公开(公告)号：US08845816B2

公开(公告)日：2014-09-30

申请号：US13408709

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  C23C16/44

CPC classification number: B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract translation: 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。

公开(公告)号：US08578879B2

公开(公告)日：2013-11-12

申请号：US12511377

申请日：2009-07-29

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01P7/04 ,  H01P7/06

CPC classification number: H01P7/04

Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Abstract translation: 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

公开(公告)号：US08562742B2

公开(公告)日：2013-10-22

申请号：US12907947

申请日：2010-10-19

Applicant: Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

Inventor： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

IPC: C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC classification number: H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68785 ,  Y10T137/6416 ,  Y10T137/8593

Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

Abstract translation: 本文提供了将气体输送到室的装置及其使用方法。 在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。

公开(公告)号：US20130087286A1

公开(公告)日：2013-04-11

申请号：US13629267

申请日：2012-09-27

Applicant: James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract translation: 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

公开(公告)号：US20120222699A1

公开(公告)日：2012-09-06

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B7/04 ,  B08B5/00

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供了从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US07988815B2

公开(公告)日：2011-08-02

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US07942967B2

公开(公告)日：2011-05-17

申请号：US11973100

申请日：2007-10-05

Applicant: Andrew Nguyen

Inventor： Andrew Nguyen

IPC: B05C11/00 ,  B05C11/02 ,  B05B1/28

CPC classification number: H01L21/6715 ,  B05D1/005 ,  B05D3/0486 ,  G03F7/162

Abstract: A method and apparatus of coating a polymer solution on a substrate such as a semiconductor wafer. The apparatus includes a coating chamber having a rotatable chuck to support a substrate to be coated with a polymer solution. A dispenser to dispense the polymer solution over the substrate extends into the coating chamber. A vapor distributor having a solvent vapor generator communicable with the coating chamber is included to cause a solvent to be transformed into a solvent vapor. A carrier gas is mixed with the solvent vapor to form a carrier-solvent vapor mixture. The carrier-solvent vapor mixture is flown into the coating chamber to saturate the coating chamber. A solvent remover communicable with the coating chamber is included to remove excess solvent that does not get transformed into the solvent vapor to prevent the excess solvent from dropping on the substrate.

Abstract translation: 一种在诸如半导体晶片的衬底上涂覆聚合物溶液的方法和设备。 该设备包括具有可旋转卡盘的涂覆室，以支撑待涂覆聚合物溶液的基材。 将聚合物溶液分配在基材上的分配器延伸到涂布室中。 包括具有与涂覆室可连通的溶剂蒸汽发生器的蒸气分配器，以使溶剂转化为溶剂蒸汽。 将载气与溶剂蒸气混合以形成载体 - 溶剂蒸气混合物。 载体 - 溶剂蒸气混合物流入涂覆室以使涂覆室饱和。 包括可与涂布室通信的溶剂去除剂以除去不被转化为溶剂蒸气的多余溶剂，以防止过量的溶剂滴落在基材上。

公开(公告)号：US07768765B2

公开(公告)日：2010-08-03

申请号：US11683994

申请日：2007-03-08

Applicant: Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

Inventor： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

IPC: H01T23/00

CPC classification number: H01L21/67109

Abstract: A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Abstract translation: 用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。 流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。 在一个版本中，频道翻倍翻转自己。

公开(公告)号：US07700465B2

公开(公告)日：2010-04-20

申请号：US10646533

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: H01L21/26

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32412

Abstract: A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.

Abstract translation: 用于将物种离子注入到室中的工件的表面层中的方法包括将工件放置在由室侧壁和面向所述工件的室顶部以及室的一对端口之间限定的室的处理区域中 靠近处理区域大致相对的两侧，并通过腔室外部的导管连接在一起。 该方法还包括向腔室内引入包括待注入物种的工艺气体，并且还从工艺气体中产生等离子体电流并使等离子体电流在包括导管和处理区域的循环折返路径中振荡。

公开(公告)号：US07666464B2

公开(公告)日：2010-02-23

申请号：US10971772

申请日：2004-10-23

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC: C23C14/48 ,  C23C14/54 ,  C23C16/52 ,  C23C16/505

CPC classification number: H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Abstract translation: 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， ，然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。