公开(公告)号：US12012652B2

公开(公告)日：2024-06-18

申请号：US16395015

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yang Guo ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: H01J37/32 ,  C23C14/34 ,  C23C16/40 ,  C23C16/44 ,  C23C28/04 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/4402 ,  C23C14/34 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4409 ,  C23C28/042 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32871 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28568 ,  H01J2237/20235 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0228

Abstract: Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.

公开(公告)号：US11830710B2

公开(公告)日：2023-11-28

申请号：US17848573

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： John Joseph Mazzocco ,  Anantha K. Subramani ,  Yang Guo

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  C23C14/14 ,  H01J37/32 ,  C23C14/58 ,  H01L21/677

CPC classification number: H01J37/3411 ,  C23C14/14 ,  C23C14/3407 ,  C23C14/50 ,  C23C14/5853 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32899 ,  H01L21/67751 ,  H01J2237/332

Abstract: Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

公开(公告)号：US20220028710A1

公开(公告)日：2022-01-27

申请号：US16934227

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Yang Guo ,  Seyyed Abdolreza Fazeli ,  Nitin Pathak ,  Badri N. Ramamurthi ,  Kallol Bera ,  Xiaopu Li ,  Philip A. Kraus ,  Swaminathan T. Srinivasan

IPC: H01L21/67 ,  B65G47/90

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

公开(公告)号：US12170186B2

公开(公告)日：2024-12-17

申请号：US17721417

申请日：2022-04-15

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Chandrashekara Baginagere ,  Ramcharan Sundar ,  Yunho Kim ,  Rajasekhar Patibandla

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.

公开(公告)号：US20220307131A1

公开(公告)日：2022-09-29

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  C23C14/56

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

公开(公告)号：US20220056584A1

公开(公告)日：2022-02-24

申请号：US17001551

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Sumit Agarwal ,  Anantha K. Subramani ,  Yang Guo ,  Siva Chandrasekar

IPC: C23C16/52 ,  C23C16/455 ,  G06N20/00 ,  G06K9/62

Abstract: A method includes receiving one or more parameters associated with a plurality of metal plates. The method further includes determining, based on the one or more parameters, a plurality of predicted deformation values associated with the plurality of metal plates. Each of the plurality of predicted deformation values correspond to a corresponding metal plate of the plurality of metal plates. The method further includes causing, based on the plurality of predicted deformation values, the plurality of metal plates to be diffusion bonded to produce a bonded metal plate structure.

公开(公告)号：US20190352774A1

公开(公告)日：2019-11-21

申请号：US16395015

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yang Guo ,  Ashish Goel ,  Anantha Subramani ,  Philip Allan Kraus

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C14/34 ,  C23C28/04 ,  C23C16/40

Abstract: Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.

公开(公告)号：US11946140B2

公开(公告)日：2024-04-02

申请号：US17213908

申请日：2021-03-26

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Seyyed Abdolreza Fazeli ,  Yang Guo ,  Ramcharan Sundar ,  Arun Kumar Kotrappa ,  Steven Mosbrucker ,  Steven D. Marcus ,  Xinhai Han ,  Kesong Hu ,  Tianyang Li ,  Philip A. Kraus

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C14/564 ,  C23C16/45536 ,  C23C16/4586 ,  H01J37/32082

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

公开(公告)号：US20230282506A1

公开(公告)日：2023-09-07

申请号：US17685272

申请日：2022-03-02

Applicant: Applied Materials, Inc.

Inventor： Anantha Subramani ,  Yang Guo ,  Seyyed Fazeli ,  Ramcharan Sundar ,  Arun Kumar Kotrappa

IPC: H01L21/683 ,  H01J37/32 ,  C23C14/28 ,  C23C14/50

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  C23C14/28 ,  C23C14/505 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

Abstract: Embodiments disclosed herein include an electrostatic chuck. In an embodiment, the electrostatic chuck comprises a pedestal with a support surface for supporting a substrate and a second surface opposite from the support surface, and chucking electrode within the pedestal. In an embodiment, a biasing electrode is within the pedestal, and a heating element is within the pedestal. In an embodiment, the electrostatic chuck further comprises a shaft coupled to the second surface of the pedestal, and a rotation assembly coupled to the shaft to rotate the shaft and the pedestal.

公开(公告)号：US20230395356A1

公开(公告)日：2023-12-07

申请号：US17834278

申请日：2022-06-07

Applicant: Applied Materials, Inc.

Inventor： Anantha Subramani ,  Yang Guo ,  Seyyed Fazeli ,  Kelvin Chan ,  Chandrashekara Baginagere ,  Brian Alvarez ,  Philip Kraus

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32247 ,  C23C16/45536 ,  C23C16/4584 ,  H01J2237/162 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

Abstract: A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.