ELECTROSTATIC CHUCK PEDESTAL HEATER FOR HIGH BOW WAFERS

    公开(公告)号:US20230352332A1

    公开(公告)日:2023-11-02

    申请号:US18138776

    申请日:2023-04-25

    CPC classification number: H01L21/6833 H05B3/283

    Abstract: An electrostatic chuck (ESC) pedestal heater that includes a pedestal body and a surface on the pedestal body for receiving a substrate such as a high bow wafer. An electrode is embedded in the pedestal body to selectively generate an electrostatic force. The ESC pedestal heater includes a substrate contact surface that is raised to a height above the surface on the pedestal body and includes an inner seal band, an intermediate seal band, and an outer seal band extending. In the substrate contact surface, main spokes are provided that extend outward from the inner seal band to the outer seal band, and ancillary spokes may be provided between the main spokes in the region between the intermediate and outer seal bands. Additionally, contact areas or dots are provided in the substrate contact surface in the spaces between the bands and spokes.

    METHODS AND APPARATUS FOR A SUSCEPTOR ASSEMBLY

    公开(公告)号:US20250079223A1

    公开(公告)日:2025-03-06

    申请号:US18817440

    申请日:2024-08-28

    Abstract: Various embodiments of the present technology may provide a susceptor assembly. The susceptor assembly may include a susceptor plate and a cap disposed on a surface of the susceptor plate. The cap may have electrodes embedded within it. The susceptor plate may have heating elements embedded within it. The cap may be separated from the susceptor plate by an air gap formed by a plurality of dielectric spacers. The plurality of dielectric spacers may be sized for minimal contact on the cap.

    METHODS AND APPARATUS IN-SITU MEASUREMENTS

    公开(公告)号:US20250034712A1

    公开(公告)日:2025-01-30

    申请号:US18782321

    申请日:2024-07-24

    Abstract: Various embodiments of the present technology may provide in-situ metrology. A system may include a first sensor embedded within a susceptor and flush with a top surface of the susceptor. The system may also include lift pin pads having a second sensor arranged to contact a lift pin. The system may also include a third sensor arranged outside of a reaction chamber and adjacent to a view port. The system may also include a processor to receive output signals from one or more of the sensors and use the output signals to determine a film thickness on a wafer.

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