公开(公告)号：US20160013083A1

公开(公告)日：2016-01-14

申请号：US14858422

申请日：2015-09-18

Applicant: Texas Instruments Incorporated

Inventor： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC: H01L21/677 ,  H01L29/66 ,  H01L29/423 ,  H01L21/324 ,  H01L29/51 ,  H01L29/49 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US20160013082A1

公开(公告)日：2016-01-14

申请号：US14858279

申请日：2015-09-18

Applicant: Texas Instruments Incorporated

Inventor： Malcolm J. Bevan ,  Haowen Bu ,  Hiroaki Niimi ,  Husam N. Alshareef

IPC: H01L21/677 ,  H01L29/51 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L21/28158 ,  C23C16/45557 ,  C23C16/4582 ,  H01J37/32752 ,  H01J37/32825 ,  H01J37/32899 ,  H01J2237/3321 ,  H01L21/02181 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6776 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/78

Abstract: Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

公开(公告)号：US09230834B2

公开(公告)日：2016-01-05

申请号：US13401617

申请日：2012-02-21

Applicant: Yoshiteru Fukutomi ,  Tsuyoshi Mitsuhashi ,  Hiroyuki Ogura ,  Kenya Morinishi ,  Yasuo Kawamatsu ,  Hiromichi Nagashima

Inventor： Yoshiteru Fukutomi ,  Tsuyoshi Mitsuhashi ,  Hiroyuki Ogura ,  Kenya Morinishi ,  Yasuo Kawamatsu ,  Hiromichi Nagashima

IPC: B05D3/12 ,  H01L21/677 ,  H01L21/67 ,  B05C13/00 ,  B05D3/04 ,  B05B15/12 ,  H01L23/34

CPC classification number: H01L21/67178 ,  B05B14/43 ,  B05B14/44 ,  B05C13/00 ,  B05C13/02 ,  B05D3/0486 ,  G03F7/26 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67225 ,  H01L23/34 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

Abstract: A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

Abstract translation: 用具有分度器部分，处理部分和界面部分的基板处理装置处理基板的基板处理方法包括在设置在处理部分中的多个故事层并行地进行抗蚀剂膜形成处理，并且在 在治疗部分设置多个故事。

公开(公告)号：US09230800B2

公开(公告)日：2016-01-05

申请号：US14231554

申请日：2014-03-31

Applicant: Novellus Systems, Inc.

Inventor： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/67 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

Abstract translation: 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US09224628B2

公开(公告)日：2015-12-29

申请号：US13625442

申请日：2012-09-24

Applicant: Brooks Automation, Inc.

Inventor： Michael L. Bufano ,  Ulysses Gilchrist ,  William Fosnight ,  Christopher Hofmeister ,  Daniel Babbs ,  Robert C. May

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67733 ,  H01L21/67017 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/67276 ,  H01L21/67376 ,  H01L21/67379 ,  H01L21/67386 ,  H01L21/677 ,  H01L21/67706 ,  H01L21/67715 ,  H01L21/67724 ,  H01L21/67727 ,  H01L21/6773 ,  H01L21/67736 ,  H01L21/67757 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/67772 ,  H01L21/67775

Abstract: In accordance with an exemplary embodiment a semiconductor workpiece processing system having at least one processing tool for processing semiconductor workpieces, a container for holding at least one semiconductor workpiece therein for transport to and from the at least one processing tool and a first transport section elongated and defining a travel direction. The first transport section has parts, that interface the container, supporting and transporting the container along the travel direction to and from the at least one processing tool. The container is in substantially continuous transport at a substantially constant rate in the travel direction, when supported by the first transport section. A second transport section is connected to the at least one process tool for transporting the container to and from the at least one processing tool.

