公开(公告)号：US20240030037A1

公开(公告)日：2024-01-25

申请号：US18023158

申请日：2021-08-23

Applicant: ADEKA CORPORATION

Inventor： Yutaro AOKI ,  Masayuki KIMURA ,  Atsushi YAMASHITA

IPC: H01L21/311

CPC classification number: H01L21/31122

Abstract: Provided is a method of etching a metal oxide film in a laminate including a substrate and the metal oxide film formed on a surface thereof by an atomic layer etching method, the method including: a first step of introducing, into a treatment atmosphere storing the laminate, at least one oxidizable compound selected from the group consisting of: an alcohol compound; an aldehyde compound; and an ester compound; and a second step of introducing an oxidizing gas into the treatment atmosphere after the first step.

公开(公告)号：US20220017554A1

公开(公告)日：2022-01-20

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20190185994A1

公开(公告)日：2019-06-20

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F15/04 ,  C07F13/00 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07C251/08 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C23C16/45553

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：US20240301553A1

公开(公告)日：2024-09-12

申请号：US18571903

申请日：2022-06-17

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C23C16/455 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/18

Abstract: Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1):




where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and “n” represents a valence of the rare earth metal atom.

公开(公告)号：US20240167155A1

公开(公告)日：2024-05-23

申请号：US18282130

申请日：2022-03-09

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi YAMASHITA ,  Yoshiki OOE

IPC: C23C16/455 ,  C07F7/22 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/45553 ,  C07F7/2284 ,  C23C16/407 ,  C23C16/4485

Abstract: Provided is a tin compound, which is represented by the following general formula (1):






in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US20220364226A1

公开(公告)日：2022-11-17

申请号：US17765658

申请日：2020-09-24

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C23C16/40

Abstract: The present invention provides a method for producing an yttrium oxide-containing film by an atomic layer deposition method, including: a step (A) of introducing a raw material gas obtained by vaporizing a thin film-forming raw material containing tris(sec-butylcyclopentadienyl)yttrium into a processing atmosphere to deposit the tris(sec-butylcyclopentadienyl)yttrium on a substrate; and a step (B) of reacting the tris(sec-butylcyclopentadienyl)yttrium deposited on the substrate with a reactive gas containing a gas selected from the group consisting of oxygen plasma, ozone, ozone plasma, and mixtures thereof in the processing atmosphere to oxidize yttrium.

公开(公告)号：US20240337014A1

公开(公告)日：2024-10-10

申请号：US18575963

申请日：2022-06-28

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Keisuke TAKEDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07F15/065 ,  C23C16/4485 ,  C23C16/45553

Abstract: Provided is a cobalt compound represented by the following general formula (1):




where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);




where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

公开(公告)号：US20230151041A1

公开(公告)日：2023-05-18

申请号：US17917671

申请日：2021-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C01B33/027 ,  C07F7/22 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F15/065 ,  C01B33/027 ,  C07F7/2284 ,  C23C16/18 ,  C23C16/407 ,  C23C16/45553

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:




where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

公开(公告)号：US20220024953A1

公开(公告)日：2022-01-27

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US20200083520A1

公开(公告)日：2020-03-12

申请号：US16494838

申请日：2018-02-13

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: H01M4/04

Abstract: A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.