公开(公告)号：US20150325411A1

公开(公告)日：2015-11-12

申请号：US14703922

申请日：2015-05-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Huixiong DAI ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Nitin Krishnarao INGLE

IPC: H01J37/32

Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.

Abstract translation: 本公开的实施方案包括使用表面改性方法修饰基材的表面的装置和方法。 修饰基材的表面的方法通常包括通过使用一种或多种能量粒子束来改变基材表面上暴露的材料的一部分的物理或化学性质和/或再分布，同时衬底被布置 在粒子束修改装置内。 本公开的实施例还提供了表面修改过程，其包括一个或多个预修改处理步骤和/或一个或多个修改后处理步骤，其全部在一个处理系统内执行。

公开(公告)号：US20150079798A1

公开(公告)日：2015-03-19

申请号：US14029769

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/306

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Abstract translation: 提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。 在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺 在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。

公开(公告)号：US20140357083A1

公开(公告)日：2014-12-04

申请号：US14283694

申请日：2014-05-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Mang-Mang LING ,  Lina ZHU ,  Nancy FUNG ,  Kwang-Soo KIM ,  Sean S. KANG ,  Srinivas D. NEMANI

IPC: H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/31138 ,  B81C1/00031 ,  B81C2201/0149 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32139

Abstract: Embodiments of methods and an apparatus for utilizing a directed self-assembly (DSA) process on block copolymers (BCPs) to form a defect-free photoresist layer for feature transfer onto a substrate are provided. In one embodiment, a method for performing a dry development process includes transferring a substrate having a layer of block copolymers disposed thereon into an etching processing chamber, wherein at least a first type and a second type of polymers comprising the block copolymers are aggregated into a first group of regions and a second group of regions on the substrate, supplying an etching gas mixture including at least a carbon containing gas into the etching processing chamber, and predominately etching the second type of the polymers disposed on the second groups of regions on the substrate in the presence of the etching gas mixture.

Abstract translation: 提供了用于利用嵌段共聚物（BCP）上的定向自组装（DSA）工艺以形成用于将特征转移到衬底上的无缺陷光致抗蚀剂层的方法和装置的实施方案。 在一个实施方案中，用于进行干显影处理的方法包括将其上设置有嵌段共聚物层的基材转移到蚀刻处理室中，其中至少第一类型和第二类型的包含嵌段共聚物的聚合物聚集成 第一组区域和第二组区域，将至少包含含碳气体的蚀刻气体混合物供应到蚀刻处理室中，并且主要蚀刻位于第二组区域上的第二类聚合物 衬底在蚀刻气体混合物的存在下。

公开(公告)号：US20250163607A1

公开(公告)日：2025-05-22

申请号：US18516728

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Shekhar ATHANI ,  Rahul KOZHIKKALKANDI ,  Nithin ALEX ,  Adib KHAN ,  Qiwei LIANG ,  Lancelot HUANG ,  Junghoon KIM ,  Hyunjun KIM ,  Douglas A. BUCHBERGER, JR. ,  Vishwas Kumar PANDEY ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14

Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.

公开(公告)号：US20240393695A1

公开(公告)日：2024-11-28

申请号：US18792284

申请日：2024-08-01

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Srinivas D. NEMANI ,  Steven Hiloong WELCH ,  Mangesh Ashok BANGAR ,  Ellie Y. YIEH

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311

Abstract: A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

公开(公告)号：US20230122224A1

公开(公告)日：2023-04-20

申请号：US18072392

申请日：2022-11-30

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Andrew C. KUMMEL ,  James HUANG ,  Yunil CHO

IPC: C23C16/40 ,  C23C28/04 ,  C23C16/455

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US20220351969A1

公开(公告)日：2022-11-03

申请号：US17624174

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav Sridhar CITLA ,  Joshua Alan RUBNITZ ,  Jethro TANNOS ,  Srinivas D. NEMANI ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/505 ,  H01J37/32 ,  C23C16/30

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

公开(公告)号：US20220310776A1

公开(公告)日：2022-09-29

申请号：US17210130

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun WONG ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Tony P. CHIANG

IPC: H01L49/02 ,  C23C16/40 ,  C23C14/06 ,  C23C16/455 ,  C23C28/04

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.

公开(公告)号：US20220199414A1

公开(公告)日：2022-06-23

申请号：US17126797

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

IPC: H01L21/308 ,  H01L21/67 ,  G03F7/20

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.

公开(公告)号：US20220004104A1

公开(公告)日：2022-01-06

申请号：US17468536

申请日：2021-09-07

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/67 ,  G03F7/40 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.