公开(公告)号：US20180226309A1

公开(公告)日：2018-08-09

申请号：US15942911

申请日：2018-04-02

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/10 ,  H01L21/768 ,  H01L21/52 ,  H01L27/146 ,  H01L23/498 ,  H01L23/26 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US09966320B2

公开(公告)日：2018-05-08

申请号：US15270145

申请日：2016-09-20

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/02 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  H01L27/146 ,  B81C1/00 ,  H01L21/52

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US10315918B2

公开(公告)日：2019-06-11

申请号：US15227181

申请日：2016-08-03

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B81C1/00 ,  B05D5/06 ,  B81B7/00

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

公开(公告)号：US09132496B2

公开(公告)日：2015-09-15

申请号：US14468660

申请日：2014-08-26

Applicant: Raytheon Company

Inventor： Buu Q. Diep ,  Thomas A. Kocian ,  Roland W. Gooch

IPC: B23K31/02 ,  B23K1/20 ,  B23K1/00 ,  B23K1/008 ,  B23K3/047 ,  B23K3/08 ,  H01L21/67 ,  H01L23/00

CPC classification number: B23K1/206 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/20 ,  B23K1/203 ,  B23K3/047 ,  B23K3/08 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/67173 ,  H01L21/67207 ,  H01L24/27 ,  H01L24/29 ,  H01L24/742 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/2781 ,  H01L2224/27826 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/83013 ,  H01L2224/83201 ,  H01L2224/834 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2924/0105 ,  H01L2924/00

Abstract: In certain embodiments, a system includes a deposition system and a plasma/bonding system. The deposition system deposits a solder outwardly from a substrate of a number of substrates. The plasma/bonding system comprises a plasma system configured to plasma clean the substrate and a bonding system configured to bond the substrates. The plasma/bonding system at least reduces reoxidation of the solder. In certain embodiments, a method comprises depositing solder outwardly from a substrate, removing metal oxide from the substrate, and depositing a capping layer outwardly from the substrate to at least reduce reoxidation of the solder.

Abstract translation: 在某些实施例中，系统包括沉积系统和等离子/粘合系统。 沉积系统从许多基底的衬底向外沉积焊料。 等离子体/粘合系统包括构造成等离子体清洁基板的等离子体系统和被配置为结合基板的接合系统。 等离子体/粘合系统至少减少了焊料的再氧化。 在某些实施例中，一种方法包括从衬底向外沉积焊料，从衬底去除金属氧化物，以及从衬底向外沉积覆盖层以至少减少焊料的再氧化。

公开(公告)号：US20140053966A1

公开(公告)日：2014-02-27

申请号：US13688714

申请日：2012-11-29

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B05D5/06

CPC classification number: B81C1/00325 ,  B05D5/061 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/0118

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract translation: 提供了通过盖晶片的抗反射涂层引起的减少晶片弓的方法。 该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。 该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。

公开(公告)号：US09427776B2

公开(公告)日：2016-08-30

申请号：US13688714

申请日：2012-11-29

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B05D5/06 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00325 ,  B05D5/061 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/0118

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract translation: 提供了通过盖晶片的抗反射涂层引起的减少晶片弓的方法。 该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。 该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。

公开(公告)号：US20150321905A1

公开(公告)日：2015-11-12

申请号：US14270945

申请日：2014-05-06

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

IPC: B81B7/00 ,  H01L37/00

CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when. the cover wafer is bonded to the device wafer.

Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当从盖玻片的透明区域的相对表面以小于预定波长的一小部分的距离来支撑感测元件的表面时。 盖晶片被结合到器件晶片。

公开(公告)号：US10262913B2

公开(公告)日：2019-04-16

申请号：US15942911

申请日：2018-04-02

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  H01L27/146 ,  B81C1/00 ,  H01L21/52

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US09227839B2

公开(公告)日：2016-01-05

申请号：US14270945

申请日：2014-05-06

Applicant: Raytheon Company

Inventor： Roland W. Gooch ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy ,  Buu Q. Diep

IPC: H01L23/02 ,  B81B7/00 ,  H01L37/00

CPC classification number: B81B7/0067 ,  B81B7/0035 ,  B81B2201/0207 ,  B81C1/00317 ,  G01J5/045 ,  G01J5/08 ,  G01J5/20 ,  H01L37/00

Abstract: A structure for detecting electromagnetic radiation having a predetermined wavelength. The structure includes a device wafer having a sensing element disposed on a predetermined region of a surface of the device wafer responsive to the electromagnetic radiation. A cover wafer is provided having a region thereof transparent to the electromagnetic radiation for passing the electromagnetic radiation through the transparent region onto a surface of the sensing element. A bond gap spacer structure is provided for supporting the surface of the sensing element from an opposing surface of the transparent region of the cover wafer a distance less than a fraction of the predetermined wavelength when the cover wafer is bonded to the device wafer.

Abstract translation: 一种用于检测具有预定波长的电磁辐射的结构。 该结构包括具有传感元件的器件晶片，其响应于电磁辐射而设置在器件晶片的表面的预定区域上。 提供了覆盖晶片，其具有对电磁辐射透明的区域，以将电磁辐射穿过透明区域传递到感测元件的表面上。 提供了一种键间隔结构，用于当覆盖晶片接合到器件晶片时，从盖晶片的透明区域的相对表面支撑感测元件的表面，该距离小于预定波长的一小部分。

公开(公告)号：US20170011977A1

公开(公告)日：2017-01-12

申请号：US15270145

申请日：2016-09-20

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/10 ,  H01L27/146 ,  H01L23/26 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。