ELECTRON BEAM APPARATUS FOR INSPECTING A PATTERN ON A SAMPLE USING MULTIPLE ELECTRON BEAMS
    2.
    发明申请
    ELECTRON BEAM APPARATUS FOR INSPECTING A PATTERN ON A SAMPLE USING MULTIPLE ELECTRON BEAMS 审中-公开
    用于使用多个电子束检查样品中的图案的电子束装置

    公开(公告)号:US20140107959A1

    公开(公告)日:2014-04-17

    申请号:US14134236

    申请日:2013-12-19

    Abstract: An electron beam apparatus for inspecting a pattern on a sample using multiple electron beams includes a plurality of primary electro-optical systems and a plurality of secondary electro-optical systems associated with the respective primary electro-optical systems. The primary electro-optical systems are for irradiating multiple primary electron beams on a surface of the sample, and each includes an electron gun having an anode and an objective lens. The secondary electro-optical systems are for inducing secondary electrons emitted from a surface of the sample by irradiation of the primary electron beams. Detectors are each for detecting the secondary electrons and generating electric signals corresponding to the detected electrons. The anodes of the electron guns of the primary electro-optical systems comprise an anode substrate in common having multiple holes corresponding to the axes of the respective primary electro-optical systems. The anode substrate has metal coatings around the respective holes.

    Abstract translation: 用于使用多个电子束检查样品上的图案的电子束装置包括多个初级电光系统和与各个主电光系统相关联的多个次电光系统。 初级电光系统用于在样品的表面上照射多个一次电子束,并且每个包括具有阳极和物镜的电子枪。 次级电光系统用于通过照射一次电子束来诱导从样品表面发射的二次电子。 检测器各自用于检测二次电子并产生对应于检测到的电子的电信号。 初级电光学系统的电子枪的阳极包括共同的具有对应于各个主要电光学系统的轴的多个孔的阳极衬底。 阳极基板具有围绕相应孔的金属涂层。

    POLISHING METHOD AND POLISHING APPARATUS
    4.
    发明申请
    POLISHING METHOD AND POLISHING APPARATUS 有权
    抛光方法和抛光装置

    公开(公告)号:US20140323016A1

    公开(公告)日:2014-10-30

    申请号:US14260229

    申请日:2014-04-23

    Inventor: Toshifumi KIMBA

    CPC classification number: B24B37/013 B24B49/12 H01L21/30625

    Abstract: A method of polishing a substrate is disclosed. The method includes irradiating the substrate with light; measuring intensity of the reflected light; producing spectral waveform representing relationship between relative reflectance and wavelength of the light; performing a Fourier transform process on the spectral waveform to determine a thickness of the film and a corresponding strength of frequency component; determining whether the determined thickness of the film is reliable or not by comparing the strength of frequency component with a threshold value; calculating a defective data rate representing a proportion of the number of unreliable measured values to the total number of measured values; and changing the threshold value based on the defective data rate.

    Abstract translation: 公开了抛光衬底的方法。 该方法包括用光照射基板; 测量反射光的强度; 产生表示光的相对反射率和波长之间的关系的光谱波形; 对光谱波形执行傅立叶变换处理以确定膜的厚度和相应的频率分量强度; 通过将频率分量的强度与阈值进行比较来确定所确定的胶片厚度是否可靠; 计算表示不可靠测量值的比例与测量值总数的不良数据速率; 以及基于所述有缺陷的数据速率来改变所述阈值。

    PAD SURFACE DETERMINING METHOD AND PAD SURFACE DETERMINING SYSTEM

    公开(公告)号:US20240338812A1

    公开(公告)日:2024-10-10

    申请号:US18624936

    申请日:2024-04-02

    Abstract: A pad surface determining method that can appropriately determine a surface property of a polishing pad including a condition of recess (e.g., groove or hole) formed in a polishing surface of the polishing pad is disclosed. The pad surface determining method includes: irradiating a target area in the polishing surface with a plurality of lights from a plurality of light sources at different incident angles; receiving a plurality of reflected lights from the target area by an imaging device; generating a plurality of images corresponding to the different incident angles by the imaging device; and determining the surface property of the polishing pad based on at least one of the plurality of images.

