ENCAPSULATION WAFER PROCESS
    1.
    发明申请
    ENCAPSULATION WAFER PROCESS 失效
    封装过程

    公开(公告)号:US20050227400A1

    公开(公告)日:2005-10-13

    申请号:US10708936

    申请日:2004-04-01

    CPC classification number: B81C1/00333 B81C2203/0118

    Abstract: A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

    Abstract translation: 一种处理晶片的方法,特别是在制造模具封装中配置成与器件晶片配合的盖晶片。 掩蔽层沉积在存在于晶片的相对表面上的氧化物层上,之后蚀刻掩模层以暴露下面的氧化物层的区域。 此后,在氧化物层的暴露区域上形成氧化物掩模,但是防止在被掩蔽层掩蔽的氧化物层的其它区域上形成氧化物掩模。 然后去除掩模层,并蚀刻氧化物层和晶片的下面的区域,以同时在晶片中产生通孔和凹槽。 然后去除氧化物掩模以允许盖晶片与器件晶片的匹配。

    Process for a monolithically-integrated micromachined sensor and circuit
    2.
    发明申请
    Process for a monolithically-integrated micromachined sensor and circuit 审中-公开
    单片集成微机械传感器和电路的工艺

    公开(公告)号:US20050064619A1

    公开(公告)日:2005-03-24

    申请号:US10955128

    申请日:2004-09-30

    Abstract: A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer. A special absorber is preferably fabricated on the diaphragm to promote efficient absorption of incoming infrared radiation.

    Abstract translation: 使用集成传感器技术的方法,其中微机械感测元件和信号处理电路组合在单个半导体衬底上以形成例如红外传感器。 该方法基于在电路制造过程完成之后修改CMOS工艺以产生改进的分层微加工构件,例如隔膜。 该方法通常需要通过处理步骤在衬底上形成电路器件,该步骤包括在衬底上形成多个电介质层和至少一个导电层。 电介质层包括在衬底的表面上的氧化物层和处于张力的至少两个电介质层,导电层位于两个电介质层之间。 然后将基板的表面干蚀刻以形成空腔并描绘膜片和围绕隔膜的框架。 干蚀刻步骤终止于氧化物层,使得隔膜包括电介质层和导电层。 优选地在隔膜上制造特殊的吸收体以促进进入的红外辐射的有效吸收。

    METHOD AND APPARATUS FOR TESTING AN INFRARED SENSOR
    3.
    发明申请
    METHOD AND APPARATUS FOR TESTING AN INFRARED SENSOR 失效
    用于测试红外传感器的方法和装置

    公开(公告)号:US20060131495A1

    公开(公告)日:2006-06-22

    申请号:US10905151

    申请日:2004-12-17

    CPC classification number: G01J5/12

    Abstract: A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.

    Abstract translation: 一种用于评估红外传感器对红外辐射的功能和灵敏度的方法和装置。 该方法和装置适于测试具有包含加热元件的振动膜和产生响应于温度的输出的换能器的红外传感器。 该方法需要将红外传感器放置在受控的环境中,然后将传感器的膜片暴露于不同的热辐射水平,以便获得不同输出电平的换能器的输出。 在没有将隔膜暴露于热辐射的情况下,流过不同输入电平的加热元件的电流,使得换能器的输出返回到使用热辐射获得的不同输出电平,可以计算输入电平之间的输入差 并用于评估传感器的功能和灵敏度。

    INFRARED SENSOR PACKAGE
    5.
    发明申请
    INFRARED SENSOR PACKAGE 有权
    红外传感器包装

    公开(公告)号:US20050017175A1

    公开(公告)日:2005-01-27

    申请号:US10710260

    申请日:2004-06-29

    Abstract: An optical sensor package with a substrate that supports a membrane carrying an optical sensor and through which radiation passes to impinge the sensor. The substrate has a first surface in which a cavity is defined, a second surface opposite the first surface, and a wall between the cavity and the second surface. The optical sensor is supported on the membrane, which is bonded to the substrate and spans the cavity in the substrate. A window is defined at the second surface of the substrate for enabling infrared radiation to pass through the wall of the substrate to the optical sensor.

    Abstract translation: 一种光学传感器封装,其具有支撑携带光学传感器并且辐射通过该膜以撞击传感器的膜的基板。 衬底具有其中限定空腔的第一表面,与第一表面相对的第二表面以及腔和第二表面之间的壁。 光学传感器被支撑在膜上,该膜结合到基底并跨越基底中的空腔。 窗口被限定在基板的第二表面上,以使得红外辐射能够通过基板的壁到达光学传感器。

    STACKED THERMOCOUPLE STRUCTURE AND SENSING DEVICES FORMED THEREWITH
    6.
    发明申请
    STACKED THERMOCOUPLE STRUCTURE AND SENSING DEVICES FORMED THEREWITH 审中-公开
    堆积的热电偶结构和传感装置

    公开(公告)号:US20050016576A1

    公开(公告)日:2005-01-27

    申请号:US10710250

    申请日:2004-06-29

    CPC classification number: G01K7/021

    Abstract: A thermocouple structure capable of providing a more compact thermopile-based thermal sensor. The thermocouple structure has a stacked configuration that includes a plurality of first conductors on a surface, a dielectric layer on each of the first conductors, and a plurality of second conductors on the dielectric layer and formed of a different material than the first conductors. Each first conductor has first and second ends, and each second conductor has a first end overlying and contacting the first end of one of the first conductors, and a second end overlying but separated from the second end of the first conductor by the dielectric layer. A plurality of third conductors electrically interconnect one of the second ends of the second conductors with one of the second ends of the first conductors. Each third conductors is thicker than the second conductors to promote the robustness of the connection.

    Abstract translation: 能够提供更紧凑的基于热电堆的热传感器的热电偶结构。 热电偶结构具有层叠结构,其包括表面上的多个第一导体,每个第一导体上的电介质层和介电层上的多个第二导体,并且由不同于第一导体的材料形成。 每个第一导体具有第一端和第二端,并且每个第二导体具有覆盖并接触第一导体中的一个的第一端的第一端,以及通过介电层覆盖但与第一导体的第二端分离的第二端。 多个第三导体将第二导体的第二端中的一个与第一导体的第二端之一电互连。 每个第三导体比第二导体厚,以促进连接的鲁棒性。

    Infrared temperature sensing device
    7.
    发明申请
    Infrared temperature sensing device 审中-公开
    红外测温装置

    公开(公告)号:US20060262829A1

    公开(公告)日:2006-11-23

    申请号:US11130978

    申请日:2005-05-17

    CPC classification number: G01J5/16

    Abstract: An infrared temperature sensing device is provided for sensing temperature of a target object. The sensing device includes a semiconductor substrate, a thermopile infrared sensor mounted to the substrate for sensing temperature of a remote target object, and temperature sensing circuitry mounted to the substrate. The temperature sensing circuitry generates a temperature dependent signal substantially linearly related to ambient temperature of the substrate. The sensing device further includes summing circuitry for generating a signal indicative of infrared sensed temperature as a function of the ambient temperature.

    Abstract translation: 提供一种用于感测目标物体的温度的红外温度检测装置。 感测装置包括半导体衬底,安装到衬底的热电堆红外传感器,用于感测远程目标物体的温度,以及安装到衬底的温度感测电路。 温度感测电路产生与衬底的环境温度基本线性相关的温度相关信号。 感测装置还包括用于产生指示作为环境温度的函数的红外感测温度的信号的求和电路。

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