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公开(公告)号：US20170113919A1
公开(公告)日：2017-04-27
申请号：US15291142
申请日：2016-10-12
Applicant: Robert Bosch GmbH
Inventor： Frank Reichenbach , Till Schade , Jochen Reinmuth , Philip Kappe , Alexander Ilin , Mawuli Ametowobla
CPC classification number: B81B7/0035 , B81B2201/0235 , B81C1/00182 , B81C1/00277 , B81C1/00293 , B81C1/00325 , B81C1/00666 , B81C2201/0132 , B81C2201/0143 , B81C2203/0109 , B81C2203/0145
Abstract: A method is provided for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or in the cap. The first pressure and/or the first chemical composition are adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or the cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for reducing local stresses occurring at a sealed access opening.
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公开(公告)号：US09630831B1
公开(公告)日：2017-04-25
申请号：US14883908
申请日：2015-10-15
Inventor： Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81C1/00238 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2201/0125 , B81C2201/0154 , B81C2201/019 , B81C2203/0118 , B81C2203/035 , B81C2203/0792
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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83.发明授权公开(公告)号：US09611136B2
公开(公告)日：2017-04-04
申请号：US15169368
申请日：2016-05-31
Applicant: Seiko Epson Corporation
Inventor： Satoru Tanaka
IPC: G01L9/00 , H01L21/00 , H05K7/02 , G01P15/08 , B81B3/00 , H01L23/00 , B81C1/00 , H01L23/528 , H01L21/762 , B81B7/00 , G01C19/5656
CPC classification number: B81B3/0072 , B81B3/0018 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2203/0118 , B81B2207/097 , B81C1/00158 , B81C2203/0109 , G01C19/5656 , G01L9/0042 , H01L21/76205 , H01L23/528 , H01L24/02 , H01L2224/0212 , H01L2924/15 , H01L2924/351
Abstract: A functional element includes a substrate which is provided with a concave section; a stationary section connected to a wall section that defines the concave section of the substrate; an elastic section which extends from the stationary section and is capable of stretching and contracting in a first axis direction; a movable body connected to the elastic section; a movable electrode section which extends from the movable body. The concave section includes a cutout section which is provided on the wall section. The stationary section includes an overlap section which is spaced with the substrate, and overlaps the concave section when seen in a plan view. At least a portion of the overlap section overlaps the cutout section when seen in the plan view, and the elastic section extends from the overlap section.
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公开(公告)号：US20170089941A1
公开(公告)日：2017-03-30
申请号：US15128096
申请日：2015-04-07
Inventor： TAKASHI IMANAKA , TAKANORI AOYAGI , TAKAMI ISHIDA , HIROYUKI AIZAWA
CPC classification number: G01P15/08 , B81B2201/0235 , B81B2203/0181 , B81B2203/053 , B81B2207/095 , B81B2207/096 , B81C1/00301 , G01P15/0802 , G01P15/123 , G01P15/125 , G01P15/18 , G01P2015/0831 , G01P2015/0837 , G01P2015/0871
Abstract: A sensor includes an upper lid layer, a lower lid layer, and a sensor layer disposed between the upper lid layer and the lower lid layer. One of the upper lid layer and the lower lid layer includes an insulative region mainly made of glass, a via-electrode covered with the insulative region, and an outer circumferential region mainly made of silicon and provided at an outer circumference of the insulative region. This sensor allows reducing outer dimensions of a wafer, which is a material for the sensor.
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公开(公告)号：US20170082519A1
公开(公告)日：2017-03-23
申请号：US15262156
申请日：2016-09-12
Applicant: MURATA MANUFACTURING CO., LTD.
Inventor： Anssi BLOMQVIST , Ville-Pekka RYTKÖNEN , Matii LIUKKU
IPC: G01M7/08
CPC classification number: G01M7/08 , B81B3/001 , B81B3/0013 , B81B7/0016 , B81B2201/0235 , B81C1/00968 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0874
Abstract: A microelectromechanical device includes a semi-flexible proof-mass comprising a primary part, a secondary part and a stiff spring suspending the primary part and the secondary part. The spring causes the parts to move as a single entity when the device is in its normal range. A first stopper structure stops the primary part. The proof-mass is configured to deform through deflection of the spring, when the device is subjected to a shock having a force that is beyond the normal operation range. While the shock causes motion of the proof-mass in one direction along an axis of movement, the spring is configured to cause a restoring force causing the secondary part of the proof-mass to be driven into a restoring motion in a direction opposite to motion along an axis caused by the shock. Momentum of the secondary part causes the primary part to dislodge from the first stopper structure.
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Patent Agency Ranking
公开(公告)号：US20170081181A1
公开(公告)日：2017-03-23
申请号：US14857687
申请日：2015-09-17
Applicant: InvenSense, Inc.
Inventor： Cerina ZHANG , Martin LIM
CPC classification number: B81C1/00333 , B81B3/0051 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , B81C2203/038
Abstract: A method for forming a MEMS device includes coupling a MEMS substrate and a base substrate. The MEMS substrate and the base substrate contain at least two enclosures. One enclosures has a first vertical gap between the bonding surface of the MEMS substrate and the bonding surface of the base substrate that is less than a second vertical gap between the bonding surface of the MEMS substrate and the bonding surface of the base substrate than another of the enclosures to provide a height difference between the first vertical gap and the second vertical gap. The method includes bonding the bonding surfaces of the one of the two enclosures at a first pressure to provide a first sealed enclosure. The method includes bonding the bonding surfaces of other of the two enclosures at a second pressure to provide a second sealed enclosure.
