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公开(公告)号：KR100368791B1
公开(公告)日：2003-01-24
申请号：KR1020000005619
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/12
Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).
Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气的流量比来防止量子阱衬底损坏 。 构成：生长具有量子阱结构的衬底（S100）。 通过等离子体化学气相沉积工艺在衬底上沉积电介质覆盖层（S200）。 在预定时间对电介质覆盖层进行热处理（S300）。 介电覆盖层被移除（S400）。 测量荧光光谱（S500）。
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公开(公告)号：KR100361036B1
公开(公告)日：2002-11-18
申请号：KR1020000005618
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: 본 발명은 얇은 반도체 시료가 깨지지 않도록 마운팅(mounting) 기술을 이용하여 반도체 광소자의 전,후 단면에 무반사 코딩을 하도록 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치에 관한 것이다.
따라서, 본 발명은 무반사 코팅시 시료 깨짐을 방지하기 위한 마운팅 기술을 이용하는 시료 홀더 장치에 있어서, 제 1스테인레스(10) 상에는 스페이서(20)와, 고정판(30)과, 제 2스테인레스(40)가 순차적으로 적층되되, 각 홀(50a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 제 1스테인레스(10)까지 도달되도록 홀더결합수단(50)에 의해 체결되고, 각 홀(55a)을 통하여 상기 제 2스테인레스(40)으로부터 상기 고정판(30)까지 도달되도록 시료고정수단(55)에 의해 체결되며, 상기 고정판(30)과 상기 제 1스테인레스(10) 사이에 놓여지는 위치에 스페이서(20)와 수평으로 레이저바(60)가 연장되어 설치되도록 구성되어, 상기 제 2스테인레스(40)의 면적 크기를 상기 제 1스테인레스(10)의 면적 크기 보다 작게 설계함으로서 무반사 코팅시 레이저바(60)에 가해지는 힘의 세기� � 분산시키도록 하는 것을 특징으로 하는 무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치가 제시된다.-
公开(公告)号：KR1020010077675A
公开(公告)日：2001-08-20
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).
Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。
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公开(公告)号：KR100121563B1
公开(公告)日：1997-11-13
申请号：KR1019940011792
申请日：1994-05-28
Applicant: 한국과학기술연구원
IPC: G03F7/00
Abstract: It is an object to provide a method capable of easily correcting each mask patterns when manufacturing a mulilayer mask by converting an electronic microscope into a simply additional device in order to perform an electron beam lithography while maintaining original functions thereof. The method according to the present invention can easily compensate defects of a mask prior to manufacturing the mask by using functions of a microscope. The method performs an electron beam lithography to directly represent a pattern on a sample and manufacture the mask while maintaining original functions of the microscope.
Abstract translation: 本发明的目的是提供一种能够在通过将电子显微镜转换为简单的附加装置来制造多层掩模时容易地校正每个掩模图案的方法，以便在保持其原始功能的同时进行电子束光刻。 根据本发明的方法可以通过使用显微镜的功能，在制造掩模之前容易地补偿掩模的缺陷。 该方法进行电子束光刻以直接表示样品上的图案并制造掩模，同时保持显微镜的原始功能。
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公开(公告)号：KR100368789B1
公开(公告)日：2003-01-24
申请号：KR1020000005561
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: G01B9/00
Abstract: PURPOSE: A method for measuring a sectional reflexibility of a field absorption type device is provided to measure easily an optical variable by using an optical current. CONSTITUTION: A lens type fiber(21) transfers a laser beam emitted from a variable wavelength laser(10). The laser beam passing through the lens type filter(21) is irradiated on a section of a device(15). A chopper(11) turns on or off the variable wavelength laser(10). An optical rotator(14) is formed at a position adjacent to a polarization controller(13) in order to control a path of the laser beam. An optical detector(16) is connected with the optical rotator(14) in order to measure a change of reflective intensity of a reflected beam. A lock-in amplifier(17) is connected with the chopper(11) in order to detect a modulated variable wavelength laser beam. A power supply(18) supplies power to each component. A voltage separator(18) separates a signal influence between the device(15) and the lock-in amplifier(17).
Abstract translation: 目的：提供一种用于测量场吸收型器件的截面反射率的方法，以通过使用光学电流容易地测量光学变量。 构成：透镜型光纤（21）传输从可变波长激光器（10）发射的激光束。 穿过透镜型滤波器（21）的激光束照射在装置（15）的一部分上。 斩光器（11）打开或关闭可变波长激光器（10）。 在与偏振控制器（13）相邻的位置处形成旋光器（14）以控制激光束的路径。 光检测器（16）与旋光器（14）连接以测量反射光束的反射强度的变化。 锁定放大器（17）与斩波器（11）连接以便检测调制的可变波长激光束。 电源（18）为每个组件供电。 电压分离器（18）分离装置（15）和锁定放大器（17）之间的信号影响。
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Patent Agency Ranking
公开(公告)号：KR1020010077666A
公开(公告)日：2001-08-20
申请号：KR1020000005619
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/12
Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).
Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气流量来防止量子阱基板损坏 。 构成：生长具有量子阱结构的衬底（S100）。 电介质覆盖层通过等离子体化学气相沉积工艺沉积在衬底上（S200）。 在规定时间对电介质覆盖层进行热处理（S300）。 去除电介质覆盖层（S400）。 测量荧光光谱（S500）。
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公开(公告)号：KR1020010077665A
公开(公告)日：2001-08-20
申请号：KR1020000005618
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: PURPOSE: A mounting technology of a semiconductor optical device for anti-reflection coating is provided to perform the mounting technology in a stable and identical condition by preventing a sample from damaging in the anti-reflection coating. CONSTITUTION: A spacer(20), a fixing plate(30) and the second stainless(40) is deposited on the first stainless(10) in turns. A holder coupling unit(50) couples from the second stainless(40) to the first stainless(10) via each hole. A sample fixing unit(55) couples from the second stainless(40) to the fixing plate(30) via each hole. A laser bar(60) is extended at a level with the spacer(20) between the fixing plate(30) and the first stainless(10). The area size of the second stainless(40) is less than that of the first stainless(10).
