ELECTRONIC MICROSCOPE DEVICE
    1.
    发明申请

    公开(公告)号:US20210225608A1

    公开(公告)日:2021-07-22

    申请号:US15734367

    申请日:2018-06-14

    Abstract: In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

    CHARGED PARTICLE BEAM DEVICE
    2.
    发明申请

    公开(公告)号:US20220367147A1

    公开(公告)日:2022-11-17

    申请号:US17771551

    申请日:2020-10-06

    Abstract: A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

    OBSERVATION SYSTEM, OBSERVATION METHOD, AND PROGRAM

    公开(公告)号:US20230238210A1

    公开(公告)日:2023-07-27

    申请号:US18151530

    申请日:2023-01-09

    Abstract: The invention provides an observation system capable of observing a formation position of a target shape that cannot be directly irradiated with an electron beam. The observation system includes an electron microscope and a computer. The electron microscope is configured to irradiate, with an electron beam, a first surface position on a specimen, which is different from a formation position of a target shape on the specimen, detect predetermined electrons that are scattered in the specimen from the first surface position and that escape from the formation position of the target shape to an outside of the specimen, and output the predetermined electrons as a detection signal. The computer is configured to output one or more values related to the target shape based on the detection signal.

    PROCESSOR SYSTEM, SEMICONDUCTOR INSPECTION SYSTEM, AND PROGRAM

    公开(公告)号:US20230230886A1

    公开(公告)日:2023-07-20

    申请号:US18065698

    申请日:2022-12-14

    CPC classification number: H01L22/12 G06T7/50 G06T1/0007 G06T2207/30148

    Abstract: To provide a technique capable of quantitatively grasping a change in three-dimensional shape including a cross-sectional shape of a pattern within a surface of a wafer or between wafers in a non-destructive manner before cross-sectional observation. A processor system of a semiconductor inspection system acquires images captured by an electron microscope (SEM) for a sample (S102), calculates, for a reference region defined on a surface of the sample, first feature data corresponding to each of a plurality of locations in the reference region from the captured image (S103A), calculates a first statistical value based on the first feature data at the plurality of locations (S103B), calculates, for each of a plurality of evaluation regions defined as points or regions on the surface of the sample in correspondence with the reference region, second feature data corresponding to each of one or more locations in the evaluation region from the captured image, as feature data of the same type as the first feature data (S104A), and converts the second feature data using the first statistical value to obtain second feature data after conversion (S105).

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