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公开(公告)号：US20170081180A1
公开(公告)日：2017-03-23
申请号：US15268017
申请日：2016-09-16
Applicant: Robert Bosch GmbH
Inventor： Johannes Classen
CPC classification number: B81C1/00238 , B81B7/007 , B81B2201/0235 , B81B2207/012 , B81B2207/07 , B81C2203/0109 , B81C2203/035 , B81C2203/0792 , G01P15/0802 , G01P15/125 , H01L2224/11
Abstract: A method for manufacturing a micromechanical component, including: providing a MEMS wafer; structuring the MEMS wafer proceeding from a surface of a second substrate layer of the MEMS wafer, at least one electrically conducting connection being formed between a first substrate layer and the second substrate layer of the MEMS wafer; providing a cap wafer; joining the MEMS wafer to the cap wafer; structuring the MEMS wafer proceeding from a surface of the first substrate layer of the MEMS wafer; providing an ASIC wafer; and joining the ASIC wafer to the joint of the MEMS wafer and the cap wafer.
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88.发明授权公开(公告)号：US09586815B2
公开(公告)日：2017-03-07
申请号：US14588983
申请日：2015-01-05
Applicant: Industrial Technology Research Institute
Inventor： Chung-Yuan Su , Chin-Fu Kuo , Tzung-Ching Lee , Chao-Ta Huang
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0127 , B81B2203/04 , B81C2203/0109
Abstract: A micro-electromechanical apparatus with multiple chambers and a method for manufacturing the same are provided, wherein various micro-electromechanical sensors are integrated into a single apparatus. For example, the micro-electromechanical apparatus in this disclosure may have two independent hermetically sealed chambers with different pressures, such that a micro-electromechanical barometer and a micro-electromechanical accelerometer can be operated in an optimal pressure circumstance.
Abstract translation: 提供具有多个室的微机电装置及其制造方法，其中各种微机电传感器集成到单个装置中。 例如，本公开中的微机电装置可以具有两个独立的密封室，其具有不同的压力，使得微机电气压计和微机电加速计可以在最佳压力环境中操作。
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89.发明授权公开(公告)号：US09586811B2
公开(公告)日：2017-03-07
申请号：US13157994
申请日：2011-06-10
Applicant: Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
Inventor： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
CPC classification number: B81B3/0005 , B81B3/001 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00579 , B81C2201/0111 , B81C2201/014 , B81C2201/0176 , B81C2203/0118 , B81C2203/019
Abstract: The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween.
Abstract translation: 本公开提供了微机电系统（MEMS）结构的实施例，所述MEMS结构包括MEMS基板; 设置在所述MEMS衬底上的半导体材料的第一和第二导电插塞，其中所述第一导电插头被配置用于电互连，所述第二导电插头被配置为抗静电凸块; 配置在所述MEMS基板上并与所述第一导电插塞电耦合的MEMS器件; 以及盖子衬底，其结合到MEMS衬底上，使得MEMS器件封装在其间。
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公开(公告)号：US09567207B2
公开(公告)日：2017-02-14
申请号：US14713287
申请日：2015-05-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Lee-Chuan Tseng , Chang-Ming Wu , Shih-Chang Liu
CPC classification number: B81B7/0041 , B81B7/02 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81C1/00293 , B81C2201/0112 , B81C2203/0145 , B81C2203/019 , B81C2203/0785
Abstract: An integrated circuit (IC) device is provided. The IC device includes a first substrate having a frontside and a backside. The backside includes a first cavity extending into the first substrate. A dielectric layer is disposed on the backside of the first substrate, and includes an opening corresponding to the first cavity and a trench extending laterally away from the opening and terminating at a gas inlet recess. A recess in the frontside of the first substrate extends downwardly from the frontside to the dielectric layer. The recess has substantially vertical upper sidewalls which adjoin lower sidewalls which taper inwardly from the substantially vertical sidewalls to points on the dielectric layer which circumscribe the gas inlet recess. A conformal sealant layer is arranged over the frontside of the first substrate, along the substantially vertical upper sidewalls, and along the lower sidewalls. The sealant layer hermetically seals the gas inlet recess.
Abstract translation: 提供集成电路（IC）装置。 IC器件包括具有前侧和后侧的第一基板。 背面包括延伸到第一基底中的第一腔。 电介质层设置在第一基板的背面，并且包括对应于第一空腔的开口和从开口横向延伸并终止于气体入口凹部的沟槽。 第一衬底的前侧的凹部从前侧向下延伸到电介质层。 凹部具有基本上垂直的上侧壁，其邻接下部侧壁，所述下侧壁从基本上垂直的侧壁向内逐渐向包围气体入口凹部的电介质层上的点倾斜。 共形密封剂层沿着基本垂直的上侧壁以及沿着下侧壁设置在第一基板的前侧上。 密封剂层密封气体入口凹部。
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