公开(公告)号：US20240234097A1

公开(公告)日：2024-07-11

申请号：US18398146

申请日：2023-12-28

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKAHASHI

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/3244 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  H01J2237/334

Abstract: An etching method includes (a) adsorbing a silylating agent having a C—F bond to at least a portion of an etching target film including a silicon-containing film; and (b) etching the etching target film.

公开(公告)号：US20240153744A1

公开(公告)日：2024-05-09

申请号：US18386618

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKAHASHI ,  Maju TOMURA ,  Ryo MATSUBARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32816 ,  H01J2237/3341

Abstract: An etching method includes: (a) providing a substrate having an etching target film and a mask on the etching target film to a substrate support in a plasma processing apparatus including a chamber, the substrate support, a plasma generator supplied with source power, and a bias electrode supplied with bias power; and (b) forming a recess by etching the etching target film. In (b), the source power and the bias power are periodically supplied in a cycle that includes a first period and a second period. In the first period, the etching target film is etched, and in the second period, the second processing gas is adsorbed onto the etching target film.

公开(公告)号：US20240112918A1

公开(公告)日：2024-04-04

申请号：US18479986

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Noboru SAITO ,  Yuta NAKANE ,  Atsushi TAKAHASHI ,  Shinya ISHIKAWA ,  Satoshi OHUCHIDA ,  Maju TOMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/32899 ,  H01L21/308 ,  H01L21/31144

Abstract: A plasma processing system includes: first and second processing chambers having respective first and second substrate supports; a transport chamber connected to the first and second processing chambers, and having a transport device; and a controller that executes processing of (a) disposing a substrate including a silicon-containing film having a recess portion and a mask on the silicon-containing film on the first substrate support of the first processing chamber, (b) forming a carbon-containing film on a side wall of the silicon-containing film defining the recess portion in the first processing chamber, (c) transporting the substrate from the first processing chamber to the second processing chamber via the transport chamber and disposing the substrate on the second substrate support, and (d) etching a bottom portion of the recess portion where the carbon-containing film is formed by using a plasma formed from a first processing gas in the second processing chamber.

公开(公告)号：US20230307245A1

公开(公告)日：2023-09-28

申请号：US18125206

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Atsushi TAKAHASHI ,  Takatoshi ORUI

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01L21/3065 ,  H01J2237/334

Abstract: A plasma processing method executed by a plasma processing apparatus having a chamber is provided. The method includes: (a) providing a substrate having a silicon containing film and a mask on the silicon containing film; and (b) etching the silicon containing film, the (b) including (b-1) etching the silicon containing film by using a plasma generated from a first processing gas containing a hydrogen fluoride gas and a tungsten containing gas, and (b-2) etching the silicon containing film by using a plasma generated from a second processing gas containing a hydrogen fluoride gas, the second processing gas not containing a tungsten containing gas, or containing a tungsten containing gas at a flow ratio smaller than a flow ratio of the tungsten containing gas in the first processing gas.

公开(公告)号：US20240112922A1

公开(公告)日：2024-04-04

申请号：US18479599

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Atsushi TAKAHASHI ,  Yuta NAKANE ,  Noboru SAITO

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01J37/32899 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/332 ,  H01J2237/334

Abstract: In one exemplary embodiment, there is provided an etching method. The method includes (a) preparing a substrate, the substrate comprising a silicon-containing film and a mask, the silicon-containing film including a recess, the mask being provided on the silicon-containing film and including an opening that exposes the recess; (b) forming a carbon-containing film on a side wall of the silicon-containing film, the side wall defining the recess; and (c) by using a plasma generated from a processing gas, forming a protective film containing tungsten on the carbon-containing film and etching the silicon-containing film in the recess, the processing gas including a fluorine-containing gas and a tungsten-containing gas.