Apparatus for sensing
    1.
    发明授权
    Apparatus for sensing 有权
    感应装置

    公开(公告)号:US09587986B2

    公开(公告)日:2017-03-07

    申请号:US14906251

    申请日:2014-07-16

    Applicant: Emberion Oy

    Inventor: Alan Colli

    CPC classification number: G01J5/0837 G01J5/046 G01J5/34 G01J2005/0077

    Abstract: An apparatus comprising: a sensor (1) configured to sense electromagnetic radiation (15) wherein the sensor (1) comprises a sensing portion (3) comprising a pyroelectric material (4) configured to be responsive to incident electromagnetic radiation (15) and a transducing portion (7) configured to convert the response of the pyroelectric material (4) into an output signal; and at least one antenna (21) configured to direct the electromagnetic radiation (15) onto the sensor (1).

    Abstract translation: 一种装置,包括:传感器(1),其被配置为感测电磁辐射(15),其中所述传感器(1)包括感测部分(3),所述感测部分(3)包括被配置为响应入射电磁辐射(15)的热电材料(4) 转换部(7),被配置为将所述热电材料(4)的响应转换为输出信号; 以及配置成将电磁辐射(15)引导到传感器(1)上的至少一个天线(21)。

    Apparatus and associated methods for reducing noise in photodetectors

    公开(公告)号:US10727361B2

    公开(公告)日:2020-07-28

    申请号:US16096954

    申请日:2017-04-25

    Applicant: EMBERION OY

    Abstract: An apparatus configured to alternate the application of first and second gate voltages to a gate electrode of a photodetector. A first change in electrical current is relative to a predetermined measurement of electrical current taken at the first gate voltage in the absence of incident electromagnetic radiation, and a second change in electrical current is relative to a predetermined measurement of electrical current taken at the second gate voltage in the absence of the incident electromagnetic radiation. The photodetector comprises a channel, and source and drain electrodes configured to enable flow of electrical current through the channel. Quantum dots are configured to generate charge carriers on exposure to the incident electromagnetic radiation. The gate electrode is configured to generate an electric field upon the application of a gate voltage thereto, and process the signal to at least partially remove any changes in electrical current which are attributed to noise.

    Multispectral photodetector array

    公开(公告)号:US11852536B2

    公开(公告)日:2023-12-26

    申请号:US17283790

    申请日:2019-10-11

    Applicant: EMBERION OY

    CPC classification number: G01J3/36 G01J5/10 H01L27/14652 H01L31/18

    Abstract: A photodetector array comprising at least one first sensor and at least one second sensor on the horizontal surface of the array substrate. The at least one first sensor is sensitive to radiation in a first wavelength range which comprises long-wavelength infrared wavelengths, and the at least one second sensor is sensitive to radiation in a second wavelength range which comprises wavelengths shorter than long-wavelength infrared. The array substrate comprises a vertical cavity on its horizontal surface, and the first sensor comprises a layer of pyroelectric material (65) which extends horizontally across the vertical cavity in the first area. A first part of a layer of two-dimensional layered material at least partly covers the layer of pyroelectric material (65), and a second part of the layer of two-dimensional layered material at least partly covers the foundation of the second sensor.

    Photosensitive device with electric shutter

    公开(公告)号:US11069826B2

    公开(公告)日:2021-07-20

    申请号:US16361473

    申请日:2019-03-22

    Applicant: EMBERION OY

    Abstract: A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.

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