公开(公告)号：US20240321562A1

公开(公告)日：2024-09-26

申请号：US18680297

申请日：2024-05-31

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Nobuyuki FUKUI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32935 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: A plasma processing method includes: (a) providing a substrate on a substrate support in a chamber; (b) supplying a coolant to control a temperature of the substrate support; (c) supplying a processing gas into the chamber; and (d) in a state where (b) is being performed, generating plasma from the processing gas in the chamber by a source RF signal, and supplying a bias signal to etch the carbon-containing film. In (d), the coolant of (b) is set such that the substrate or the substrate support reaches a target temperature of −70° C. to 100° C. during plasma etching, the source RF signal in (d) is an RF signal having a power of 2 kW or more, and the bias signal in (d) is a bias RF signal having a power of 2 kW or more or a bias DC signal including a voltage pulse of 2 kV or more.

公开(公告)号：US20230307245A1

公开(公告)日：2023-09-28

申请号：US18125206

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Atsushi TAKAHASHI ,  Takatoshi ORUI

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01L21/3065 ,  H01J2237/334

Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.

公开(公告)号：US20250095991A1

公开(公告)日：2025-03-20

申请号：US18966174

申请日：2024-12-03

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Takayuki KATSUNUMA

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/311

Abstract: Provided is a technique for improving a mask selectivity in etching. An etching method according to the present disclosure includes step (a) preparing a substrate including a silicon-containing film and a mask on the silicon-containing film, the mask including an opening pattern, step (b) forming a metal-containing film on the mask, and step (c) etching the silicon-containing film by generating the plasma from a first processing gas containing a hydrogen fluoride gas.

公开(公告)号：US20240213032A1

公开(公告)日：2024-06-27

申请号：US18395788

申请日：2023-12-26

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Takuya SAWANO

IPC: H01L21/311 ,  C23C16/04 ,  C23C16/08 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/31122 ,  C23C16/045 ,  C23C16/08 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/0332 ,  H01L21/31116 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: An etching method includes (a) providing a substrate having an etching target film and a mask on the etching target film, on a substrate support within a chamber; (b) etching the etching target film to form a recess under a condition that a pressure within the chamber is controlled to a first pressure, and a temperature of the substrate support is controlled to a first temperature; and (c) forming a metal-containing film on a portion of a side wall of the recess by using plasma generated from a processing gas containing a metal-containing gas, under a condition that the pressure within the chamber is controlled to a second pressure higher than the first pressure, and the temperature of the substrate support is controlled to a second temperature equal to or less than the first temperature.

公开(公告)号：US20240030010A1

公开(公告)日：2024-01-25

申请号：US18225801

申请日：2023-07-25

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32816 ,  H01J2237/3342 ,  H01J2237/2001

Abstract: An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.

公开(公告)号：US20220238315A1

公开(公告)日：2022-07-28

申请号：US17583224

申请日：2022-01-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Yusuke WAKO ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

公开(公告)号：US20240355589A1

公开(公告)日：2024-10-24

申请号：US18757575

申请日：2024-06-28

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: An etching method includes: (a) providing a substrate including an organic film and a mask on the organic film, (b) etching the organic film by a first plasma generated from a first processing gas containing an oxygen-containing gas to form a recess in the organic film, and (c) after (b), exposing the recess to a second plasma generated from a second processing gas containing a tungsten-containing gas.

公开(公告)号：US20240203698A1

公开(公告)日：2024-06-20

申请号：US18390221

申请日：2023-12-20

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Satoshi OHUCHIDA ,  Takuto KIKUCHI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that is different from the first material and contains silicon; and (b) etching the second region through the at least one opening by using a plasma generated from a processing gas containing a fluorine containing gas and a CxHyClz (x and y are each an integer of 0 or more, x+y≥1, and z is an integer of 1 or more) gas.

公开(公告)号：US20240006168A1

公开(公告)日：2024-01-04

申请号：US18369219

申请日：2023-09-18

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Yusuke WAKO ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

CPC classification number: H01J37/32724 ,  H01L21/0206 ,  H01L21/31138 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08 ,  H01L21/31144 ,  H01J2237/334

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

公开(公告)号：US20230135998A1

公开(公告)日：2023-05-04

申请号：US17978558

申请日：2022-11-01

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Noboru SAITO ,  Yoshihide KIHARA ,  Maju TOMURA

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.