Abstract translation: 根据示例性实施例，半导体工件处理系统具有至少一个用于处理半导体工件的处理工具，用于将至少一个半导体工件保持在其中以用于传送至至少一个处理工具和从该至少一个处理工具传送的容器和第一传送部分 定义旅行方向。 第一运输部分具有与集装箱接合的部件，沿着行进方向将容器支撑和运输到至少一个加工工具和从该至少一个加工工具运送。 当由第一输送部支撑时，容器以行进方向以基本上恒定的速度基本上连续输送。 第二传送部分连接到至少一个处理工具，用于将容器运送到至少一个处理工具和从该至少一个处理工具传送。

公开(公告)号：US09184055B2

公开(公告)日：2015-11-10

申请号：US14246952

申请日：2014-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/263 ,  H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20150273699A1

公开(公告)日：2015-10-01

申请号：US14670741

申请日：2015-03-27

Applicant: DAIHEN Corporation

Inventor： Hideki MATSUO

IPC: B25J11/00 ,  H01L21/677 ,  B25J15/00

CPC classification number: B25J11/0095 ,  B25J5/02 ,  B25J15/0014 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67706 ,  H01L21/67742 ,  H01L21/67748

Abstract: A conveying apparatus includes a guide mechanism and a moving body guided by the guide mechanism. The moving body includes a first support, a second support and a holding portion. The first support has a first engagement portion engaged with the guide mechanism. The first support, supported by the guide mechanism, is movable in a first direction. The second support has a second engagement portion engaged with the guide mechanism. The second support, supported by the guide mechanism, is movable in the first direction. The holding portion, supported by the first and the second supports, holds a workpiece. The first engagement portion receives a moment applied thereto by deformation of the moving body, where the moment is opposite in direction to a moment applied to the first engagement portion by a load of the workpiece held by the holding portion.

Abstract translation: 输送装置包括引导机构和由引导机构引导的移动体。 移动体包括第一支撑件，第二支撑件和保持部件。 第一支撑件具有与引导机构接合的第一接合部。 由引导机构支撑的第一支撑件可沿第一方向移动。 第二支撑件具有与引导机构接合的第二接合部。 由引导机构支撑的第二支撑件可沿第一方向移动。 由第一和第二支撑件支撑的保持部分保持工件。 第一接合部通过由保持部保持的工件的载荷，通过移动体的变形接收施加到其上的力矩，其中力矩相对于施加到第一接合部的力矩。

公开(公告)号：US20150235865A1

公开(公告)日：2015-08-20

申请号：US14703299

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/324 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。

公开(公告)号：US20150194327A1

公开(公告)日：2015-07-09

申请号：US14663548

申请日：2015-03-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Susumu Tauchi ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/67769 ,  Y10S414/139

Abstract: A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one.

Abstract translation: 半导体处理基板的真空处理系统和使用其的真空处理方法包括具有多个用于传送晶片的盒架的大气传送室，用于存储从大气传送室转移的晶片的锁定室，第一真空 传送室，来自锁定室的晶片被转印到该传送室，连接到第一真空传送室的传送中间室，连接到传送中间室的第二真空传送室，连接到第一真空传送室的至少一个真空处理室 以及连接到第二真空传送室的后侧的两个或更多个真空处理室，其中连接到第一真空传送室的真空处理室的数量小于连接到第二真空传送室的真空处理室的数量 ，或使用真空加工台数 连接到第一真空传送室的器件被限制为一个。

公开(公告)号：US09070715B2

公开(公告)日：2015-06-30

申请号：US13716972

申请日：2012-12-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwon Shin ,  Hyunju Kang ,  Sangwoo Sohn ,  Sukyoung Yang ,  Changoh Jeong

IPC: H01L23/34 ,  H01L29/66 ,  H01L21/324 ,  H01L21/67 ,  H01L21/677 ,  H01L27/12

CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67745 ,  H01L27/1262

Abstract: Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer.

Abstract translation: 提供了一种制造阵列基板的方法。 制造阵列基板的方法包括在基板上形成半导体层，形成与半导体层绝缘的栅电极，形成与栅电极绝缘并连接到半导体层的源电极和漏电极，并形成 像素电极连接到漏电极。 这里，形成栅电极，形成源电极和漏电极以及形成像素电极中的至少一个包括在衬底上形成导电层，将形成有导电层的衬底冷却到 温度不大于约0℃，加热冷却的基底，并图形化导电层。