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公开(公告)号:JP2014158035A
公开(公告)日:2014-08-28
申请号:JP2014061971
申请日:2014-03-25
Applicant: Brewer Science Inc , ブルーワー サイエンス アイ エヌ シー.
Inventor: PULIGADDA RAMA , ZHONG XING-FU , FRAME TONY D , JEREMY MCCUTCHAN
IPC: H01L21/02
CPC classification number: H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a multilayer bonding layer system for temporarily bonding a semiconductor substrate.SOLUTION: In this bonding system, at least one layer is directly contacted with a semiconductor substrate, and at least two layers of this system are directly contacted with each other. Some processing options are provided for execution of a specific function by a different layer in a multilayer structure. The further importance is that performance of a thin-wafer handling solution can be improved by providing improvement in thermal stability, improvement in adaptability with a severe back face processing step, impact protection of a wafer front face by encapsulation, stress alleviation at a peeling step, and reduction in defects in the front face.
Abstract translation: 要解决的问题:提供一种用于临时接合半导体衬底的多层接合层系统。解决方案:在该接合系统中,至少一层与半导体衬底直接接触,并且该系统的至少两层与 彼此。 提供了一些处理选项,用于通过多层结构中的不同层执行特定功能。 更重要的是,可以通过提供热稳定性的改善来提高薄晶片处理方案的性能,通过严格的背面处理步骤提高适应性,通过封装对晶片正面的冲击保护,在剥离步骤的应力缓解 ,并减少前面的缺陷。
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公开(公告)号:SG175217A1
公开(公告)日:2011-11-28
申请号:SG2011074903
申请日:2010-03-19
Applicant: BREWER SCIENCE INC
Inventor: TRICHUR RAMACHANDRAN K , TANG TINGJI , XU GU , ZHONG XING-FU , HONG WENBIN , FLAIM TONY D , YESS KIMBERLY
Abstract: New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
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公开(公告)号:SG10201506168WA
公开(公告)日:2015-09-29
申请号:SG10201506168W
申请日:2011-08-05
Applicant: BREWER SCIENCE INC
Inventor: PULIGADDA RAMA , ZHONG XING-FU , FLAIM TONY D , MCCUTCHEON JEREMY
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公开(公告)号:SG2014012512A
公开(公告)日:2014-06-27
申请号:SG2014012512
申请日:2010-03-19
Applicant: BREWER SCIENCE INC
Inventor: TANG TINGJI , XU GU , ZHONG XING-FU , HONG WENBIN , FLAIM TONY D , YESS KIMBERLY , TRICHUR RAMACHANDRAN K
Abstract: New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
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公开(公告)号:AT541240T
公开(公告)日:2012-01-15
申请号:AT08730646
申请日:2008-02-25
Applicant: BREWER SCIENCE INC
Inventor: ZHONG XING-FU , FLAIM TONY , MALHOTRA JYOTI
IPC: G03F7/004
Abstract: New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
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公开(公告)号:SG10201912718SA
公开(公告)日:2020-02-27
申请号:SG10201912718S
申请日:2016-06-21
Applicant: BREWER SCIENCE INC
Inventor: ZHONG XING-FU , HUANG RUNHUI , ZHANG BOYU
Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.
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公开(公告)号:SG11201700478YA
公开(公告)日:2017-02-27
申请号:SG11201700478Y
申请日:2015-07-22
Applicant: BREWER SCIENCE INC
Inventor: LIU XIAO , BAI DONGSHUN , FLAIM TONY D , ZHONG XING-FU , WU QI
IPC: H01L21/58
Abstract: The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.
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公开(公告)号:SG10201509693YA
公开(公告)日:2015-12-30
申请号:SG10201509693Y
申请日:2011-08-05
Applicant: BREWER SCIENCE INC
Inventor: PULIGADDA RAMA , ZHONG XING-FU , FLAIM TONY D , MCCUTCHEON JEREMY
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公开(公告)号:SG2014014922A
公开(公告)日:2014-07-30
申请号:SG2014014922
申请日:2011-08-05
Applicant: BREWER SCIENCE INC
Inventor: PULIGADDA RAMA , ZHONG XING-FU , FLAIM TONY D , MCCUTCHEON JEREMY
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公开(公告)号:SG187739A1
公开(公告)日:2013-03-28
申请号:SG2013009121
申请日:2011-08-05
Applicant: BREWER SCIENCE INC
Inventor: PULIGADDA RAMA , ZHONG XING-FU , FLAIM TONY D , MCCUTCHEON JEREMY
Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
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