公开(公告)号：US10804497B2

公开(公告)日：2020-10-13

申请号：US16087306

申请日：2017-03-20

Applicant: OSRAM OLED GmbH

Inventor： Daniel Riedel ,  Nina Riegel ,  Thomas Wehlus ,  Arne Fleissner ,  Armin Heinrichsdobler

IPC: H01L29/08 ,  H01L51/52

Abstract: An organic optoelectronic component includes an organic functional layer stack between a first electrode and a second electrode including a light-emitting layer formed to emit a radiation during operation of the component, and a coupling-out layer arranged above the first electrode and/or the second electrode which is in a beam path of the radiation of the light-emitting layer, wherein the coupling-out layer includes a structured layer and a planarization layer arranged thereabove and the structured layer has a structured surface structured at least in places, the planarization layer planarizes the structured surface of the structured layer, and a difference in the refractive indices of the structured layer and the planarization layer is smaller than 0.3 at least in places.

公开(公告)号：US20200303898A1

公开(公告)日：2020-09-24

申请号：US16890776

申请日：2020-06-02

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Loeffler

IPC: H01S5/06 ,  H01L33/50 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.

公开(公告)号：US10784421B2

公开(公告)日：2020-09-22

申请号：US16326731

申请日：2017-08-23

Applicant: OSRAM OLED GmbH

Inventor： Markus Boss ,  Tobias Gebuhr

IPC: H01L33/56 ,  H01L21/56 ,  H01L33/54 ,  H01L25/075 ,  H01L33/00

Abstract: A method of producing an optoelectronic component includes providing a carrier having an upper side; providing a mat configured as a fiber-matrix semifinished product and having a through-opening; arranging an optoelectronic semiconductor chip over the upper side of the carrier; arranging the mat over the upper side of the carrier such that the optoelectronic semiconductor chip is arranged in the opening of the mat; and compacting the mat to form a composite body including the mat and the optoelectronic semiconductor chip.

公开(公告)号：US10777713B2

公开(公告)日：2020-09-15

申请号：US16315020

申请日：2017-06-30

Applicant: OSRAM OLED GmbH

Inventor： Ivar Tangring

IPC: H01L33/50 ,  H01L33/60

Abstract: A method of producing an optoelectronic lighting device includes forming a volume emitter such that it is at least partly transmissive to generated electromagnetic radiation, forming a concavely formed, optically transparent frame element including a curable, flowable material including phosphor particles at a side region of the volume emitter, wherein forming a conversion layer that converts the electromagnetic radiation into a second wavelength range is carried out by a sedimentation process of phosphor particles, and the conversion layer is formed within an optically transparent frame element in a manner adjoining an optically active region, forming a reflection element on the optically transparent frame element, and forming a conversion element that converts the electromagnetic radiation into a second wavelength range, wherein the conversion element is formed in a manner overlapping at least a second surface of the volume emitter and frame element.

公开(公告)号：US10770506B2

公开(公告)日：2020-09-08

申请号：US15823431

申请日：2017-11-27

Applicant: OSRAM OLED GMBH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/075 ,  H01L29/66 ,  H01L29/78 ,  H01L33/12 ,  H01L33/50

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US10752836B2

公开(公告)日：2020-08-25

申请号：US15572449

申请日：2016-05-06

Applicant: OSRAM OLED GMBH

Inventor： Markus Seibald ,  Tim Fiedler ,  Dominik Baumann ,  Hubert Huppertz ,  Klaus Wurst ,  Gunter Heymann ,  Dominik Wilhelm

IPC: C09K11/77 ,  C09K11/08 ,  C01B21/06 ,  C04B35/581 ,  C04B35/626 ,  H01L33/50

Abstract: A phosphor is disclosed. In an embodiment the phosphor includes an inorganic compound having at least one activator E and N and/or O in its empirical formula, wherein E is selected from the group consisting of Mn, Cr, Ni, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Yb, Tm, Li, Na, K, Rb, Cs and combinations thereof, and wherein the inorganic compound crystallizes in a crystal structure with the same atomic sequence as in K2Zn6O7.

公开(公告)号：US20200266370A1

公开(公告)日：2020-08-20

申请号：US16868566

申请日：2020-05-07

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Wittmann ,  Arne Fleissner ,  Erwin Lang ,  Nina Riegel

IPC: H01L51/00 ,  H01L51/56 ,  H01L51/52

Abstract: In various aspects, an optoelectronic device is provided. The device may include a first substrate having a first non-planar shape, wherein the first substrate comprises a first shape memory material, a second substrate having a second non-planar shape, wherein the second substrate comprises a second shape memory material, and at least one optoelectronic component, arranged between the first substrate and the second substrate, wherein the first substrate is arranged in a coplanar or substantially coplanar manner with respect to the second substrate.

公开(公告)号：US10749055B2

公开(公告)日：2020-08-18

申请号：US16339582

申请日：2017-10-05

Applicant: OSRAM OLED GmbH

Inventor： Dirk Becker ,  Matthias Sperl

IPC: H01L31/18 ,  H01L25/16 ,  H01L31/0232 ,  H01L31/0203 ,  H01L31/02 ,  H01L31/167 ,  H01L33/62

Abstract: A method of producing sensors includes providing a carrier plate; arranging semiconductor chips on the carrier plate, wherein the semiconductor chips include at least radiation-detecting semiconductor chips; providing radiation-transmissive optical elements on the carrier plate provided with the semiconductor chips, wherein a plurality of radiation-transmissive optical elements are provided jointly on the carrier plate provided with the semiconductor chips; and singulating the carrier plate provided with the semiconductor chips and the radiation-transmissive optical elements, thereby forming separate sensors including a section of the carrier plate, at least one radiation-detecting semiconductor chip and at least one radiation-transmissive optical element.

公开(公告)号：US20200259052A1

公开(公告)日：2020-08-13

申请号：US16635470

申请日：2018-08-08

Applicant: OSRAM OLED GMBH

Inventor： Luca Haiberger ,  Sam Chou

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/58 ,  H01L33/60

Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

公开(公告)号：US20200235271A1

公开(公告)日：2020-07-23

申请号：US16639722

申请日：2018-07-23

Applicant: OSRAM OLED GmbH

Inventor： Paola Altieri-Weimar ,  Ingo Neudecker ,  Michael Zitzlsperger ,  Stefan Groetsch ,  Holger Klassen

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/00

Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.