中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.027 seconds)

    1.
    发明专利
    失效

    公开(公告)号：JPH05252006A

    公开(公告)日：1993-09-28

    申请号：JP19823192

    申请日：1992-07-24

    Applicant: CONS RIC MICROELETTRONICA ,  ST MICROELECTRONICS SRL

    Inventor： ZISA MICHELE ,  BELLUSO MASSIMILIANO ,  PAPARO MARIO

    IPC: H03F3/217 ,  H03K4/58 ,  H03K5/02 ,  H03K17/06 ,  H03K17/687 ,  H03K19/017

    Abstract: PURPOSE: To actualize the bootstrap circuit which drives a power MOS transistor(TR) with high-potential side constitution wherein the power MOS TR is able to operate with a low-level supply voltage when operating at a high switching frequency. CONSTITUTION: The bootstrap circuit for the power MOS TR of the high- potential side driving constitution includes a 1st capacitor C1 which can be charged to a 1st voltage level of the supply voltage of the power TR T1. A 2nd capacitor C2 is provided in combination with the 1st capacitor C1 so that a 1st voltage and a 2nd voltage higher than the threshold voltage of the power TR T1 can be used.

    3.
    发明专利
    未知

    公开(公告)号：DE68921004T2

    公开(公告)日：1995-09-21

    申请号：DE68921004

    申请日：1989-11-17

    Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

    Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    5.
    发明专利
    未知

    公开(公告)号：DE68921004D1

    公开(公告)日：1995-03-16

    申请号：DE68921004

    申请日：1989-11-17

    Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

    Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

    IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

    Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

    8.
    发明专利
    未知

    公开(公告)号：IT1251097B

    公开(公告)日：1995-05-04

    申请号：ITMI912045

    申请日：1991-07-24

    Applicant: ST MICROELECTRONICS SRL

    Inventor： ZISA MICHELE ,  BELLUSO MASSIMILIANO ,  PAPARO MARIO

    IPC: H03K4/58 ,  H03F3/217 ,  H03K5/02 ,  H03K17/06 ,  H03K17/687 ,  H03K19/017 ,  H03K

    Abstract: In a bootstrap circuit for a power MOS transistor in the high driver configuration, comprising a first capacitor (C1) chargeable to a first voltage function of the supply voltage of the power transistor (T1), there is present a second capacitor (C2) combined with the first capacitor (C1) in such a way as to make available a second voltage higher than the first voltage and the threshold voltage of the power transistor (T1).

Patent Agency Ranking