公开(公告)号：US20150348748A1

公开(公告)日：2015-12-03

申请号：US14760259

申请日：2014-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yuzuru MIZUHARA ,  Miki ISAWA ,  Minoru YAMAZAKI ,  Hitoshi TAMURA ,  Hideyuki KAZUMI

IPC: H01J37/244 ,  H01J37/26 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/268 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/265 ,  H01J37/266 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/24564 ,  H01J2237/28 ,  H01J2237/2809

Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

Abstract translation: 本发明的目的是提供一种能够通过使用带电粒子束来测量样品表面的电位或检测由于样品充电而发生变化的装置状态的变化的补偿值的方法和装置， 通过测量由带电粒子束的照射引起的样品电位。 为了实现该目的，提供了一种方法和装置，其中从样品（23）发射的带电粒子束（2（a），2（b））由带电粒子偏转器（33）在某种状态下偏转 其中样品（23）被带电粒子束（1）照射，并且通过使用当时获得的信号来检测关于样品电位的信息。

公开(公告)号：US20160141151A1

公开(公告)日：2016-05-19

申请号：US14846739

申请日：2015-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Hitoshi TAMURA

IPC: H01J37/32 ,  H01P3/16

CPC classification number: H01J37/32229 ,  H01J37/02 ,  H01J37/32256 ,  H01J37/32293 ,  H01J37/32311 ,  H01P5/103

Abstract: Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller.

Abstract translation: 提供一种等离子体处理装置，包括：与真空容器连接的圆形波导，用于等离子体生成的电场的圆极化波通过该波导传播; 处理室，其设置在所述圆形波导的下方，形成有等离子体; 圆偏振波发生器，布置在波导中; 圆偏振波调节器，与圆偏振波发生器下方的圆形波导连接; 在圆偏振波调节器下面的圆偏振波检测器; 以及根据圆偏振波检测器的输出调节圆偏振波调节器的操作的控制器，其中圆偏振波调节器基于来自圆偏振波检测器的信号将电介质短截线的突起的长度调节到圆形波导中 控制器。

公开(公告)号：US20190006153A1

公开(公告)日：2019-01-03

申请号：US15562353

申请日：2017-01-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Nanako TAMARI ,  Hitoshi TAMURA ,  Naoki YASUI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.