公开(公告)号：US20140151551A1

公开(公告)日：2014-06-05

申请号：US13772929

申请日：2013-02-21

Applicant: KLA-Tencor Corporation

Inventor： Hong XIAO

IPC: H01J37/22

CPC classification number: H01J37/222 ,  G03F7/70625 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J2237/221 ,  H01J2237/24578

Abstract: One embodiment relates to a method of measuring a relative critical dimension (RCD) during electron beam inspection of a target substrate. A reference image is obtained. A region of interest is defined in the reference image. A target image is obtained using an electron beam imaging apparatus. The target and reference images are aligned, and the region of interest is located in the target image. Measurement is then made of the RCD within the region of interest in the target image. Another embodiment relates to a method of measuring a RCD which involves scanning along a scan length that is perpendicular to the RCD. Point RCDs along the scan length are measured. A filter is applied to the point RCDs, and an average of the point RCDs is computed. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及在目标衬底的电子束检查期间测量相对临界尺寸（RCD）的方法。 获得参考图像。 感兴趣区域在参考图像中定义。 使用电子束成像装置获得目标图像。 目标和参考图像对齐，感兴趣的区域位于目标图像中。 然后在目标图像中感兴趣区域内的RCD进行测量。 另一实施例涉及一种测量RCD的方法，该方法涉及沿垂直于RCD的扫描长度进行扫描。 测量沿着扫描长度的点RCD。 将滤波器应用于点RCD，并且计算点RCD的平均值。 还公开了其它实施例，方面和特征。

公开(公告)号：US20160116425A1

公开(公告)日：2016-04-28

申请号：US14919563

申请日：2015-10-21

Applicant: KLA-Tencor Corporation

Inventor： Harsh SINHA ,  Dmitry SPIVAK ,  Huina XU ,  Hong XIAO ,  Rohit BOTHRA

IPC: G01N23/225 ,  H01J37/20 ,  H01J37/28

CPC classification number: G01N23/2252 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/2806 ,  H01J2237/2807 ,  H01J2237/2817

Abstract: One embodiment relates to a method for automated review of defects detected in a defective die on the target substrate. The method includes: performing an automated review of the defects using an secondary electron microscope (SEM) so as to obtain electron-beam images of the defects; performing an automated classification of the defects into types based on morphology of the defects as determined from the electron-beam images; selecting defects of a specific type for automated energy-dispersive x-ray (EDX) review; and performing the automated EDX review on the defects of the specific type. In addition, automated techniques are disclosed for obtaining an accurate reference so as to improve the usefulness of the EDX results. Furthermore, an automated method of classifying the defects based on the EDX results is disclosed which provides a final pareto that combines both morphological and elemental information. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及一种用于自动检查在目标衬底上的缺陷管芯中检测到的缺陷的方法。 该方法包括：使用二次电子显微镜（SEM）对缺陷进行自动审查，以获得缺陷的电子束图像; 基于从电子束图像确定的缺陷的形态，将缺陷自动分类为类型; 选择特定类型的自动能量色散X射线（EDX）检查的缺陷; 并对特定类型的缺陷执行自动EDX审查。 此外，公开了用于获得精确参考以提高EDX结果的有用性的自动化技术。 此外，公开了一种基于EDX结果对缺陷进行分类的自动化方法，其提供结合形态和元素信息的最终帕累托。 还公开了其它实施例，方面和特征。

公开(公告)号：US20140319340A1

公开(公告)日：2014-10-30

申请号：US14230987

申请日：2014-03-31

Applicant: KLA-Tencor Corporation

Inventor： Hong XIAO ,  Ximan JIANG

IPC: G01N23/225

CPC classification number: G01N23/2251 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2804 ,  H01J2237/2817

