Abstract:
A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.
Abstract:
An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.
Abstract:
The present invention relates to a surface property measuring apparatus for a polishing pad used for polishing a substrate, such as a semiconductor wafer, a surface property measuring method for a polishing pad, and a surface property judging mehod for a polishing pad. The surface property measuring apparatus (30) includes: a light-emitting structure (32) configured to irradiate the polishing pad (2) with light from a plurality of directions as viewed from a polishing surface (2a) of the polishing pad (2); and a light-receiving structure (32) configured to receive reflected light traveling in a plurality of directions from the surface of the polishing pad (2).
Abstract:
A method of polishing a substrate is disclosed. The method includes irradiating the substrate with light; measuring intensity of the reflected light; producing spectral waveform representing relationship between relative reflectance and wavelength of the light; performing a Fourier transform process on the spectral waveform to determine a thickness of the film and a corresponding strength of frequency component; determining whether the determined thickness of the film is reliable or not by comparing the strength of frequency component with a threshold value; calculating a defective data rate representing a proportion of the number of unreliable measured values to the total number of measured values; and changing the threshold value based on the defective data rate.
Abstract:
A pad surface determining method that can appropriately determine a surface property of a polishing pad including a condition of recess (e.g., groove or hole) formed in a polishing surface of the polishing pad is disclosed. The pad surface determining method includes: irradiating a target area in the polishing surface with a plurality of lights from a plurality of light sources at different incident angles; receiving a plurality of reflected lights from the target area by an imaging device; generating a plurality of images corresponding to the different incident angles by the imaging device; and determining the surface property of the polishing pad based on at least one of the plurality of images.
Abstract:
A surface property measuring system capable of accurately measuring a surface property of a polishing pad without damaging the polishing pad and without reducing throughput of the entire polishing process is disclosed. The surface property measuring system includes: an optical measuring device configured to direct light to a polishing surface of a polishing pad when the polishing pad is rotating, and measure a surface property of the polishing pad based on reflected light from the polishing surface; a cover member disposed between the optical measuring device and the polishing pad; and a transparent-liquid supply line coupled to an inlet port provided in the cover member and configured to supply a transparent liquid onto the polishing pad through the inlet port. The cover member has a light transmissive portion on an optical path of the light and the reflected light.
Abstract:
A surface property judging method and a surface property judging system for a polishing pad capable of appropriately judging a surface property of the polishing pad are disclosed. The surface property judging method includes: rotating a polishing table together with a polishing pad which is supported by the polishing table; generating surface data by a surface data generator, the surface data containing a plurality of shape index values representing a surface property of the polishing pad; producing a histogram indicating a distribution of the plurality of shape index values based on the surface data; and judging the surface property of the polishing pad based on the histogram.
Abstract:
A polishing apparatus capable of accurately determining a service life of a light source, and further capable of accurately measuring a film thickness of a substrate, such as a wafer, without calibrating an optical film-thickness measuring device, is disclosed. The polishing apparatus includes: a light source configured to emit light; an illuminating fiber having a distal end arranged at a predetermined position in the polishing table, the illuminating fiber being coupled to the light source; a spectrometer configured to decompose reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths; a light-receiving fiber having a distal end arranged at the predetermined position in the polishing table, the light-receiving fiber being coupled to the spectrometer, a processor configured to determine a film thickness of the wafer based on a spectral waveform indicating a relationship between the intensity of the reflected light and wavelength; an internal optical fiber coupled to the light source; and an optical-path selecting mechanism configured to selectively couple either the light-receiving fiber or the internal optical fiber to the spectrometer.
Abstract:
A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.
Abstract:
A polishing apparatus that can improve an accuracy of position coordinates associated with a measured value of film thickness is disclosed. The polishing apparatus includes: a pad-thickness measuring device configured to measure a thickness of the polishing pad; an optical film-thickness measuring device configured to emit light obliquely to the substrate, and determine measured values of film thickness at measurement points; and a controller configured to associates the measured values of the film thickness with measurement coordinates indicating positions of the measurement points. The controller is configured to determine amount of movement of the measurement coordinates corresponding to a measured value of the thickness of the polishing pad based on correlation data indicating a relationship between the thickness of the polishing pad and the amount of movement of the measurement coordinates; and correct the measurement coordinates associated with the measured values of the film thickness based on the determined amount of movement of the measurement coordinates.