公开(公告)号：US20190228942A1

公开(公告)日：2019-07-25

申请号：US16248384

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01J37/20 ,  H01L21/67

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20200251331A1

公开(公告)日：2020-08-06

申请号：US16849713

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Hansel LO ,  Christopher S. OLSEN ,  Eric Kihara SHONO ,  Johanes S. SWENBERG ,  Erika HANSEN ,  Taewan KIM ,  Lara HAWRYLCHAK

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.

公开(公告)号：US20200219703A1

公开(公告)日：2020-07-09

申请号：US16823936

申请日：2020-03-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20240360996A1

公开(公告)日：2024-10-31

申请号：US18139057

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC: F23D99/00 ,  C01B33/12 ,  H01L21/02

CPC classification number: F23D91/00 ,  C01B33/126 ,  H01L21/02164 ,  H01L21/0223 ,  F23D2900/14003

Abstract: Systems and methods for hydroxyl driven combustion include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20240360559A1

公开(公告)日：2024-10-31

申请号：US18139103

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45559 ,  C23C16/45517 ,  C23C16/45574 ,  C23C16/458

Abstract: A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20240242962A1

公开(公告)日：2024-07-18

申请号：US18153709

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Dimitrios PAVLOPOULOS ,  Hansel LO ,  Christopher S. OLSEN

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02164 ,  H01L21/02178 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/31111

Abstract: The present disclosure generally relate to semiconductor device fabrication, and more particularly, to methods of forming a bottom thick oxide layer in a high aspect ratio semiconductor structures. In certain embodiments, the method includes depositing a non-conformal oxide layer on in a feature on a substrate, performing an oxidation process to thermally grow an oxide layer beneath the deposited non-conformal oxide layer in the feature, and selectively stripping the non-conformal oxide layer to expose the thermally grown oxide layer.

公开(公告)号：US20210074505A1

公开(公告)日：2021-03-11

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20190228951A1

公开(公告)日：2019-07-25

申请号：US16230917

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Hansel LO ,  Eric Kihara SHONO ,  Hemantha RAJU

IPC: H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20250075321A1

公开(公告)日：2025-03-06

申请号：US18652608

申请日：2024-05-01

Applicant: Applied Materials, Inc.

Inventor： Fredrick FISHBURN ,  Hao ZHANG ,  Zhijun CHEN ,  Johanes SWENBERG ,  Christopher S. OLSEN ,  Hansel LO ,  Kristopher Mikael KOSKELA ,  Hoi-Sung CHUNG ,  Chang Seok KANG ,  Raghuveer Satya MAKALA

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/56

Abstract: A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.