Abstract: One embodiment relates to a method of detecting a buried defect in a target microscopic metal feature. An imaging apparatus is configured to impinge charged particles with a landing energy such that the charged particles, on average, reach a depth within the target microscopic metal feature. In addition, the imaging apparatus is configured to filter out secondary electrons and detect backscattered electrons. The imaging apparatus is then operated to collect the backscattered electrons emitted from the target microscopic metal feature due to impingement of the charged particles. A backscattered electron (BSE) image of the target microscopic metal feature is compared with the BSE image of a reference microscopic metal feature to detect and classify the buried defect. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及一种检测目标微观金属特征中的埋入缺陷的方法。 成像装置被配置为以带有电荷的颗粒撞击着陆能量，使得带电粒子平均达到目标微观金属特征内的深度。 此外，成像装置被配置为滤除二次电子并检测反向散射电子。 然后操作成像装置以收集由于带电粒子的撞击而从目标微观金属特征发射的背散射电子。 将目标微观金属特征的背散射电子（BSE）图像与参考微观金属特征的BSE图像进行比较，以检测和分类埋藏缺陷。 还公开了其它实施例，方面和特征。

公开(公告)号：US20130137193A1

公开(公告)日：2013-05-30

申请号：US13687244

申请日：2012-11-28

Applicant: Kla-Tencor Corporation

Inventor： Cecelia CAMPOCHIARO ,  Hong XIAO ,  Michael VAN RIET ,  Benjamin James Thomas CLARKE ,  Harsh SINHA

IPC: H01L21/66 ,  H01J37/28 ,  H01J37/31

CPC classification number: H01L22/20 ,  H01J37/28 ,  H01J37/31 ,  H01J2237/2817 ,  H01L22/12

Abstract: One embodiment relates to a method of preparation of a sample of a substrate for sub-surface review using a scanning electron microscope apparatus. A defect at a location indicated in a first results file is re-detected, and the location of the defect is marked with at least one discrete marking point having predetermined positioning relative to the location of the defect. The location of the defect may be determined relative to the design for the device, and a cut location and a cut angle may be determined in at least a partly-automated manner using that information. Another embodiment relates to a system for preparing a sample for sub-surface review. Another embodiment relates to a method for marking a defect for review on a target substrate. Other embodiments, aspects and feature are also disclosed.

Abstract translation: 一个实施方案涉及使用扫描电子显微镜装置制备用于亚表面评价的基材的样品的方法。 重新检测在第一结果文件中指示的位置处的缺陷，并且使用至少一个相对于缺陷的位置具有预定定位的离散标记点标记缺陷的位置。 可以相对于设备的设计来确定缺陷的位置，并且可以使用该信息至少部分自动化地确定切割位置和切割角度。 另一实施例涉及一种用于准备用于子表面检查的样品的系统。 另一实施例涉及用于在目标衬底上标记用于复查的缺陷的方法。 还公开了其它实施例，方面和特征。

公开(公告)号：US20150090877A1

公开(公告)日：2015-04-02

申请号：US14300631

申请日：2014-06-10

Applicant: KLA-Tencor Corporation

Inventor： Gary G. FAN ,  Kumar Raja GUVINDAN RAJU ,  Wade Lenn JENSEN ,  Hong XIAO ,  Lorraine Ellen YOUNG

IPC: H01J37/06 ,  G01N23/225

CPC classification number: H01J37/261 ,  G01N23/2251 ,  G01N2223/6116 ,  H01J37/222 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/24592 ,  H01J2237/30405

Abstract: One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及用于检查和/或审查的电子束装置。 电子源产生一次电子束，并且电子 - 光学系统将所述一次电子束形成并聚焦在由载物台保持的样品上。 检测系统检测来自所述样品的包含二次电子和反向散射电子的信号携带电子，并且图像处理系统处理来自所述检测系统的数据。 控制和协调电子光学系统，检测系统和图像处理系统的主机计算机系统。 图形用户界面显示参数空间，并提供用户选择和激活设备的操作参数。 另一实施例涉及使用电子束装置检测和/或检查缺陷的方法。 还公开了其它实施例，方面和特征。