏转装置; 对于消隐开口的线，根据将线的消隐开口划分成若干组（g 4，g 5，g 6），每组的消隐开口的偏转装置被馈送到公共组消隐信号（ 911），并且每组一组的组消隐信号被馈送到消隐装置并且独立于同一行的其他组的组消隐信号连接到各个消隐开口。

公开(公告)号：US20050035300A1

公开(公告)日：2005-02-17

申请号：US10670328

申请日：2003-09-26

Applicant: Yuichi Iwasaki ,  Masato Muraki ,  Kenji Tamamori ,  Kouji Asano ,  Masayoshi Esashi ,  Yoshinori Nakayama ,  Shinichi Hashimoto ,  Yoshiaki Moro

Inventor： Yuichi Iwasaki ,  Masato Muraki ,  Kenji Tamamori ,  Kouji Asano ,  Masayoshi Esashi ,  Yoshinori Nakayama ,  Shinichi Hashimoto ,  Yoshiaki Moro

IPC: H01J37/147

CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J37/3174 ,  H01J2237/0437 ,  H01J2237/31774

Abstract: A deflector which deflects a charged particle beam includes a substrate having an opening through which the charged particle beam should pass, and a deflection electrode which is arranged in the opening to deflect the charged particle beam and has a first conductive member and second conductive member, which are formed by plating. The second conductive member is formed on the surface of the first conductive member and is made of a material that is more difficult to oxidize than the first conductive member. The first conductive member is made of a material having smaller residual stress than the second conductive member.

公开(公告)号：US06818911B2

公开(公告)日：2004-11-16

申请号：US10406274

申请日：2003-04-04

Applicant: Kenji Tamamori ,  Masato Muraki ,  Yuichi Iwasaki ,  Yoshinori Nakayama ,  Kouji Asano ,  Yoshiaki Moro ,  Masayoshi Esashi

Inventor： Kenji Tamamori ,  Masato Muraki ,  Yuichi Iwasaki ,  Yoshinori Nakayama ,  Kouji Asano ,  Yoshiaki Moro ,  Masayoshi Esashi

IPC: G21G500

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0435

Abstract: This invention provides a reliable blanking aperture array. An insulating layer and conductive layer are sequentially formed on the lower surface of a substrate. Then, a plurality of pairs of opposing trenches are formed in the substrate, and an insulating layer is formed on each of the side surfaces of the trenches by thermal oxidation. The conductive layer is exposed by etching the bottom of each trench. A conductive member is selectively grown in each trench using the conductive layer as a plating electrode to form a blanking electrode. An opening is formed between the opposing blanking electrodes.

Abstract translation: 本发明提供了可靠的消隐孔径阵列。 绝缘层和导电层依次形成在基板的下表面上。 然后，在衬底中形成多对相对的沟槽，并且通过热氧化在沟槽的每个侧表面上形成绝缘层。 通过蚀刻每个沟槽的底部来暴露导电层。 使用导电层作为电镀电极，在每个沟槽中选择性地生长导电构件以形成消隐电极。 在相对的消隐电极之间形成开口。

公开(公告)号：US20040169147A1

公开(公告)日：2004-09-02

申请号：US10787082

申请日：2004-02-27

Applicant: Canon Kabushiki Kaisha ,  Hitachi High-Technologies Corporation

Inventor： Haruhito Ono ,  Masatake Akaike ,  Kenji Tamamori ,  Futoshi Hirose ,  Yasushi Koyama ,  Atsunori Terasaki ,  Ken-ichi Nagae ,  Yoshinori Nakayama

IPC: H01J003/14

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0437

Abstract: A deflector which makes multilayered wiring possible and prevents contamination during the manufacture includes an electrode substrate (400) having a plurality of through holes, and an electrode pair made up of first and second electrodes which oppose the side walls of each through hole in order to control the locus of a charged particle beam passing through the through hole, and a wiring substrate (500) having connection wiring pads connected to the electrode pairs of the electrode substrate to individually apply voltages to the electrode pairs. This deflector is formed by bonding the electrode substrate and wiring substrate via the connection wiring pads of the wiring substrate.

