公开(公告)号：US09865422B2

公开(公告)日：2018-01-09

申请号：US14961021

申请日：2015-12-07

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Thomas N. Horsky ,  Sami K. Hahto

IPC: H01J27/02 ,  H01J27/20 ,  C23C14/48 ,  H01J37/00

CPC classification number: H01J27/205 ,  C23C14/48 ,  H01J27/022 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

公开(公告)号：US09852901B2

公开(公告)日：2017-12-26

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien Lavoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

公开(公告)号：US20170357157A1

公开(公告)日：2017-12-14

申请号：US15615348

申请日：2017-06-06

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  WEI ZHAO ,  XIAO-YANG LIN ,  DUAN-LIANG ZHOU ,  CHUN-HAI ZHANG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC: G03F7/20

CPC classification number: G03F7/2037 ,  G03F7/2059 ,  H01J37/00

Abstract: The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.

公开(公告)号：US09816946B2

公开(公告)日：2017-11-14

申请号：US13765022

申请日：2013-02-12

Applicant: Heiko Stegmann

Inventor： Heiko Stegmann

IPC: G01N23/04 ,  G01N1/28 ,  G01N1/44 ,  G01N1/04

CPC classification number: G01N23/04 ,  G01N1/286 ,  G01N1/32 ,  G01N2001/045 ,  G01N2001/2886 ,  H01J37/00 ,  H01J37/317 ,  H01J2237/206 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: Methods and apparatus are disclosed for the preparation of microscopic samples using light pulses. Material volumes greater than 100 μm3 are removed. The methods include inspecting an object with a scanning electron microscope (SEM) or a focused ion beam (FIB). The inspection includes recording an image of the object. The methods also includes delineating within the object a region to be investigated, and delineating a laser-machining path based on the image of the object so that a sample can be prepared out of the object. The methods further include using laser-machining along the delineated laser-machining path to remove a volume that is to be ablated, and inspecting the object with the scanning electron microscope (SEM) or a focused ion beam (FIB).

公开(公告)号：US20170259554A1

公开(公告)日：2017-09-14

申请号：US15438957

申请日：2017-02-22

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： Keith E. Whitener ,  Woo K. Lee ,  Jeremy T. Robinson ,  Nabil D. Bassim ,  Rhonda Michele Stroud ,  Paul E. Sheehan

IPC: B32B43/00 ,  B32B37/06 ,  B32B38/10

CPC classification number: B32B43/006 ,  B32B37/025 ,  B32B37/06 ,  B32B38/10 ,  B32B2038/0048 ,  B32B2313/04 ,  B32B2457/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/0484 ,  C01B32/354 ,  H01J37/00 ,  H01J37/20 ,  H01J37/26 ,  Y10S977/734 ,  Y10S977/891 ,  Y10S977/895 ,  Y10T156/11 ,  Y10T156/19

Abstract: A method of transferring functionalized graphene comprising the steps of providing graphene on a first substrate, functionalizing the graphene and forming functionalized graphene on the first substrate, delaminating the functionalized graphene from the first substrate, and applying the functionalized graphene to a second substrate.

公开(公告)号：US09617637B2

公开(公告)日：2017-04-11

申请号：US14331704

申请日：2014-07-15

Applicant: Lam Research Corporation

Inventor： Arul Dhas ,  Brannon Kelley ,  Jaswinder Guiliani ,  Akhil Singhal

IPC: C23C16/50 ,  H01J37/00 ,  H01L21/00 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/50 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/00 ,  H01L21/00

Abstract: Systems and methods for delivering liquid precursor in a substrate processing system include supplying liquid precursor using a first valve in fluid communication with a liquid precursor source; supplying purge gas using a second valve in fluid communication with a purge gas source; arranging a third valve having a first input port in fluid communication with an output port of the first valve and a second input port in fluid communication with an output port of the second valve; arranging an input port of a first divert injector valve in fluid communication with an output port of the third valve; and operating the first valve, the second valve, the third valve and the first divert injector valve in first, second, third and fourth modes.