    SURFACE PROPERTY MEASURING SYSTEM, SURFACE PROPERTY MEASURING METHOD, POLISHING APPARATUS, AND POLISHING METHOD

    公开(公告)号:US20240075580A1

    公开(公告)日:2024-03-07

    申请号:US18137280

    申请日:2023-04-20

    CPC classification number: B24B37/013 B24B49/045 B24B49/08 B24B49/12

    Abstract: A surface property measuring system capable of accurately measuring a surface property of a polishing pad without damaging the polishing pad and without reducing throughput of the entire polishing process is disclosed. The surface property measuring system includes: an optical measuring device configured to direct light to a polishing surface of a polishing pad when the polishing pad is rotating, and measure a surface property of the polishing pad based on reflected light from the polishing surface; a cover member disposed between the optical measuring device and the polishing pad; and a transparent-liquid supply line coupled to an inlet port provided in the cover member and configured to supply a transparent liquid onto the polishing pad through the inlet port. The cover member has a light transmissive portion on an optical path of the light and the reflected light.

    SURFACE PROPERTY JUDGING METHOD AND SURFACE PROPERTY JUDGING SYSTEM

    公开(公告)号:US20240027190A1

    公开(公告)日:2024-01-25

    申请号:US18223360

    申请日:2023-07-18

    CPC classification number: G01B21/30 H01L22/12

    Abstract: A surface property judging method and a surface property judging system for a polishing pad capable of appropriately judging a surface property of the polishing pad are disclosed. The surface property judging method includes: rotating a polishing table together with a polishing pad which is supported by the polishing table; generating surface data by a surface data generator, the surface data containing a plurality of shape index values representing a surface property of the polishing pad; producing a histogram indicating a distribution of the plurality of shape index values based on the surface data; and judging the surface property of the polishing pad based on the histogram.

    POLISHING APPARATUS AND POLISHING METHOD
    8.
    发明申请

    公开(公告)号:US20180339392A1

    公开(公告)日:2018-11-29

    申请号:US15979180

    申请日:2018-05-14

    Abstract: A polishing apparatus capable of accurately determining a service life of a light source, and further capable of accurately measuring a film thickness of a substrate, such as a wafer, without calibrating an optical film-thickness measuring device, is disclosed. The polishing apparatus includes: a light source configured to emit light; an illuminating fiber having a distal end arranged at a predetermined position in the polishing table, the illuminating fiber being coupled to the light source; a spectrometer configured to decompose reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths; a light-receiving fiber having a distal end arranged at the predetermined position in the polishing table, the light-receiving fiber being coupled to the spectrometer, a processor configured to determine a film thickness of the wafer based on a spectral waveform indicating a relationship between the intensity of the reflected light and wavelength; an internal optical fiber coupled to the light source; and an optical-path selecting mechanism configured to selectively couple either the light-receiving fiber or the internal optical fiber to the spectrometer.

    POLISHING METHOD AND POLISHING APPARATUS
    9.
    发明申请
    POLISHING METHOD AND POLISHING APPARATUS 有权
    抛光方法和抛光装置

    公开(公告)号:US20130109278A1

    公开(公告)日:2013-05-02

    申请号:US13658070

    申请日:2012-10-23

    Inventor: Toshifumi KIMBA

    Abstract: A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.

    Abstract translation: 一种抛光方法,其能够在抛光基板期间获得准确的硅层厚度,并且基于获得的硅层的厚度确定基板的精确抛光终点。 该方法包括:通过将测得的红外线强度除以预定参考强度来计算相对反射率; 产生表示红外线的相对反射率和波长之间的关系的光谱波形; 对光谱波形执行傅立叶变换处理,以确定硅层的厚度和相应的频率分量强度; 并且基于所确定的硅层的厚度达到预定目标值的时间点来确定衬底的抛光终点。

    POLISHING APPARATUS
    10.
    发明公开
    POLISHING APPARATUS 审中-公开

    公开(公告)号:US20240278378A1

    公开(公告)日:2024-08-22

    申请号:US18544073

    申请日:2023-12-18

    CPC classification number: B24B37/005 B24B37/20

    Abstract: A polishing apparatus that can improve an accuracy of position coordinates associated with a measured value of film thickness is disclosed. The polishing apparatus includes: a pad-thickness measuring device configured to measure a thickness of the polishing pad; an optical film-thickness measuring device configured to emit light obliquely to the substrate, and determine measured values of film thickness at measurement points; and a controller configured to associates the measured values of the film thickness with measurement coordinates indicating positions of the measurement points. The controller is configured to determine amount of movement of the measurement coordinates corresponding to a measured value of the thickness of the polishing pad based on correlation data indicating a relationship between the thickness of the polishing pad and the amount of movement of the measurement coordinates; and correct the measurement coordinates associated with the measured values of the film thickness based on the determined amount of movement of the measurement coordinates.

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