公开(公告)号：US20220375728A1

公开(公告)日：2022-11-24

申请号：US17747504

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA

IPC: H01J37/32

Abstract: A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas.

公开(公告)号：US20210175049A1

公开(公告)日：2021-06-10

申请号：US17112111

申请日：2020-12-04

Applicant: Tokyo Electron Limited

Inventor： Yasutaka HAMA ,  Ryo MATSUBARA ,  Nobuaki SHINDO

IPC: H01J37/32

Abstract: A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.

公开(公告)号：US20240153744A1

公开(公告)日：2024-05-09

申请号：US18386618

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKAHASHI ,  Maju TOMURA ,  Ryo MATSUBARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32816 ,  H01J2237/3341

Abstract: An etching method includes: (a) providing a substrate having an etching target film and a mask on the etching target film to a substrate support in a plasma processing apparatus including a chamber, the substrate support, a plasma generator supplied with source power, and a bias electrode supplied with bias power; and (b) forming a recess by etching the etching target film. In (b), the source power and the bias power are periodically supplied in a cycle that includes a first period and a second period. In the first period, the etching target film is etched, and in the second period, the second processing gas is adsorbed onto the etching target film.

公开(公告)号：US20240203698A1

公开(公告)日：2024-06-20

申请号：US18390221

申请日：2023-12-20

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Satoshi OHUCHIDA ,  Takuto KIKUCHI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/334

Abstract: Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that is different from the first material and contains silicon; and (b) etching the second region through the at least one opening by using a plasma generated from a processing gas containing a fluorine containing gas and a CxHyClz (x and y are each an integer of 0 or more, x+y≥1, and z is an integer of 1 or more) gas.

公开(公告)号：US20240112922A1

公开(公告)日：2024-04-04

申请号：US18479599

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Ryo MATSUBARA ,  Atsushi TAKAHASHI ,  Yuta NAKANE ,  Noboru SAITO

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/31116 ,  H01J37/32899 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/332 ,  H01J2237/334

Abstract: In one exemplary embodiment, there is provided an etching method. The method includes (a) preparing a substrate, the substrate comprising a silicon-containing film and a mask, the silicon-containing film including a recess, the mask being provided on the silicon-containing film and including an opening that exposes the recess; (b) forming a carbon-containing film on a side wall of the silicon-containing film, the side wall defining the recess; and (c) by using a plasma generated from a processing gas, forming a protective film containing tungsten on the carbon-containing film and etching the silicon-containing film in the recess, the processing gas including a fluorine-containing gas and a tungsten-containing gas.