公开(公告)号：EP1540276A4

公开(公告)日：2006-08-23

申请号：EP03793095

申请日：2003-08-15

Applicant: HYPERNEX INC ,  IBM

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20 ,  G01N23/223

CPC classification number: G01N23/20 ,  G01B15/02

Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

公开(公告)号：WO2004018959A3

公开(公告)日：2004-10-07

申请号：PCT/US0325769

申请日：2003-08-15

Applicant: HYPERNEX INC ,  IBM

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20 ,  G01N23/223

CPC classification number: G01N23/20 ,  G01B15/02

Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

Abstract translation: 一种用于映射一个或多个纹理化多晶薄膜的膜厚度的装置和方法。 提供了已知厚度的多个样品膜。 每个样品膜在测量点用X射线照射以产生捕获多个衍射弧的衍射图像。 基于在衍射图像上收集的不完整极点图来计算样品膜的纹理信息（即极密度）并且用于校正来自该样品的x射线衍射强度。 校正的衍射强度对每个样品膜进行积分，然后用于构建使衍射强度与样品膜的相应已知膜厚相关的校准曲线。 因此，使用针对这种未知厚度的薄膜获得的校正和积分衍射强度，可以将具有未知厚度的纹理化多晶薄膜的膜厚度映射到这种校准曲线上。

公开(公告)号：AU2003265462A8

公开(公告)日：2004-03-11

申请号：AU2003265462

申请日：2003-08-15

Applicant: IBM ,  HYPERNEX INC

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20

公开(公告)号：AU2003265462A1

公开(公告)日：2004-03-11

申请号：AU2003265462

申请日：2003-08-15

Applicant: HYPERNEX INC

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20

公开(公告)号：EP1908105A4

公开(公告)日：2012-08-22

申请号：EP06749575

申请日：2006-04-07

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  GORDON MICHAEL S ,  RODBELL KENNETH P

IPC: H01L23/556 ,  H01L23/485

CPC classification number: H01L23/556 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05006 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP2100241A4

公开(公告)日：2011-01-12

申请号：EP07865741

申请日：2007-12-17

Applicant: IBM

Inventor： FIORENZA GIOVANNI ,  MURRAY CONAL E ,  RODBELL KENNETH P ,  TANG HENRY

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

公开(公告)号：JPH10308363A

公开(公告)日：1998-11-17

申请号：JP11252698

申请日：1998-04-22

Applicant: IBM ,  TOSHIBA CORP

Inventor： USUI TAKAMASA ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  FILIPPI RONALD G ,  YANG CHI-HUA ,  KATADA TOMIO ,  AOCHI HIDEAKI

IPC: C23C14/14 ,  C23C14/34 ,  C23C16/06 ,  C23C28/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a manufacture of a metalization structure having a superior electrical mobility, highly textured, and suitable for electrical connection or wiring. SOLUTION: The manufacture of a metalization structure comprises depositing a first lower layer 13 made of IVA family metal such as titan and having a thickness of approximately 90 Å to 110 Å on a substrate and after which, electrical depositing a layer made of at least one element selected from a group consisting of aluminum and aluminum alloy deposited on the layer 13 in such a way as to be in ohmic contact with the layer 13.

公开(公告)号：EP1800335A4

公开(公告)日：2008-01-02

申请号：EP05797431

申请日：2005-09-20

Applicant: IBM

Inventor： PETRARCA KEVIN S ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL ,  RODBELL KENNETH P

IPC: H01L21/31 ,  H01L21/44 ,  H01L21/469 ,  H01L21/4763

CPC classification number: H01L21/76873 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

Abstract: Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer (440). The impure copper seed layer (440) covers a barrier layer (230), which covers an insulating layer (115) that has an opening. Electroplated copper fills the opening in the insulating layer (115). Through a chemical mechanical polish, the barrier layer (230), the impure copper seed layer (440) derived from an electroplated copper bath, and the electroplated copper are planarized to the insulating layer (115).

公开(公告)号：EP1299210A4

公开(公告)日：2004-11-17

申请号：EP01952272

申请日：2001-06-27

Applicant: IBM ,  FREUDENBERG NON WOVENS

Inventor： CHEN SHYNG-TSONG ,  CHUNG ALEX SIU KEUNG ,  DAVIS KENNETH M ,  HSU OSCAR KAI CHI ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00 ,  B23C3/28 ,  B24B37/04 ,  B24D18/00 ,  B26D7/01

CPC classification number: B24B37/26 ,  Y10T409/303808 ,  Y10T409/306608 ,  Y10T409/308624

Abstract: Grooves (70, 76, 78, & 80-82) are formed in a CMP pad (12) by positioning the pad (12) on a supporting surface (10) with a working surface (22) of the pad (12) in spaced relation opposite to a router bit (24) and at least one projecting stop member (33) adjacent to the router bit (24), an outer end portion of the bit (24) projecting beyond the stop (33). When the bit (24) is rotated, relative axial movement between the bit (24) and the pad (12) causes the outer end portion of the bit (24) to cut an initial recess in the pad (12). Relative lateral movement between the rotating bit (24) and the pad (12) then forms a groove (70) which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove (70) are limited by applying a vacuum to the working surface (22) of the pad (12) to keep it in contact with the stop member(s) (33). Different lateral movements between the bit (24) and the pad (12) are used to form a variety of groove patterns (76, 78, & 80-82), the depths of which are precisely controlled by the stop member(s) (33).

公开(公告)号：EP1341643A4

公开(公告)日：2004-06-09

申请号：EP01274075

申请日：2001-11-20

Applicant: IBM ,  FREUDENBERG NONWOVENS L P

Inventor： CHEN SHYNG-TSONG ,  RODBELL KENNETH P ,  HSU OSCAR KAI CHI ,  VANGSNESS JEAN ,  GILBRIDE DAVID S ,  BILLINGS SCOTT CLAYTON ,  DAVIS KENNETH

IPC: B24B37/24 ,  B24D3/28 ,  B24D11/00 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B37/04

CPC classification number: B24B37/24 ,  B24D3/28 ,  B24D11/008

Abstract: A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers. The fibers may be separate, or in the form of a woven or non-woven web.