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公开(公告)号：DE3851647T2
公开(公告)日：1995-04-06
申请号：DE3851647
申请日：1988-02-19
Applicant: IBM
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公开(公告)号：ES2062972T3
公开(公告)日：1995-01-01
申请号：ES87103375
申请日：1987-03-10
Applicant: IBM
Inventor： ANDERSON HERBERT RUDOLF JR , DIVAKARUNI RENUKA SHASTRI , DYNYS JOSEPH MICHAEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , MASTER RAJ NAVINCHANDRA , CASEY JON ALFRED
Abstract: The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.
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公开(公告)号：MY139408A
公开(公告)日：2009-09-30
申请号：MYPI0501939
申请日：1995-12-01
Applicant: IBM , CARBORUNDUM CO
Inventor： CASEY JON ALFRED , SHINDE SUBHASH LAXMAN , VALLABHANENI RAO VENKATESWARA , YOUNGMAN ROBERT A , HERRON LESTER WYNN , CORDERO CARLA NATALIA , FASANO BENJAMIN VITO , GOLAND DAVID BRIAN , HANNON ROBERT , HARRIS JONATHAN H , JOHNSON GREGORY MARVIN , PATEL NIRANJAN MOHANLAL , REITTER ANDREW MICHAEL
IPC: B22F3/00 , B22F7/02 , B32B18/00 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46
Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED METALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE BODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT CONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT CONTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM NITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM AND 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE.
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公开(公告)号：DE3750684D1
公开(公告)日：1994-12-01
申请号：DE3750684
申请日：1987-03-10
Applicant: IBM
Inventor： ANDERSON HERBERT , DIVAKARUNI RENUKA SHASTRI , DYNYS JOSEPH MICHAEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , MASTER RAJ NAVINCHANDRA , CASEY JON ALFRED
Abstract: The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.
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公开(公告)号：MY134821A
公开(公告)日：2007-12-31
申请号：MYPI9503713
申请日：1995-12-01
Applicant: IBM , CARBORUNDUM CO
Inventor： CASEY JON ALFRED , REITTER ANDREW MICHAEL , SHINDE SUBHASH LAXMAN , VALLABHANENI RAO VENKATESWARA , YOUNGMAN ROBERT A , CORDERO CARLA NATALIA , FASANO BENJAMIN VITO , GOLAND DAVID BRIAN , HANNON ROBERT , HARRIS JONATHAN H , HERRON LESTER WYNN , JOHNSON GREGORY MARVIN , PATEL NIRANJAN MOHANLAL
IPC: B22F3/00 , B22F7/02 , B32B18/00 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46
Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED ETALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE ODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT ONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT NTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM ITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE. (FIG. 1)
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Patent Agency Ranking
公开(公告)号：BR8701784A
公开(公告)日：1988-02-09
申请号：BR8701784
申请日：1987-04-14
Applicant: IBM
Inventor： ANDERSON HERBERT RUDOLPH , DIVAKARUNI RENUKA SHASTRI , DYNYS JOSEPH MICHAEL , KANDEZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , MASTER RAJ N , CASEY JON ALFRED
Abstract: The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.
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公开(公告)号：DE68923717T2
公开(公告)日：1996-04-18
申请号：DE68923717
申请日：1989-02-28
Applicant: IBM
Inventor： BAISE ARNOLD IVAN , CASEY JON ALFRED , CLARKE DAVID RICHARD , DIVAKARUNI RENUKA SHASTRI , DUNKEL WERNER ERNEST , HUMENIK JAMES NOEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , KNICKERBOCKER JOHN ULRICH , MATTS AMY TRESTMAN , TAKACS MARK ANTHONY , WIGGINS LOVELL BERRY
IPC: H05K1/03 , C04B41/48 , C04B41/49 , H01L21/48 , H01L23/08 , H01L23/538 , H05K3/40 , H01L23/15 , H01L23/52
Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
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公开(公告)号：DE68923717D1
公开(公告)日：1995-09-14
申请号：DE68923717
申请日：1989-02-28
Applicant: IBM
Inventor： BAISE ARNOLD IVAN , CASEY JON ALFRED , CLARKE DAVID RICHARD , DIVAKARUNI RENUKA SHASTRI , DUNKEL WERNER ERNEST , HUMENIK JAMES NOEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , KNICKERBOCKER JOHN ULRICH , MATTS AMY TRESTMAN , TAKACS MARK ANTHONY , WIGGINS LOVELL BERRY
IPC: H05K1/03 , C04B41/48 , C04B41/49 , H01L21/48 , H01L23/08 , H01L23/538 , H05K3/40 , H01L23/15 , H01L23/52
Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
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公开(公告)号：DE3750684T2
公开(公告)日：1995-05-18
申请号：DE3750684
申请日：1987-03-10
Applicant: IBM
Inventor： ANDERSON HERBERT , DIVAKARUNI RENUKA SHASTRI , DYNYS JOSEPH MICHAEL , KANDETZKE STEVEN MICHAEL , KIRBY DANIEL PATRICK , MASTER RAJ NAVINCHANDRA , CASEY JON ALFRED
Abstract: The present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.
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公开(公告)号：DE3851647D1
公开(公告)日：1994-11-03
申请号：DE3851647
申请日：1988-02-19
Applicant: IBM
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