CHARGED PARTICLE BEAM DEVICE AND ABERRATION CORRECTION METHOD FOR CHARGED PARTICLE BEAM DEVICE

    公开(公告)号:US20190214222A1

    公开(公告)日:2019-07-11

    申请号:US16325613

    申请日:2016-08-23

    Abstract: A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount.

    SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD

    公开(公告)号:US20180269032A1

    公开(公告)日:2018-09-20

    申请号:US15983346

    申请日:2018-05-18

    CPC classification number: H01J37/28 H01J2237/2803

    Abstract: A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided.

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