公开(公告)号：US10050173B2

公开(公告)日：2018-08-14

申请号：US15045273

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Kai-Shun Kang ,  Yu-Chen Kuo ,  Fei-Lung Lu ,  Teng-Hsien Lai

IPC: H01L33/22 ,  B28D5/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.

公开(公告)号：US20190312176A1

公开(公告)日：2019-10-10

申请号：US16443832

申请日：2019-06-17

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US10326047B2

公开(公告)日：2019-06-18

申请号：US15255161

申请日：2016-09-02

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US20170062653A1

公开(公告)日：2017-03-02

申请号：US15255161

申请日：2016-09-02

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L2933/0016

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。

公开(公告)号：US20160247985A1

公开(公告)日：2016-08-25

申请号：US15045273

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Kai-Shun Kang ,  Yu-Chen Kuo ,  Fei-Lung Lu ,  Teng-Hsien Lai

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/16

CPC classification number: H01L33/0095 ,  B28D5/0011 ,  H01L33/20 ,  H01L33/22

Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.

Abstract translation: 发光器件包括半导体发光单元和透光衬底。 透光基板包括具有两个长边和两个短边和侧面的上表面，并且半导体发光单元设置在上表面上。 侧表面包括两个第一表面，两个第二表面和粗糙的微结构。 每个第一表面连接到上表面的一个长边，并且每个第二表面连接到上表面的一个短边。 粗糙微结构形成在第一表面和第二表面上，每个第一表面上的粗糙微结构的覆盖率大于或等于每个第一表面上粗糙微结构的覆盖率 第二表面。 还提供了一种发光器件的制造方法。