CHARACTERIZATION OF SPECULAR SURFACES
    1.
    发明申请

    公开(公告)号:US20200320724A1

    公开(公告)日:2020-10-08

    申请号:US16848623

    申请日:2020-04-14

    Abstract: The present subject matter at-least provides a system for measurement of topography of specular surfaces. The system comprises a set of indexed light-sources and a controller configured to drive the set of light-sources for irradiating a specular-surface by sequentially illuminating a plurality of sub-sets of the light-sources in accordance with a pre-defined encoding criteria. Further, at least one camera is provided to capture reflected light-radiation from the specular-surface and thereby generate a plurality of images in accordance with the sequential-illumination, such that each of the generated-image corresponds to a particular sub-set of illuminated light sources. Further, a processing system is configured to process each generated image in accordance with an image-processing criteria specific to the encoding-criteria to determine one or more index of light-sources and thereby identify the light-sources within the images; and determine topography of the specular-surface at-least based on calculation of spatial-coordinates and the determined identity of each light-source.

    NON-CONTACT MEASUREMENT OF A STRESS IN A FILM ON A SUBSTRATE

    公开(公告)号:US20200152783A1

    公开(公告)日:2020-05-14

    申请号:US16741628

    申请日:2020-01-13

    Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

    Non-contact measurement of a stress in a film on a substrate

    公开(公告)号:US10553623B2

    公开(公告)日:2020-02-04

    申请号:US15722645

    申请日:2017-10-02

    Abstract: A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

    Multi-probe gauge for slab characterization

    公开(公告)号:US10209058B1

    公开(公告)日:2019-02-19

    申请号:US15914445

    申请日:2018-03-07

    Abstract: The present subject matter at-least provides an apparatus for characterization of a slab of a material. The apparatus comprises a plurality of frequency-domain optical-coherence tomography (FD-OCT) probes configured for irradiating the slab of material at at-least one location, and detecting radiation reflected from the slab of material or transmitted there-through. Further, a centralized actuation-mechanism is connected to the plurality of OCT probes for simultaneously actuating one or more elements in each of said OCT probes to at-least cause a synchronized detection of the radiation from the slab of material. A spectral-analysis module is provided for analyzing at least an interference-pattern with respect to each of said OCT probes to thereby determine at least one of thickness and topography of the slab of the material.

    INSPECTING A SLAB OF MATERIAL
    5.
    发明申请

    公开(公告)号:US20190025041A1

    公开(公告)日:2019-01-24

    申请号:US16048712

    申请日:2018-07-30

    Abstract: A system for inspecting a slab of material may include a polarization maintaining single mode optical-fiber, a linearly polarized broadband light-source configured to emit a polarized-light over the optical fiber, a beam-assembly configured to receive the light over the optical fiber and direct the light toward a slab of material; a polarization-rotator for controlling polarization of the light directed to the slab of material from the beam-assembly; a computer-controlled etalon filter configured to receive the light over the optical fiber, filter the light, and direct the light over the optical fiber; and a computer-controlled spectrometer configured to receive the light over the optical fiber after the light has been filtered by the etalon filter and after the light has been reflected from or transmitted through the slab of material and spectrally analyze the light.

    Inspecting a multilayer sample
    6.
    发明授权

    公开(公告)号:US10113860B1

    公开(公告)日:2018-10-30

    申请号:US15486146

    申请日:2017-04-12

    Abstract: Inspecting a multilayer sample. In one example embodiment, a method may include receiving, at a beam splitter, light and splitting the light into first and second portions; combining, at the beam splitter, the first portion of the light after being reflected from a multilayer sample and the second portion of the light after being reflected from a reflector; receiving, at a computer-controlled system for analyzing Fabry-Perot fringes, the combined light and spectrally analyzing the combined light to determine a value of a total power impinging a slit of the system for analyzing Fabry-Perot fringes; determining an optical path difference (OPD); recording an interferogram that plots the value versus the OPD for the OPD; performing the previous acts of the method one or more additional times with a different OPD; and using the interferogram for each of the different OPDs to determine the thicknesses and order of the layers of the multilayer sample.

    Inspecting a slab of material
    7.
    发明授权

    公开(公告)号:US09915564B1

    公开(公告)日:2018-03-13

    申请号:US15410328

    申请日:2017-01-19

    Abstract: According to an aspect of one or more embodiments, a system for inspecting a slab of material may include a single mode optical fiber, a broadband light source configured to emit light over the optical fiber, a beam assembly configured to receive the light over the optical fiber and direct the light toward a slab of material, a computer-controlled etalon filter configured to receive the light over the optical fiber either before the light is directed toward the slab of material or after the light has been reflected from or transmitted through the slab of material, filter the light, and direct the light over the optical fiber, and a computer-controlled spectrometer configured to receive the light over the optical fiber after the light has been filtered by the etalon filter and after the light has been reflected from or transmitted through the slab of material and spectrally analyze the light.

    STRESS ANALYSIS OF SEMICONDUCTOR WAFERS
    8.
    发明申请
    STRESS ANALYSIS OF SEMICONDUCTOR WAFERS 审中-公开
    半导体波形的应力分析

    公开(公告)号:US20150323313A1

    公开(公告)日:2015-11-12

    申请号:US14705161

    申请日:2015-05-06

    Abstract: According to an aspect of an embodiment, a method may include measuring, based on interferometry, a film thickness of a surface film of a semiconductor wafer at a plurality of locations that are along a scanline of the wafer. The method may also include measuring, based on interferometry, a substrate thickness of a substrate of the semiconductor wafer at the plurality of locations. Moreover, the method may include measuring, based on an optical measurement technique, a curvature of the semiconductor wafer along the scanline. In addition, the method may include determining a stress of the surface film along the scanline based on the measured film thickness at the plurality of locations, based on the measured substrate thickness at the plurality of locations, and based on the measured curvature along the scanline.

    Abstract translation: 根据实施例的一个方面,一种方法可以包括基于干涉测量在沿着晶片的扫描线的多个位置处测量半导体晶片的表面膜的膜厚度。 该方法还可以包括基于干涉测量在多个位置处测量半导体晶片的衬底的衬底厚度。 此外,该方法可以包括基于光学测量技术测量沿着扫描线的半导体晶片的曲率。 此外,该方法可以包括基于在多个位置处测量的基板厚度,并且基于沿着扫描线的测量的曲率来确定基于在多个位置处测量的膜厚度沿着扫描线的表面膜的应力 。

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