公开(公告)号：US20170004971A1

公开(公告)日：2017-01-05

申请号：US15058183

申请日：2016-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choong-Yeol KIM ,  Myung-Beom PARK ,  Han-Gyul KO ,  Hwi-Hyeon OH ,  Hye-Young JIN

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/2658 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823814 ,  H01L29/0623 ,  H01L29/1083 ,  H01L29/66492 ,  H01L29/66575

Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Abstract translation: 在制造半导体器件的方法中，制备半导体衬底。 含硼的离子通过使硼烷类化合物和含卤素源彼此反应而产生。 基于硼烷的化合物包括质量数为11（11B）的硼。 将含硼离子注入到半导体衬底中以形成杂质区。

公开(公告)号：US20160372318A1

公开(公告)日：2016-12-22

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha VARADARAJAN ,  Shankar SWAMINATHAN ,  Saangrut SANGPLUNG ,  Frank PASQUALE ,  Ted MINSHALL ,  Adrien LAVOIE ,  Mohamed SABRI ,  Cody BARNETT

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

公开(公告)号：US20160351406A1

公开(公告)日：2016-12-01

申请号：US15166465

申请日：2016-05-27

Applicant: Tokyo Electron Limited

Inventor： Masayuki Sawataishi ,  Tomonori Miwa ,  Yuki Kaneko

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/31116 ,  H01J37/00 ,  H01J2237/334

Abstract: A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films are alternately stacked, and a second region including a single-layered silicon oxide film is provided. The etching method includes a first plasma process of generating plasma of a first processing gas containing a fluorocarbon gas and an oxygen gas within a processing vessel of a plasma processing apparatus; and a second plasma process of generating plasma of a second processing gas containing a hydrogen gas, nitrogen trifluoride gas and a carbon-containing gas within the processing vessel. A temperature of an electrostatic chuck is set to a first temperature in the first plasma process, and the temperature of the electrostatic chuck is set to a second temperature lower than the first temperature in the second plasma process.

Abstract translation: 提供包括蚀刻的多层膜，其中，第一电介质膜和作为氮化硅膜的第二介电膜被交替地堆叠的第一区域的方法，和包括一个单层的氧化硅膜的第二区域。 该蚀刻方法包括：生成含有碳氟化合物气体和等离子体处理装置的处理容器内的氧的气体的第一处理气体的等离子体的第一等离子体处理; 以及在处理容器内产生含有氢气，三氟化氮气体和含碳气体的第二处理气体的等离子体的第二等离子体工艺。 的静电吸盘的温度被设定为在第一等离子体工艺中的第一温度，和静电卡盘的温度设定到第二温度比在第二等离子体处理所述第一温度低。

公开(公告)号：US20160121028A1

公开(公告)日：2016-05-05

申请号：US14894088

申请日：2014-05-28

Applicant: LIFETECH SCIENTIFIC (SHENZHEN) CO., LTD.

Inventor： Deyuan ZHANG ,  Wenbin WANG ,  Ziqiang LIU

IPC: A61L31/02 ,  C23F1/00 ,  A61L31/16

CPC classification number: A61L31/022 ,  A61L31/148 ,  A61L31/16 ,  C23C8/02 ,  C23C8/26 ,  C23C8/38 ,  C23C8/80 ,  C23F1/00 ,  H01J37/00 ,  H01J2237/316

Abstract: Disclosed is a manufacturing method of an iron-based alloy medical apparatus, comprising: nitriding the iron-based alloy preformed unit at 350-550° C. for 30 100 minutes; and ion etching the iron-based alloy preformed unit with an ion etching time of 80-110% of the nitriding time, Ion nitriding and ion etching can be performed in situ in the same equipment using this manufacture method with high production efficiency, and in the ion nitriding and ion etching process, nitrogen atoms continuously permeate the preformed unit, making the time it takes for he medical apparatus to be absorbed by the human body and both the hardness and strength of the instrument surface achieve requirements.

Abstract translation: 本发明公开了一种铁基合金医疗装置的制造方法，其特征在于，在350〜550℃下将铁基合金预成型体氮化30分钟30分钟。 并且离子刻蚀时间为氮化时间的80-110％的离子蚀刻时间，可以在相同的设备中使用该生产效率高的制造方法在原位进行离子渗氮和离子蚀刻， 离子氮化和离子蚀刻过程中，氮原子连续渗透到预制单元中，使得医疗器械被人体吸收所需的时间，仪器表面的硬度和强度都达到要求。