Abstract translation: 目的：提供用于防反射涂层的半导体光学装置的安装技术，以通过防止样品在抗反射涂层中的损坏来以稳定和相同的状态执行安装技术。 构成：间隔件（20），固定板（30）和第二不锈钢（40）轮流沉积在第一不锈钢（10）上。 保持器联接单元（50）经由每个孔从第二不锈钢（40）连接到第一不锈钢（10）。 样品定影单元（55）经由每个孔从第二不锈钢（40）耦合到固定板（30）。 激光棒（60）在固定板（30）和第一不锈钢（10）之间的间隔件（20）的水平面上延伸。 第二不锈钢（40）的面积小于第一不锈钢（10）的面积。
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公开(公告)号：KR1020010077635A
公开(公告)日：2001-08-20
申请号：KR1020000005561
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: G01B9/00
Abstract: PURPOSE: A method for measuring a sectional reflexibility of a field absorption type device is provided to measure easily an optical variable by using an optical current. CONSTITUTION: A lens type fiber(21) transfers a laser beam emitted from a variable wavelength laser(10). The laser beam passing through the lens type filter(21) is irradiated on a section of a device(15). A chopper(11) turns on or off the variable wavelength laser(10). An optical rotator(14) is formed at a position adjacent to a polarization controller(13) in order to control a path of the laser beam. An optical detector(16) is connected with the optical rotator(14) in order to measure a change of reflective intensity of a reflected beam. A lock-in amplifier(17) is connected with the chopper(11) in order to detect a modulated variable wavelength laser beam. A power supply(18) supplies power to each component. A voltage separator(18) separates a signal influence between the device(15) and the lock-in amplifier(17).
Abstract translation: 目的：提供一种用于测量场吸收型装置的截面反射性的方法，以便通过使用光电流容易地测量光学变量。 构成：透镜型光纤（21）传送从可变波长激光器（10）发射的激光束。 穿过透镜型过滤器（21）的激光束照射在装置（15）的一部分上。 斩光器（11）打开或关闭可变波长激光器（10）。 在与偏振控制器（13）相邻的位置处形成光旋转器（14），以控制激光束的路径。 光学检测器（16）与光学旋转器（14）连接，以便测量反射光束的反射强度的变化。 锁定放大器（17）与斩波器（11）连接，以便检测调制的可变波长激光束。 电源（18）为每个组件供电。 电压分离器（18）分离装置（15）和锁定放大器（17）之间的信号影响。
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公开(公告)号：KR100361035B1
公开(公告)日：2002-11-18
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: 본 발명은 스스로 뭉쳐서 형성된 양자점에서 나오는 광의 스펙트럼이 매우 넓은 것을 이용하여 반도체 광 증폭기의 이득 대역폭을 확장하는 방법에 관한 것이다.
더 상세하게는 InGaAs/InGaAsP/InP 양자우물 반도체 광증폭기의 이득 대역폭 확장방법에 있어서, 소정 두께의 InP 버퍼층을 성장시키는 과정과, 상기 InP 버퍼층 성장후 소정 가스를 공급하는 제1 가스 공급 과정과, 상기 InP 버퍼층 위로 InAs 단일 우물 구조층을 성장시키는 과정과, 상기 InAs 층 성장 후 소정 가스를 공급하여 격자 상수가 맞지 않는 상기 InAs 층이 서로 뭉쳐서 양자점을 형성하도록 하는 제2 가스 공급 과정과, 상기 InAs 층 위로 소정 두께의 InP 캡층을 성장시키는 과정으로 양자점을 생성하여 반도체 광 증폭기의 이득영역으로 양자점을 도입하고, 상기 InAs가 서로 뭉치면서 각 점들의 크기와 높이가 불균일하게 서로 독립적인 점을 형성하게 함을 특징으로 한다.-
10.发明公开
公开(公告)号：KR1020010036949A
公开(公告)日：2001-05-07
申请号：KR1019990044158
申请日：1999-10-12
Applicant: 한국과학기술연구원
IPC: H01L21/18
Abstract: PURPOSE: A method for locally forming a different band gap in a quantum well by a dielectric-semiconductor composite cover layer is provided to regulate a degree of disorder of the quantum well. CONSTITUTION: The method begins with growing an InGaAs/InGaAsP quantum well substrate by a chemical beam epitaxy technique. Next, a dielectric thin layer made of such as SiO2 or SiNx is formed as a cover layer on the quantum well substrate by a plasma-enhanced chemical deposition technique. After a heat treatment step is carried out at a temperature of 600 - 800°C for 4 - 16 minutes, the dielectric thin layer is removed. In addition, InP, InGaAs or InGaAsP is used as a semiconductor cover layer.
Abstract translation: 目的：提供通过介电半导体复合覆盖层在量子阱中局部形成不同带隙的方法，以调节量子阱的无序程度。 构成：该方法开始于通过化学束外延技术生长InGaAs / InGaAsP量子阱衬底。 接下来，通过等离子体增强化学沉积技术在量子阱基板上形成由SiO 2或SiN x构成的电介质薄层作为覆盖层。 在600-800℃的温度下进行4-16分钟的热处理步骤后，去除电介质薄层。 此外，使用InP，InGaAs或InGaAsP作为半导体覆盖层。
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