公开(公告)号：US20170021604A1

公开(公告)日：2017-01-26

申请号：US15285445

申请日：2016-10-04

Applicant: IMEC ,  St. Petersburg Electrotechnical University

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B32B37/15 ,  B05D1/20 ,  B32B27/28

CPC classification number: C08J5/18 ,  B05D1/20 ,  B05D1/204 ,  B05D1/208 ,  B05D2505/50 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B37/15 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08G73/1067 ,  C08J2379/08 ,  C08J2483/02 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H01L23/5329 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20130251978A1

公开(公告)日：2013-09-26

申请号：US13847457

申请日：2013-03-19

Applicant: IMEC ,  ST. PETERSBURG ELECTROTECHNICAL UNIVERSITY

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B32B37/15

CPC classification number: B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US09961767B2

公开(公告)日：2018-05-01

申请号：US14990978

申请日：2016-01-08

Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Kazuhiro Oshima ,  Hiroharu Yanagisawa ,  Kazuhiro Kobayashi ,  Katsuya Fukase ,  Ken Miyairi

IPC: H05K1/18 ,  H05K1/03 ,  H05K3/00 ,  H05K3/46 ,  H05K7/12 ,  H05K7/00 ,  H05K1/02 ,  H05K1/11 ,  H05K3/34

CPC classification number: H05K1/036 ,  H05K1/02 ,  H05K1/0296 ,  H05K1/0298 ,  H05K1/0366 ,  H05K1/111 ,  H05K1/181 ,  H05K3/007 ,  H05K3/3436 ,  H05K3/4682 ,  H05K2201/01 ,  H05K2201/0183 ,  H05K2201/10

Abstract: A circuit board includes an insulating layer including first and second insulator films, a first wiring layer embedded in the first insulator film and including pads and first wiring patterns exposed from the first insulator film, and a second wiring layer including second wiring patterns formed on the second insulator film and via wirings penetrating the insulating layer and electrically connecting the second wiring patterns to the first wiring layer. The first insulator film is made of a reinforcement-free resin that includes no reinforcing member. The second insulator film is made of a reinforcing member impregnated with a resin.

公开(公告)号：US09492841B2

公开(公告)日：2016-11-15

申请号：US13847457

申请日：2013-03-19

Applicant: IMEC ,  St. Petersburg Electrotechnical University

Inventor： Victor Luchinin ,  Svetlana Goloudina ,  Vyacheslav Pasyuta ,  Alexey Ivanov ,  Mikhail Baklanov ,  Mikhail Krishtab

IPC: B05D1/20 ,  B32B37/15 ,  B32B18/00 ,  B32B27/04 ,  B32B27/28 ,  H05K1/03 ,  H01L21/02 ,  H05K3/14 ,  C09D179/08 ,  C08G73/10

CPC classification number: B32B37/15 ,  B05D1/20 ,  B05D1/208 ,  B32B18/00 ,  B32B27/04 ,  B32B27/281 ,  B32B2260/046 ,  B32B2305/026 ,  B32B2305/07 ,  B32B2307/00 ,  B32B2307/204 ,  B32B2379/08 ,  B32B2457/00 ,  C08G73/1067 ,  C09D179/08 ,  H01L21/02285 ,  H01L21/02318 ,  H05K1/03 ,  H05K3/143 ,  H05K2201/01 ,  H05K2201/0104 ,  H05K2201/0116 ,  H05K2201/0154 ,  H05K2201/0162 ,  Y10T428/249979 ,  Y10T428/249991 ,  C08K5/175

Abstract: Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

Abstract translation: 用于孔密封多孔基材的方法，包括：在液体表面上形成聚酰亚胺前体的连续单层，使用Langmuir-Blodgett技术将所述聚酰亚胺前体单层转移到多孔基材上，并将转移的聚酰亚胺前体单层酰亚胺化，从而形成 多孔基材上的聚酰亚胺密封层。 具有至少一个表面的多孔基材，其上设有密封层以密封基材的孔，其中密封层是具有几个单层厚度的聚酰亚胺，并且其中聚酰亚胺不渗透到孔中。

公开(公告)号：US20160234932A1

公开(公告)日：2016-08-11

申请号：US14990978

申请日：2016-01-08

Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Kazuhiro OSHIMA ,  Hiroharu YANAGISAWA ,  Kazuhiro KOBAYASHI ,  Katsuya FUKASE ,  Ken MIYAIRI

IPC: H05K1/02 ,  H05K1/03 ,  H05K1/18 ,  H05K1/11

CPC classification number: H05K1/036 ,  H05K1/02 ,  H05K1/0296 ,  H05K1/0298 ,  H05K1/0366 ,  H05K1/111 ,  H05K1/181 ,  H05K3/007 ,  H05K3/3436 ,  H05K3/4682 ,  H05K2201/01 ,  H05K2201/0183 ,  H05K2201/10

Abstract: A circuit board includes an insulating layer including first and second insulator films, a first wiring layer embedded in the first insulator film and including pads and first wiring patterns exposed from the first insulator film, and a second wiring layer including second wiring patterns formed on the second insulator film and via wirings penetrating the insulating layer and electrically connecting the second wiring patterns to the first wiring layer. The first insulator film is made of a reinforcement-free resin that includes no reinforcing member. The second insulator film is made of a reinforcing member impregnated with a resin.

Abstract translation: 电路板包括绝缘层，包括第一绝缘膜和第二绝缘膜，第一布线层嵌入第一绝缘膜中，并且包括焊盘和从第一绝缘膜露出的第一布线图案，第二布线层包括形成在第一绝缘膜上的第二布线图案 第二绝缘体膜和穿过绝缘层的通孔布线，并将第二布线图案电连接到第一布线层。 第一绝缘膜由无增强树脂制成，不含增强材料。 第二绝缘膜由浸渍有树脂的加强构件制成。