Abstract translation: 可以制造多层布线并防止在制造过程中的污染的偏转器包括具有多个通孔的电极基板（400）和由与每个通孔的侧壁相对的第一和第二电极构成的电极对，以便 控制通过通孔的带电粒子束的轨迹;以及布线基板（500），其具有连接到电极基板的电极对的连接布线焊盘，以分别向电极对施加电压。 该偏转器是通过经布线基板的连接布线焊盘接合电极基板和布线基板而形成的。

公开(公告)号：US20030085355A1

公开(公告)日：2003-05-08

申请号：US10329409

申请日：2002-12-27

Applicant: NIKON CORPORATION

Inventor： Yoshiaki Kohama

IPC: H01J037/26

CPC classification number: H01J37/045 ,  G01N23/2251 ,  H01J37/26 ,  H01J37/265 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/0203 ,  H01J2237/1504 ,  H01J2237/151 ,  H01J2237/221 ,  H01J2237/2817

Abstract: An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of electron beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.

Abstract translation: 电子束装置防止运动停止或减速引起的剂量快速增加，并且当样本和电子束相对移动时，在用电子束照射样本时保护样本。 电子束源输出电子束。 测量每单位面积照射的电子束的剂量。 存储部分将每单位面积的预定剂量存储在样品的存储器中。 当每单位面积的测量剂量大于存储部分中存储的每单位面积的剂量时，检测器检测电子束的过度曝光。 控制器控制电子束源以减少电子束单位面积的剂量低于存储部分中存储的每单位面积的剂量。

公开(公告)号：US6064807A

公开(公告)日：2000-05-16

申请号：US653121

申请日：1996-05-24

Applicant: Soichiro Arai ,  Junichi Kai ,  Hiroshi Yasuda ,  Shunsuke Hueki ,  Yoshihisa Oae

Inventor： Soichiro Arai ,  Junichi Kai ,  Hiroshi Yasuda ,  Shunsuke Hueki ,  Yoshihisa Oae

IPC: G21K5/04 ,  G06F17/10 ,  G21C5/00 ,  H01L21/027

CPC classification number: H01J37/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/153 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/0435 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/20221

Abstract: The present invention relates to an exposure method of a multi-beam type in which a stage mounting a sample to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the sample by deflecting the charged-particle beams by a main deflector and a sub deflector. Patterns to be drawn are divided into pattern data on a cell stripe basis which corresponds to an area which can be exposed when the sub deflector scans the charged-particle beams one time. The pattern data on the cell stripe basis is stored into a memory. Then, position data indicative of cell stripes is stored, in an exposure sequence, together with address information concerning the memory in which the pattern data is stored. The deflection amount data relating to the main deflector and the sub deflector is calculated from the position data. Patterns are drawn on the wafer by using the pattern data and the deflection amount data.

Abstract translation: 本发明涉及一种多光束类型的曝光方法，其中安装要暴露的样品的载物台在第一方向上连续移动，并且带电粒子束被整体地形成期望的波束形状 ，并且其中通过由主偏转器和副偏转器偏转带电粒子束而在样品上形成图案。 要绘制的图案被划分为细胞条纹基础上的图形数据，其对应于当次偏转器一次扫描带电粒子束时可以暴露的区域。 基于单元条带的图案数据被存储到存储器中。 然后，指示单元条纹的位置数据与曝光图案数据的存储器的地址信息一起被存储在曝光序列中。 根据位置数据计算与主偏转器和副偏转器有关的偏转量数据。 通过使用图案数据和偏转量数据在晶片上绘制图案。

公开(公告)号：US5412218A

公开(公告)日：1995-05-02

申请号：US23983

申请日：1993-02-26

Applicant: Mark A. Gesley ,  David H. Colby

Inventor： Mark A. Gesley ,  David H. Colby

IPC: G03F7/20 ,  G21K5/04 ,  H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  H01L21/027 ,  H01J37/147

CPC classification number: H01J37/045

Abstract: Spurious electrodynamic effects are reduced or eliminated by the use of a mechanically compact, low capacitance, geometrically symmetric, differentially-driven blanker assembly. This eliminates the need for internal cables or SMA-type launchers and has a solid metal electromechanical contact to system ground.

Abstract translation: 通过使用机械紧凑的低电容，几何对称的差分驱动的阻断器组件来减少或消除杂散电动势效应。 这消除了对内部电缆或SMA型发射器的需要，并且具有与系统接地的实心金属机电接触。